J334
Abstract: 2SJ334
Text: 2SJ334 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ334 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 29mΩ(標準) z オン抵抗が低い。
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2SJ334
-100A
-10VID
2-10R1B
SC-67
2002/95/EC)
J334
2SJ334
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J334 transistor
Abstract: j334 2SJ334
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance
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2SJ334
J334 transistor
j334
2SJ334
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J334 transistor
Abstract: j334 2SJ334 transistor j334
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance
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2SJ334
J334 transistor
j334
2SJ334
transistor j334
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Untitled
Abstract: No abstract text available
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance
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2SJ334
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2SJ334
Abstract: No abstract text available
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) l High forward transfer admittance
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2SJ334
2SJ334
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J334 transistor
Abstract: transistor j334 J334 2SJ334 2SJ33
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance
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2SJ334
J334 transistor
transistor j334
J334
2SJ334
2SJ33
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J334 transistor
Abstract: J334 transistor j334 2SJ334
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance
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2SJ334
J334 transistor
J334
transistor j334
2SJ334
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Untitled
Abstract: No abstract text available
Text: 2SJ334 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance
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2SJ334
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J334 transistor
Abstract: 2SJ334 J334
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance
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2SJ334
J334 transistor
2SJ334
J334
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082B
BCJ0082A
2SK4207
to220sis
TPCA*8023
tk80A08K3
TPC8119
TK40A08K3
2SK4112
ssm3j16fs
2sk3568
TPC8A03
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J334 transistor
Abstract: transistor j334
Text: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 3.2 ± 0 .2 1° 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.) High Forward Transfer Admittance : |Yfs| = 23S(Typ.)
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OCR Scan
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2SJ334
--60V)
V10ms¿
--50V,
747//H
J334 transistor
transistor j334
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Untitled
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SJ334 DATA SILICON P CHANNEL MOS TYPE L 2- 7 T - MOS V (2SJ334) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE
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2SJ334
2SJ334)
--60V)
20kfi)
2SJ334
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J334 transistor
Abstract: No abstract text available
Text: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.)
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OCR Scan
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2SJ334
V10msÂ
747//H
J334 transistor
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2SJ334
Abstract: No abstract text available
Text: TOSHIBA 2SJ334 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ334 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10 ± 0.3 0 3 .2 ± 0.2
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2SJ334
2SJ334
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K2312
Abstract: j378 K2314
Text: L2-7c-MOS V Maximum Rating Application Type No. Id A DC/DC Converter High Current Switching Motor Drive 2SJ360 “2SJ377 •2SJ378 2SJ349 2SJ334 2SJ360 2SK2229 2SK2231 2SK2232 2SK 2311 2SK2233 2SK2266 •2SK2312 •2SK2173 '2SK 2313 '2SK 2267 2SK2200 2SK2201
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O-220
T0-220
O-220FL/SM
O-220AB
2SJ360
2SJ377
K2312
j378
K2314
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TE 004
Abstract: 2SJ334 747h
Text: TOSHIBA 2SJ334 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ334 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS r 10 ± 0 .3 ^ 3 .2 ± 0.2
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2SJ334
TE 004
2SJ334
747h
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2sk1603
Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378
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2SJ115
2SJ123
2SJ126
2SJ147
2SJ183
2SJ200
2SJ201
2SJ224
2SJ238
2SJ239
2sk1603
2SK2236
2SK1723
2SK2222
2sk538
2SK180S
2SK584
2SK1882
2SK1513
2sk1915
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ334 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV i <; i33d HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate D rive
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2SJ334
--29m
--100/iA
--60V)
747//H
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Jab zener
Abstract: No abstract text available
Text: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)
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T0-220
2SJ334
2SK2312
Packag55
2SK1379
Jab zener
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