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    2N7002A Price and Stock

    Toshiba America Electronic Components T2N7002AK,LM

    MOSFET N-CH 60V 200MA SOT23
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    DigiKey T2N7002AK,LM Reel 534,000 3,000
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    T2N7002AK,LM Cut Tape 2,864 1
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    Mouser Electronics T2N7002AK,LM 458,028
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    TTI T2N7002AK,LM Reel 24,000 3,000
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    Diodes Incorporated 2N7002AQ-7

    MOSFET N-CH 60V 180MA SOT23
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    DigiKey 2N7002AQ-7 Reel 237,000 3,000
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    2N7002AQ-7 Cut Tape 2,612 1
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    Avnet Americas 2N7002AQ-7 Reel 8 Weeks 3,000
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    Mouser Electronics 2N7002AQ-7 87,652
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    Arrow Electronics 2N7002AQ-7 3,000 8 Weeks 3,000
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    2N7002AQ-7 Cut Strips 2,063 8 Weeks 1
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    Bristol Electronics 2N7002AQ-7 690 34
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    Quest Components 2N7002AQ-7 552
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    TME 2N7002AQ-7 1,900 10
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    Diodes Incorporated 2N7002A-7

    MOSFET N-CH 60V 180MA SOT23
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    DigiKey 2N7002A-7 Reel 180,000 3,000
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    Avnet Americas 2N7002A-7 Reel 30,000 8 Weeks 3,000
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    2N7002A-7 Ammo Pack 32 Weeks, 4 Days 5
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    Mouser Electronics 2N7002A-7 120,525
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    Arrow Electronics 2N7002A-7 30,000 8 Weeks 3,000
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    2N7002A-7 Cut Strips 1,041 8 Weeks 1
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    Quest Components 2N7002A-7 43
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    2N7002A-7 20,092
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    2N7002A-7 2,400
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    TME 2N7002A-7 2,139 10
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    Avnet Asia 2N7002A-7 60,000 12 Weeks 12,000
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    Diodes Incorporated 2N7002AQ-13

    MOSFET N-CH 60V 180MA SOT23
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    DigiKey 2N7002AQ-13 Cut Tape 6,585 1
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    Avnet Americas 2N7002AQ-13 Reel 8 Weeks 10,000
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    Mouser Electronics 2N7002AQ-13 14,134
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    TME 2N7002AQ-13 6,379 10
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    New Advantage Corporation 2N7002AQ-13 20,000 1
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    Taiwan Semiconductor TSM2N7002AKCX RFG

    60V, 0.3A, SINGLE N-CHANNEL POWE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSM2N7002AKCX RFG Reel 6,000 3,000
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    Avnet Americas TSM2N7002AKCX RFG Reel 4 Weeks 3,000
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    Mouser Electronics TSM2N7002AKCX RFG 27,226
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    TME TSM2N7002AKCX RFG 5
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    Find more 2N7002A price and stock on Findchips.com

    2N7002A Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N7002A Diodes N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    2N7002A Korea Electronics N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    2N7002A-7 Diodes FETs - Single, Discrete Semiconductor Products, MOSFET N CH 60V 180MA SOT23 Original PDF
    2N7002-AE3-R Unisonic Technologies N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    2N7002A-F2-0000HF Yangzhou Yangjie Electronics N-CH MOSFET 60V 0.34A SOT-23-3L Original PDF
    2N7002AQ-13 Diodes Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET NCH 60V 180MA SOT23 Original PDF
    2N7002AQ-7 Diodes Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET NCH 60V 180MA SOT23 Original PDF

    2N7002A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7002A-7

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF 2N7002A 200mA AEC-Q101 DS31360 621-2N7002A-7 2N7002A-7 2N7002A-7

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES ・High density cell design for low RDS ON . E B L L ・Voltage controlled small signal switch. D ・Rugged and reliable.


    Original     		PDF 2N7002A 40ACTERISTIC 200mA, 115mA

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed  Small Surface Mount Package


    Original     		PDF 2N7002A AEC-Q101 DS31360

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed  Small Surface Mount Package


    Original     		PDF 2N7002A AEC-Q101 DS31360

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF 2N7002A 200mA AEC-Q101 DS31360

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed  Small Surface Mount Package


    Original     		PDF 2N7002A 200mA AEC-Q101 DS31360

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF 2N7002A 200mA AEC-Q101 DS31360

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS ON . E B L L Voltage controolled small signal switch. 2 H A 60 V 1 VDGR 60 V ) VGSS Gate-Source Voltage


    Original     		PDF 2N7002A 115mA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 8 1/4


    Original     		PDF 2N7002A

    2N7002A-RTK/P

    Abstract: No abstract text available
    Text: 2N7002A Green N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed This MOSFET has been designed to minimize the on-state


    Original     		PDF 2N7002A 200mA AEC-Q101 DS31360 2N7002A-RTK/P

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS ON . E B L L Voltage controolled small signal switch. 2 H A 60 V 1 VDGR 60 V ) VGSS Gate-Source Voltage


    Original     		PDF 2N7002A 115mA

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1.2kV HBM


    Original     		PDF 2N7002A AEC-Q101 J-STD-020 MIL-STD-202, DS31360

    702h

    Abstract: marking 702H
    Text: CMPDM7002AHC SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AHC is a High Current version of the 2N7002A Enhancementmode N-Channel MOSFET, designed for high speed


    Original     		PDF CMPDM7002AHC 2N7002A OT-23 500mA 702h marking 702H

    diode TA 20-08

    Abstract: 2N7002A
    Text: SEMICONDUCTOR 2N7002A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS ON . Voltage controolled small signal switch. Rugged and reliable. High saturation current capablity.


    Original     		PDF 2N7002A 200mA, 115mA diode TA 20-08 2N7002A

    AEC-Q101

    Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
    Text: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC


    Original     		PDF AEC-Q100/AEC-Q101 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q AEC-Q101 AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA

    transistor MN1

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF 2N7002A AEC-Q101 OT-23 OT-23 J-STD-020C MIL-STD-202, DS31360 transistor MN1

    2N7002A

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS ON . E B L L Voltage controolled small signal switch. 2 H A 60 V 1 VDGR 60 V ) VGSS Gate-Source Voltage


    Original     		PDF 2N7002A 115mA 2N7002A

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed This MOSFET has been designed to minimize the on-state


    Original     		PDF 2N7002A 200mA AEC-Q101 DS31360

    Untitled

    Abstract: No abstract text available
    Text: CMPDM7002AHC SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AHC is a High Current version of the 2N7002A Enhancementmode N-Channel MOSFET, designed for high speed


    Original     		PDF CMPDM7002AHC 2N7002A OT-23 350mW

    2N7002A

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS ON . E B L L Voltage controolled small signal switch. 2 H A 60 V 1 VDGR 60 V ) VGSS Gate-Source Voltage


    Original     		PDF 2N7002A 115mA 2N7002A

    MARKING WB SOT-23

    Abstract: 2N7002A SOT-23 MARKING WB WB MARKING WB SOT23
    Text: SEMICONDUCTOR 2N7002A MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 WB 1 2 Item Marking Description Device Mark WB 2N7002A * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF 2N7002A OT-23 MARKING WB SOT-23 2N7002A SOT-23 MARKING WB WB MARKING WB SOT23

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS ON . Voltage controolled small signal switch. Rugged and reliable. High saturation current capablity.


    Original     		PDF 2N7002A 200mA, 115mA

    SOT-23 MARKING mn1

    Abstract: transistor MN1 2N7002A-7 MARKING CODE 13 SOT23 2N7002A J-STD-020D
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF 2N7002A AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31360 SOT-23 MARKING mn1 transistor MN1 2N7002A-7 MARKING CODE 13 SOT23 2N7002A J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF 2N7002A 200mA AEC-Q101 DS31360