2N 5886 Search Results

2N 5886 Result Highlights (3)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
BQ25886RGER	Texas Instruments	Standalone, 2-cell, 2-A boost-mode battery charger for USB input 24-VQFN -40 to 85
BQ25886RGET	Texas Instruments	Standalone, 2-cell, 2-A boost-mode battery charger for USB input 24-VQFN -40 to 85

2N 5886 Price and Stock

Filter by Manufacturer


Microchip Technology Inc 2N5886 PNP POWER TRANSISTOR SILICON AMP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5886	Bulk			100	1 - 10 - 100 $62.5401 1000 $62.5401 10000 $62.5401	Buy Now
Avnet Americas	2N5886	Bulk		36 Weeks	100	1 - 10 - 100 $65.64292 1000 $59.87226 10000 $59.87226	Buy Now
Mouser Electronics	2N5886					1 $67.34 10 $67.34 100 $67.34 1000 $67.34 10000 $67.34	Get Quote
Newark	2N5886	Bulk			100	1 - 10 - 100 $62.54 1000 $60.13 10000 $60.13	Buy Now
Microchip Technology Inc	2N5886			36 Weeks		1 $67.34 10 $67.34 100 $67.34 1000 $67.34 10000 $67.34	Buy Now

NAC	2N5886	Tray			5	1 $68.7 10 $68.7 100 $63.28 1000 $58.65 10000 $58.65	Buy Now
Avnet Silica	2N5886			38 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N5886					1 - 10 - 100 $59.7 1000 $59.7 10000 $59.7	Buy Now
onsemi 2N5886G TRANS NPN 80V 25A TO204
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5886G	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	2N5886G	Bulk		3 Weeks	1	1 $7.86 10 $7.07 100 $6.68 1000 $6.68 10000 $6.68	Get Quote
Bristol Electronics	2N5886G		7			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	2N5886G		5,400		1	1 $3.65 10 $3.65 100 $3.43 1000 $3.1 10000 $3.1	Buy Now
SPC Multicomp 2N5886. Transistor, Npn To-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:80V; Transistor Case Style:To-3; No. Of Pins:2; Svhc:No Svhc (19-Dec-2011); Av Current Ic:25A; Continuous Collector Current Ic Max:25A; Current Ic Rohs Compliant: No \|Multicomp Pro 2N5886.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	2N5886.	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
ACTIVE COMPNTS/DIODES 2N5886
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bisco Industries	2N5886		1,000			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Motorola Semiconductor Products 2N5886
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5886		194			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2N5886		6			1 $3.54 10 $2.95 100 $2.95 1000 $2.95 10000 $2.95	Buy Now
	2N5886		2			1 $5.2599 10 $4.3833 100 $4.3833 1000 $4.3833 10000 $4.3833	Buy Now
	2N5886		1			1 $3.09 10 $3.09 100 $3.09 1000 $3.09 10000 $3.09	Buy Now
ComSIT USA	2N5886		259			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ES Components	2N5886		99			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 2N 5886 price and stock on Findchips.com

2N 5886 Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5886	Motorola	Complementary Silicon High Power Transistors	Original	PDF
2N5886	On Semiconductor	Complementary Silicon High-Power Transistors	Original	PDF
2N5886	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200	Original	PDF
2N5886	STMicroelectronics	TRANS GP BJT NPN 80V 25A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200	Original	PDF
2N5886	STMicroelectronics	COMPLEMENTARY SILICON HIGH POWER TRANSISTORS	Original	PDF
2N5886	STMicroelectronics	HIGH CURRENT SILICON NPN POWER TRANSISTOR - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200	Original	PDF
2N5886	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N5886	API Electronics	25 Amp Transistors	Scan	PDF
2N5886	Boca Semiconductor	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200	Scan	PDF
2N5886	Central Semiconductor	Leaded Power Transistor General Purpose	Scan	PDF
2N5886	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N5886	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N5886	General Electric	High-current, high-power, high-speed power transistor. 80V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200	Scan	PDF
2N5886	Mospec	POWER TRANSISTORS(25A,200W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200	Scan	PDF

2N5886	Mospec	Complementary Silicon High-Power Transistor	Scan	PDF
2N5886	Motorola	The European Selection Data Book 1976	Scan	PDF
2N5886	Motorola	European Master Selection Guide 1986	Scan	PDF
2N5886	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N5886	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5886	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

2N 5886 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N5886 MOTOROLA Abstract: 2N5885 MOTOROLA 2N5984 2N5883 2N5883 MOTOROLA 2N5884 2N5885 2N5886 transistor 2N5884 Text: MOTOROLA Order this document by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N 5883 C om plem entary Silicon H igh-P ow er Transistors 2N 5884* NPN . . . designed for general-purpose power amplifier and switching applications. • • • • 2N 5885 Low Collector-Emitter Saturation Voltage —	OCR Scan	2N5883/D 2N5883 2N5885 2N5884 2N5886 2N5883/D 2N5886 MOTOROLA 2N5885 MOTOROLA 2N5984 2N5883 MOTOROLA transistor 2N5884	PDF
2N5885 Abstract: 2N 5883 2n 5886 Text: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current	OCR Scan	2N5885, 2N5886 90-mJ 2N5885 2N5885 2N 5883 2n 5886	PDF
BD368 Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631 Text: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0	OCR Scan	MJ4034 MJ4031 BD317 BD318 2N5629 2N6029 MJ4035 MJ4032 2N5630 2l\l6030 BD368 MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5631	PDF
PNP 2SD Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715 Text: 1 SEMICONDUCTORS INC OTE D \| fi!3bbSG 0D0DSÖ2 4 \| Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK AGE 2N 3054 2N 3055	OCR Scan	2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224	PDF
2N5883 Abstract: 2N 5883 2N588 Text: T Y P E S 2N5883. 2N588 4 P- N - P S I N G L E - D I F F U S E D S I L I C O N P O W E R T R A N S I S T O R S c < FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING APPLICATIO N S D ESIG N ED FOR C O M P L E M E N T A R Y USE W ITH 2N 5885, 2N 5886 •	OCR Scan	2N5883. 2N588 90-mJ 2N5883 2N 5883	PDF
2N5730 Abstract: 2N5760 ppc products to-3 2N5729 2N5731 2N5732 2N5733 2N5734 2N5758 2N5759 Text: nn \ II / I I II PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST B R E A K D O V \ /N SAT. V O L T A I 3ES M a X. hFE V ( DLTAG Ei NPN •c CASE V CB V CE V EB V CE (V) (A) M in . M ax . (A) 'b (A) V CE (V) V BE (V) 2N 5729 TO-5 100 80 5 2 2 30 300 2 0.5	OCR Scan	2N5729 2N5730 O-59/I 2N5731 O-61/1 2N5732 2N5733 2N5734 2N5758 2N5759 2N5730 2N5760 ppc products to-3 2N5729 2N5731 2N5732 2N5733 2N5734 2N5758 2N5759	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
triac zd 607 Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published	OCR Scan	thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p	PDF
3055t Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771 Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W\| 3 3 3 3 3 80 80 90 100 115	OCR Scan	2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771	PDF
to220aa Abstract: TO-220AA 2N5301 2N5302 2N5303 2N5496 2N5885 2N5886 2N6129 2N6326 Text: THO nSO N/ D I S T R I BU TO R ^oabfl?3 0G0s?n m o SÔE D TCSK Bipolar Power Transistors General Purpose Continued v C E (s a t) " v hFE T y p e N o. v CEO<a u s > V V C E V (s u s ) V 40 60 60 60 80 80 80 - - - - 2 N 5 4 9 6 P LA S T IC FA M ILY ( n - p - n )	OCR Scan	2N5303 2N5301 2N6326 2N5302* 2N5885 O-204AA/ 2N6327 2N5886 2N5496 to220aa TO-220AA 2N5302 2N6129	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
2N5883 Abstract: 2N5885 2N5884 2N5886 Text: Datasheet 2 N 5 8 8 3 , 2 N 5 8 8 4 PNP 2 N 5 8 8 5 , 2 N 5 8 8 6 NPN Central COMPLEMENTARY SILICON POWER TRANSISTORS Semiconductor Corp. JEDEC TO-3 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors	OCR Scan	117BB 435-1B24 2N5883, 2N5884 2N5885, 2N5886 2N5884, 2N5883 2N5885	PDF
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan		PDF

5886 Abstract: No abstract text available Text: File N um ber 1041 2N5885, 2N5886 High-Current, High Power, High-Speed N-P-N Power Transistors TERMINAL DESIGNATIONS Features: • Specification fo r h rt and I ' c e [saf] up to 25 A m C urrent gain bandw idth p roduct fT = 4 MHz [m in.] at 1 A m Low saturation voltage with high beta	OCR Scan	2N5885, 2N5886 O-204AA 2N5885 2N5886 9ZCS-2980Î 5886	PDF
T35W Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,	OCR Scan	10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d	PDF
TRANSISTOR tip122 CHN 949 Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.	OCR Scan	38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175	PDF
1N5160 Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A	OCR Scan	1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt	PDF
2n3773 power Amplifier circuit diagrams Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete	OCR Scan	AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U	PDF
1n52408 Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which	OCR Scan	301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC	PDF
in5388 Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic Text: THE SEMICONDUCTOR DATA LIBRARY r^r fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor	OCR Scan	plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic	PDF
2N5886 Abstract: 2N5883 2N5884 2N5885 S200 40 amp collector current CWB-10 Text: 2N5883, 2N5884 PNP I 2N5885, 2N5886 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) 2N5883, 2N5885 2N5884, 2N5886	OCR Scan	2N5883, 2N5884 2N5885, 2N5886 2N5885 2N5884, 2N5886 2N5885 2N5883 S200 40 amp collector current CWB-10	PDF
Germanium drift transistor Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of	OCR Scan	orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF

2N 5886 Search Results

2N 5886 Result Highlights (3)

2N 5886 Price and Stock

Microchip Technology Inc 2N5886

onsemi 2N5886G

SPC Multicomp 2N5886.

ACTIVE COMPNTS/DIODES 2N5886

Motorola Semiconductor Products 2N5886

2N 5886 Datasheets (41)

2N 5886 Datasheets Context Search

2N5886 MOTOROLA

2N5885

BD368

PNP 2SD

2N5883

2N5730

Transistor 2SA 2SB 2SC 2SD

triac zd 607

3055t

to220aa

2N2222A 338

2sb504

2N5883

JE1100

5886

T35W

TRANSISTOR tip122 CHN 949

1N5160

2n3773 power Amplifier circuit diagrams

1n52408

in5388

2N5886

Germanium drift transistor

triac zd 607