66 4203
Abstract: No abstract text available
Text: PKL 4119A PI/PKL 4119 PI Advanced Specification 50-60A DC/DC Power Modules 48V Input, 2.5V Output • • • • • • • • • High efficiency 88% Typ 50A at full load High power density, 51.7 W/in3, (2.5V @ 60A) Fast dynamic response, 200µs, +- 200 mVpeak Typ
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0-60A
6-75V)
500Vdc
66 4203
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4118A
Abstract: PKL4118B ericsson BMR 610 45
Text: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other SEC/D Kevin Chen Approved 1 (1) (3) No. Checked 1/1301-BMR632 00152-EN/LZT146311 Uen Technical Specification Date PKL 4000 PI series 2007-1-11
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1/1301-BMR632
00152-EN/LZT146311
1000h
MIL-STD-202G
4118A
PKL4118B
ericsson BMR 610 45
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Untitled
Abstract: No abstract text available
Text: PKL 4000 Series DC/DC converter Input 36-75 Vdc Output up to 80 A/300 W Key Features • "THE double P" extended Half-brick 61.5x61x12.7 mm 2.42x2.4x0.5 in • Low Output Ripple, 60 mVp-p Typ. • Parallelable with no external components • High efficiency, typ. 88 % at 1.8 Vout
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5x61x12
SE-141
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Untitled
Abstract: No abstract text available
Text: KEMET Part Number: C0603C224M3RACTU C0603C224M3RAC7867 Capacitor, ceramic, 0.22 uF, +/-20% Tol, 25V, X7R, 0603 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications
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C0603C224M3RACTU
C0603C224M3RAC7867)
4119a5d2-e902-489e-9bf4-6ba61946ae59
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amelco
Abstract: No abstract text available
Text: 2N and SST 4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET FEATURES LOW POWER IDSS<600 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117 A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) -40V
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2N4117)
2N4117
300mW
OT-23
2N4118
2N4117/A
2N4119
UNITS100
25-year-old,
amelco
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bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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Untitled
Abstract: No abstract text available
Text: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other SEC/D Kevin Chen Approved 1 (1) (3) No. Checked 1/1301-BMR632 00152-EN/LZT146311 Uen Technical Specification Date PKL 4000 PI series 2007-1-11
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1/1301-BMR632
00152-EN/LZT146311
1000h
MIL-STD-202G
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Untitled
Abstract: No abstract text available
Text: PKL 4313 PIT/PKL 4213 PIT Advanced Specification 300 Watt DC/DC Power Module 48V Input, 12V Output • • • • • • • • • • High efficiency 92% Typ 25A at full load High power density, 103 W/in3, (12V @ 25A) Fast dynamic response, 200µs,
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6-75V)
500Vdc
1950/ULc
1-877-ERICMIC
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macrodens
Abstract: PKA 2231 PI 4128B PKV 5321 PKA 4411 PKA 4211 PI PKF 4910 PKF 4713 PI macrodens PKF 4211 PKA 2212 P
Text: Power Modules Product Selector Ericsson is shaping the future of Mobile and Broadband Internet communications through its continuous technology leadership. Providing innovative solutions in more than 140 countries, Ericsson is helping to create the most powerful
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SE-141
macrodens
PKA 2231 PI
4128B
PKV 5321
PKA 4411
PKA 4211 PI
PKF 4910
PKF 4713 PI
macrodens PKF 4211
PKA 2212 P
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Untitled
Abstract: No abstract text available
Text: PKL 4000 Series DC/DC converter Input 36-75 Vdc Output up to 80 A/300 W Key Features • "THE double P" extended Half-brick 61.5x61x12.7 mm 2.42x2.4x0.5 in • Low Output Ripple, 60 mVp-p Typ. • Parallelable with no external components • High efficiency, typ. 88 % at 1.8 Vout
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5x61x12
SE-141
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macrodens
Abstract: ERICSSON 2111 PKC 2131 PI PKB 4111 SI pkn 4520* ericsson 4918B lm 3055 PKF 2611 PI PKC 2132 PI 4518A
Text: Power Modules Product Selector Ericsson is shaping the future of Mobile and Broadband Internet communications through its continuous technology leadership. Providing innovative solutions in more than 140 countries, Ericsson is helping to create the most powerful
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SE-126
4118GC
4918LC
macrodens
ERICSSON 2111
PKC 2131 PI
PKB 4111 SI
pkn 4520* ericsson
4918B
lm 3055
PKF 2611 PI
PKC 2132 PI
4518A
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amelco
Abstract: No abstract text available
Text: 2N and SST 4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET FEATURES LOW POWER IDSS<600 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117 A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) -40V
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2N4117)
2N4117
300mW
OT-23
2N4118
2N4117/A
2N4119
UNI100
25-year-old,
amelco
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Untitled
Abstract: No abstract text available
Text: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other SEC/D Kevin Chen Approved 1 (1) (3) No. Checked 1/1301-BMR632 00152-EN/LZT146311 Uen Technical Specification Date PKL 4000 PI series 2006-12-4
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1/1301-BMR632
00152-EN/LZT146311
1000h
MIL-STD-202G
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4119a
Abstract: No abstract text available
Text: Ericsson Internal Limited Internal PRODUCT SPECIFICATION TABLE OF CONTENTS E Prepared Prepared also (also subject subject responsible responsible ifif other other) MPM/BY/P MPM/BY/P Lars Lars Rabenius Rabenius Approved Approved PKLRabenius 4000 PI series
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1/1301-BMR632
52-EN/LZT
1000h
MIL-STD-202G
4119a
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2N4119
Abstract: 2n4117 2N4118 2N4117A 50117 2n4119a 2n4117 jfet 2N4118A
Text: 2N4117-19, 2N4117A-19A N-Channel JFET FEATURES • Low Leakage — I g g s ^ ^ • Low Capacitance PIN CONFIGURATION CrsS< 1 . 5 p F TO-72 ABSOLUTE MAXIMUM RATINGS @ 2 5 ° C unless otherwise noted M axim um Temperatures Storage Tem perature - 6 5 ° C to + 2 0 0 ° C
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2N4117-19,
2N4117A-19A
2N4117/W
2N4117/D
2N4117A/W
2N4117A/D
2N4I18
2N4118/W
2N41nt
2N4119
2n4117
2N4118
2N4117A
50117
2n4119a
2n4117 jfet
2N4118A
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS 8514019 SPRAGU E. INC *Î3 J> WÊ 05Q433Ô S E M IC O N D S / IC S O O O S b l M 3 • AL6R 93D 03614 J> 7=z.?-zSMETAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Î A = 25°C
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05Q433Ã
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Untitled
Abstract: No abstract text available
Text: N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION r". Top Contact: > A Aluminum 12,000 017" 0 432mm Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS 017" (0 432mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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432mm)
0254mm)
2N4771
2N4119,
2N4119A-2N
-10nA
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2N4119
Abstract: 4117
Text: *2 N 4117,A * 2 N 4118, A * 2 N 4119, A F I E L D - E F F E C T T R A N S IS T O R , S IL IC O N , N C H A N N E L TR A N S IS TO R A E F F E T D E C H A M P , S IL IC IU M , C A N A L N % Preferred device D ispotitif recommandé Very high impedance input stages.
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2N4119
Abstract: 2n4117a SMP4117 4119a 4118A
Text: B9 9-97 2N 4 1 1 7 , 2 N 4 1 1 7 A , 2N 4118, 2 N 4 1 1 8 A , 2 N 4 1 1 9 , 2 N 4 1 1 9 A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR ^ • AUDIO AMPLIFIERS Absolute maximum ratings at TA = 25°C • ULTRA-HIGH INPUT IMPEDANCE AMPLIFIERS Reverse Gate Source & Reverse Gate Drain Voltage
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2N4117
2N4117A
2N4118
2N4119
2N4117A,
2N4118A,
2N4119A
SMP4117
4119a
4118A
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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2n4117 equivalent
Abstract: 2N4117 2n4117a equivalent 2N4771 2N4119A equivalent 2n4119 2n4117a 2N3452 equivalent 2n4118 2n5902-2n5909
Text: l?[^@[D LD ir ©AITAtL ' IM-CHAIMIMEL J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum r * 12,000 017" . (0 432mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS 017" (0 432mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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0254mm)
2N4117A-2N4119A
2N4117-2N4119
2N4771
2N4119,
2N4119A-2N4119A
2N4117
2N4119A-2N4119A
2n4117 equivalent
2n4117a equivalent
2N4119A equivalent
2n4119
2n4117a
2N3452 equivalent
2n4118
2n5902-2n5909
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2n4117a
Abstract: No abstract text available
Text: B9 9-9 7 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 4119A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • ULTRA-HIGH INPUT IMPEDANCE AMPLIFIERS Absolute maximum ratings at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage
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2N4117,
2N4117A,
2N4118,
2N4118A,
2N4119,
2N4119A
2N4117
2N4117A
2N4118
2N4118A
2n4117a
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