2SK1900
Abstract: ITR02166 ITR02167 ITR02168 ITR02169 ITR02170 ITR02171
Text: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable
|
Original
|
PDF
|
2SK1900
EN4210A
PW10s,
2SK1900
ITR02166
ITR02167
ITR02168
ITR02169
ITR02170
ITR02171
|
Untitled
Abstract: No abstract text available
Text: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable
|
Original
|
PDF
|
EN4210A
2SK1900
|
Untitled
Abstract: No abstract text available
Text: 2SK1900FD Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.65 Minimum Operating Temp (øC)-55
|
Original
|
PDF
|
2SK1900FD
|
EN4210
Abstract: 2SK1900
Text: Ordering number:EN4210 N-Channel Silicon MOSFET 2SK1900 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1900] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
|
Original
|
PDF
|
EN4210
2SK1900
2SK1900]
2SK1900-applied
EN4210
2SK1900
|
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
|
Original
|
PDF
|
AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
|
TT2192
Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
Text: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.
|
Original
|
PDF
|
2SK1886
2SK4043LS
SB100-09K
TIG004SS
TIG030TS
2SC4493
2SK1887
SB10-18
TIG004T
TT2192
sma4212
2SJ519
2sc5681
2SK1871
2SC5044
2SK3666
2sc6091
2SC5688
EC4K01KF
|
100AVS
Abstract: No abstract text available
Text: 2SK1900 2090 2093 LD L o w D rive S e r i e s VDSs = 60V N Channel Power MOSFET E'42 10 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1900-applied equipm ent.
|
OCR Scan
|
PDF
|
2SK1900
2SK1900-applied
V0D-30V
100AVS
|
2SK1900
Abstract: 2S100
Text: 2SK1900 2093 2090 lD L o w D rive S eries V Ds s = 6 0 V N Channel Power MOSFET 4 2 10 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1900-applied equipm ent.
|
OCR Scan
|
PDF
|
2SK1900
2SK1900-applied
10/iS,
7TT707b
2SK1900
2S100
|
2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
|
OCR Scan
|
PDF
|
2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
|
2SK1925
Abstract: No abstract text available
Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5
|
OCR Scan
|
PDF
|
2SK1737
2SK1738
T0220
2SK1921*
2SK2142*
2SJ254
0220M
2SK1925
|
TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
|
OCR Scan
|
PDF
|
T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
|
2SK243-2
Abstract: 2SK2432 2sk1470
Text: • LD Series Lineup VDSS = 60V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package VfiSS VG8S *D A 2SK1470 CP 0.4 2.0 PCP +15 TP 2SK1472 2SK2432 ZP 0.9/1.2 0.4 45 0.45/0.6 0.35/0.45 2.0 150 1.2/1.6 0.9/1.2 1.0 45 30 0.08/0.11 0.06/0.08 8.0
|
OCR Scan
|
PDF
|
2SK1846
2SK1470
2SK1726
2SK1471
2SK1472
2SK2432
2SK1898
2SK1899
2SK1900
2SK21G4
2SK243-2
|
2SK2164
Abstract: 2SK1885 2SJ270 2SJ260 2sj261
Text: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
|
OCR Scan
|
PDF
|
2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2SK2164
2SK1885
2SJ270
2SJ260
2sj261
|
NO421
Abstract: 2SK190 2SK1900
Text: Ordering number: EN4210 _ 2SK190Ö No.4210 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.
|
OCR Scan
|
PDF
|
EN4210
2SK190Ã
2SK1900-applied
NO421
2SK190
2SK1900
|
|
|
SBA10Q-O4Y
Abstract: 2SK2439 2SJ40 SK2555 FW106
Text: • Application Examples Synchronous rectifier Mounted Photos Synchronous Rectifier) ■ Electrical Connections ■ SOP8 Guaranteed Source-Wire Fusing Current I d (A.) ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta = 25 C) Package
|
OCR Scan
|
PDF
|
SB20W03P
SB30-03P
SB40W
SBA50-04Y
SBA10Q-O4Y
SBA130-04ZP
SBA160-04Y
SBA160-04ZP
250mm2
2SJ469
2SK2439
2SJ40
SK2555
FW106
|
BI 370
Abstract: 2SK1878 LM9005 2501L 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 BA 5810
Text: - 124 - f £ tt % ffl & m S m * ê JV K V m * (V) * * M 3 & 1 * (A) * P d /P c h Ig s s (max) (W) (A) Vg s (V) (min) (max) Vos (A) (A) (V) fó Í# 1*È (Ta=25‘ C) (min) (V) (max) Vos (V) (V) (min) (S) Id (A) Vd s (V) % ? Id (A) 2SK1852 NEC SW.Motor-D
|
OCR Scan
|
PDF
|
2SK1852
2SK1853
2SK1859
2SK1862
2SK1863
1116B
2SK1911
130ns,
370nstyp
2SK1918
BI 370
2SK1878
LM9005
2501L
BA 5810
|
2S1265
Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
Text: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
|
OCR Scan
|
PDF
|
low-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
2S1265
bj 950 131- 6
2SK1885
2SJ type
2sj262
2SK1883
2SK3066
2SK2432
2SJ253
2SJ260
|
