3772-1
Abstract: 2SK1471
Text: Ordering number:EN3772A N-Channel Silicon MOSFET 2SK1471 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1471] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2
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EN3772A
2SK1471
2083B
2SK1471]
2092B
3772-1
2SK1471
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN3772A N-Channel Silicon MOSFET 2SK1471 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1471] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2
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EN3772A
2SK1471
2083B
2SK1471]
2092B
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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2SK1471
Abstract: No abstract text available
Text: Ordering num ber: E N 3 77 2A _ 2SK1471 N0.3772A N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. b s o lu te M ax im u m R a tin g s a t Ta —25°C
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EN3772A
2SK1471
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PDF
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d3s diode
Abstract: DIODE d3s 2092A
Text: 2SK1471 LD L o w D rive S eries V D3s = 6 0 V 2083 A2092A N Channel Power M OSFET E 3772A F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage
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OCR Scan
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2SK1471
A2092A
71993TH
d3s diode
DIODE d3s
2092A
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PDF
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bd7s
Abstract: 2SK1471 2083A 0d13
Text: 2SK1471 2083A LD L o w D rive S eries V Dss = 6 0 V 2092A N Channel Power MOSFET 3772A Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. b solute M axim um R atings at Ta = 25°C Drain to Source Voltage V DSS Gate to Source Voltage
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OCR Scan
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2SK1471
10//S,
bd7s
2SK1471
2083A
0d13
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PDF
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e1220
Abstract: 2SK2437
Text: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.
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OCR Scan
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MT950206TR
e1220
2SK2437
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PDF
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2SK2747
Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282
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OCR Scan
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Ta-25t)
2SJ282
T0220
2SJ348
2SJ478V
2SJ254
T0220ML
2SJ255
2SK2747
2SK2748
2SJ403
2SK536
2SK1467
2SJ256
2SJ263
2SJ264
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PDF
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J254
Abstract: J188 J256 J287
Text: LD S e r i e s L o w Dr i ve Sanyo en g in eers have developed a se rie s of devices th a t com bine th e featu res of both LSI an d pow er device process technologies to achieve a low d riv e voltage ofV (js = 4V for sa tu ra tio n , m aking them ideal for 5V d riv e logic
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OCR Scan
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2SJ191
J254
J188
J256
J287
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PDF
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J289
Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications
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Sma11-sized
2SK1839<
2SK536
2SK1840UJ)
3SK248CNJ)
2SK669
2SK1841
2SK583
Characteristics/Ta-25X;
12/55m
J289
3SK266
2SK1728
3sk251
DS-17 SANYO
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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PDF
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2SK243-2
Abstract: 2SK2432 2sk1470
Text: • LD Series Lineup VDSS = 60V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package VfiSS VG8S *D A 2SK1470 CP 0.4 2.0 PCP +15 TP 2SK1472 2SK2432 ZP 0.9/1.2 0.4 45 0.45/0.6 0.35/0.45 2.0 150 1.2/1.6 0.9/1.2 1.0 45 30 0.08/0.11 0.06/0.08 8.0
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2SK1846
2SK1470
2SK1726
2SK1471
2SK1472
2SK2432
2SK1898
2SK1899
2SK1900
2SK21G4
2SK243-2
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CI 7001
Abstract: 2SD1203 SS170 2sb1205 2SD180
Text: so h yo New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5 /6 - p in XPs a re in te rm e d ia te siz e d d e v ic e s between Sanyo PCP and TP packages and have high power c a p a b il i ty . T h is package lin e in c lu d e s la rg e c u rre n t sw itc h in g t r a n s i s t o r s e r i e s , power MOS FET s e rie s , and o th e r d evice s e rie s .
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FX855
FX851
T940120TR
CI 7001
2SD1203
SS170
2sb1205
2SD180
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PDF
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2SK1471
Abstract: 2SK2153 2SK1474 2SB1205 160i FX209 2SJ188 2SJ336 2SK1468 CI 7001
Text: SAUYO New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.
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900mm2XO
SB07-03P
2SK1467
SB05-05P
f-10pF
2SJ190
SB05-09
2SK1470
2SK1471
2SK2153
2SK1474
2SB1205
160i
FX209
2SJ188
2SJ336
2SK1468
CI 7001
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
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PDF
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J289
Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications
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OCR Scan
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3SK265
3SK266
3SK248
12/55m
2/80m
45/-/50m
130m/65m
21/90m
MT931224TR
J289
K2171
2sj281
2SK1847
2SK1470 KD
K1470
2sk669
K1311
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PDF
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2SK1487
Abstract: LM 1495 2sk1477 2SK1486 2SK1480 1494z 2SK1470 2SK1482 2SK1491 2SK1465
Text: - 106 - M % tt « m £ m it Í V Ì 1 % K £ ft ft « V* V P d /P c h *t* (V) * * ft * (A) (W) Ig s s (max) (A) Vg s (V) (min) (A) (max) V d s (A) (V) (Ta=25°C) ft 4# % (min) (max) V d s (V) (V) (V) £ m (min) (S) Id (A) Vd s (V) Id (A) 2SK1465 HS SW
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2SK1465
2SK1466
2SK1467
2SK1468
2SK1469
2SK1470
2SK1487
100nstyp
2SK1488
140ns,
2SK1487
LM 1495
2sk1477
2SK1486
2SK1480
1494z
2SK1470
2SK1482
2SK1491
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SBA10Q-O4Y
Abstract: 2SK2439 2SJ40 SK2555 FW106
Text: • Application Examples Synchronous rectifier Mounted Photos Synchronous Rectifier) ■ Electrical Connections ■ SOP8 Guaranteed Source-Wire Fusing Current I d (A.) ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta = 25 C) Package
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OCR Scan
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SB20W03P
SB30-03P
SB40W
SBA50-04Y
SBA10Q-O4Y
SBA130-04ZP
SBA160-04Y
SBA160-04ZP
250mm2
2SJ469
2SK2439
2SJ40
SK2555
FW106
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