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    2N 65 MOSFET Search Results

    2N 65 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N 65 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NMOS2

    Abstract: transistor marking code N1G NMOS-2 2N AND 2P-CHANNEL ENHANCEMENT DEVICE MARKING p1g AF9902M Anachip f 1 p2s P1D mosfet LCD Monitor Inverter
    Text: AF9902M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer


    Original     		PDF AF9902M 9902M NMOS2 transistor marking code N1G NMOS-2 2N AND 2P-CHANNEL ENHANCEMENT DEVICE MARKING p1g AF9902M Anachip f 1 p2s P1D mosfet LCD Monitor Inverter

    2N AND 2P-CHANNEL ENHANCEMENT

    Abstract: LCD Monitor Inverter marking p2s PMOS-2 NMOS-2 DEVICE MARKING p1g code n1d marking code p1S 2 CHANNEL N-CHANNEL MOSFET marking code P1D
    Text: AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer


    Original     		PDF AF9903M 2N AND 2P-CHANNEL ENHANCEMENT LCD Monitor Inverter marking p2s PMOS-2 NMOS-2 DEVICE MARKING p1g code n1d marking code p1S 2 CHANNEL N-CHANNEL MOSFET marking code P1D

    SIEMENS 800

    Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80


    Original     		PDF O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n

    VN1210N5

    Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10


    Original     		PDF RRF120 RRF520 UFN132 IRrj120 RRF522 SFN02802 SFN02812 SFN106A3 YTF520 IRF120 VN1210N5 BR 115N sfn02202 RRF530

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    varistor 565-1

    Abstract: Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14
    Text: 2 | Protection Products Short Form Catalog Metal Oxide Varistor VDE Diameters Peak Current, 8/20ms Amps Varistor Voltages 5mm 100, 400, 800 18, 22, 27, 33, 39, 47, 56, 68, 82, 100, 120, 150, 180, 200, 220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560, 620, 680


    Original     		PDF 8/20ms varistor 565-1 Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP ÎË 9347963 UNITRODE dF CORP J ^347^1=3 GDlGSlb 5 |~~ 92D 10516 D T - M -/ 3 POWER MOSFET TRANSISTORS , JTX, JTXV 400 Volt, 0.3 Ohm N-Channel FEA TU R ES • Fa st S w itching • Low Drive C urren t • E a se of Parallelin g • No S eco n d B reakd ow n


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    MEM563C

    Abstract: MEM551 mem 551c diode 30 YF 2N4067 2N3609 MEM955 955A 550C 562C
    Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M


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    2N6767

    Abstract: No abstract text available
    Text: POWERMOSFET- TRANSISTORS , JTX JTXV¡¡Jgg 400 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • • • • • • The U nitrode power MOSFET design u tilizes th e m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		PDF supplie-1064 2N6767 2N6768

    mem637

    Abstract: mem616 tetrode 3N159 MEM5640 MEM563C MEM617 GP 617 DIODE 3n187 MEM680
    Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M


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    bdx340

    Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60


    OCR Scan     		PDF 2N6284 bdx340 Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2

    Bow94c

    Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF BDX53 Bow94c MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a

    G303

    Abstract: 2N6767
    Text: HE 0 I 4055452 000*1321, 5 | IN TERNATIONAL Data Sheet No. PD-9.339D RECTIFIER INTERNATIONAL RECTIFIER IOR T -39-13 HEXFETTRANSISTORS *«JAI\ITXV2I\I6768 *JANTXSN6768 JEDEC REGISTERED IM-CHANIMEL G POWER MOSFETs SN6768 SN6767 ‘ QUALIFIED TO MIL-S-19500/543


    OCR Scan     		PDF MIL-S-19500/543 JAI\ITXV2I\I6768 JANTXSN6768 SN6768 SN6767 2N6768 2N6767 T-39-13 G-306 G303

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.551B International IQR Rectifier JANTX2N6851 HEXFET POWER MOSFET JANTXV2N6851 [REF: MIL-PRF-19500/564] [GENERIC:IRFF9230] P-CHANNEL -200 Volt, 0.80Q HEXFET H E X F E T tec h n o lo g y is th e key to In te rn atio n al Rectifier’s advanced line of power M O S F E T transis­


    OCR Scan     		PDF JANTX2N6851 JANTXV2N6851 MIL-PRF-19500/564] IRFF9230] 5S452

    Untitled

    Abstract: No abstract text available
    Text: I p| j -0 P P I Q Ü Q P Q I Provisional Data Sheet No. PD-9.431 B I O R Rectifier JANTX2N6798 HEXFET POWER MOSFET JANTXV2N6798 [REF:MIL-PRF-19500/557] [GENERIC :IRFF230] N-CHANNEL 200 Volt, 0.40Q HEXFET H E X F E T techn o lo g y is th e key to Intern ation al


    OCR Scan     		PDF JANTX2N6798 JANTXV2N6798 MIL-PRF-19500/557] IRFF230]

    Untitled

    Abstract: No abstract text available
    Text: Int rnQt iOnQI Provisional Data Sheet No. PD-9.550B IQ R Rectifier JANTX2N6849 HEXFET POWER MOSFET JANTXV2N6849 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9130] P -C H A N N E L -100 Volt, 0.300 HEXFET H E X F E T techn o lo g y is the key to International R ectifier’s advanced line of power M O S F E T transis­


    OCR Scan     		PDF JANTX2N6849 JANTXV2N6849 MIL-PRF-19500/564] IRFF9130]

    Untitled

    Abstract: No abstract text available
    Text: N o vem b er 1995 FAIRCHILD M ICONDUCTQR i 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


    OCR Scan     		PDF 2N7000 2N7002 NDS7002A 400mA /NDS7002A

    2N7002

    Abstract: 2N7000 FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 2N7002A 2N7000 MOSFET 100C NDS7002A
    Text: Novem ber 1995 FAIRCHILD M IC D N D U C T O R 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF 2N7000 2N7002 NDS7002A 400mA OT-23, NDS7002A 2N7002A FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 2N7000 MOSFET 100C

    Untitled

    Abstract: No abstract text available
    Text: j p j -0 p p Q I j Q p| Q I Provisional Data Sheet No. PD-9.430B I O R Rectifier JANTX2N6796 HEXFET POWER MOSFET JANTXV2N6796 [REF:MIL-PRF-19500/557] [GENERIC:IRFF130] N -C H A N N E L 100 Volt, 0.180 HEXFET Product Summary1 H E X F E T techn o lo g y is th e key to Intern ation al


    OCR Scan     		PDF JANTX2N6796 JANTXV2N6796 MIL-PRF-19500/557] IRFF130] 4A55455

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    Bow94c

    Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF BUZ11 SGSP492 MTP3055A IRFP153 IRFP151 BUZ11S2 Bow94c Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222