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    Samtec Inc TW-06-02-S-D-227-SM-011

    Conn Board Stacker HDR 12 POS 2mm Solder ST SMD - Bulk (Alt: TW-06-02-S-D-227-S)
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    Newark TW-06-02-S-D-227-SM-011 Bulk 1
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    Master Electronics TW-06-02-S-D-227-SM-011
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    Others 2SD227

    Bipolar Junction Transistor, NPN Type, TO-92
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    Quest Components 2SD227 20
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    2SD227 Datasheets (63)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD227 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD227 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    2SD227 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SD227 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD227 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD227 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD227 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD227 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD227 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD227 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD227 Unknown Cross Reference Datasheet Scan PDF
    2SD227 Semico Medium Power Transistors Scan PDF
    2SD227 USHA Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. Scan PDF
    2SD2270 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2270 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2271 Toshiba TRANS DARLINGTON NPN 200V 12A 3(2-10R1A) Original PDF
    2SD2271 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2271 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2271 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2271 Toshiba Silicon NPN transistor for motor drive applications and high current switching applications Scan PDF

    2SD227 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1503

    Abstract: 2SD2276
    Text: SavantIC Semiconductor Product Specification 2SB1503 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification


    Original     		PDF 2SB1503 2SD2276 2SB1503 2SD2276

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2274 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1501 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 3.0 20.0±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage


    Original     		PDF 2SD2274 2SB1501

    2SD2276

    Abstract: 2SB1503
    Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1503 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 140 V Emitter to base voltage


    Original     		PDF 2SD2276 2SB1503 2SD2276 2SB1503

    2SB1503

    Abstract: 2SD2276 2sb15
    Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 5.0±0.3 3.0 26.0±0.5 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)


    Original     		PDF 2SD2276 2SB1503 2SB1503 2SD2276 2sb15

    2SB1503

    Abstract: 2SD2276
    Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1503 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 160 V Collector to emitter voltage


    Original     		PDF 2SD2276 2SB1503 2SB1503 2SD2276

    2SB1503

    Abstract: 2SD2276 darlington power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS


    Original     		PDF 2SD2276 -160V; -140V; 2SB1503 2SD2276 darlington power transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SD2279 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SD2279

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1500 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 3.0 20.0±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage


    Original     		PDF 2SD2273 2SB1500

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 1.0±0.2 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −140 V Emitter-base voltage (Collector open)


    Original     		PDF 2SB1503 2SD2276

    2SB1503

    Abstract: 2SD2276
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2276 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −140 V Emitter to base voltage


    Original     		PDF 2SB1503 2SD2276 2SB1503 2SD2276

    2SB1500

    Abstract: PT10V 2SD2273 IC6100
    Text: Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1500 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage


    Original     		PDF 2SD2273 2SB1500 2SB1500 PT10V 2SD2273 IC6100

    D2271

    Abstract: transistor d2271 2SD2271
    Text: 2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min)


    Original     		PDF 2SD2271 D2271 transistor d2271 2SD2271

    2SB1502

    Abstract: 2SD2275 2sb15
    Text: Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120


    Original     		PDF 2SB1502 2SD2275 2SB1502 2SD2275 2sb15

    2SB1503

    Abstract: 2SD2276
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –160


    Original     		PDF 2SB1503 2SD2276 2SB1503 2SD2276

    2SB1502 TRANSISTOR

    Abstract: 2SB1502 2SD2275
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -4A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -4A ·Complement to Type 2SD2275 APPLICATIONS


    Original     		PDF 2SD2275 -120V; -100V; 2SB1502 TRANSISTOR 2SB1502 2SD2275

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow


    Original     		PDF 2SB1503 2SD2276

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1501 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2274 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 4.0 6.0 3.0 20.0±0.5 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SB1501 2SD2274

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2271 TOSHIBA TRANSISTOR 2SD2271 SILICON NPN TRIPLE DIFFUSED TYPE DRALINGTON PO W ER TRANSISTOR MOTOR DRIVE APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 • • High DC Current Gain : hjrj; = 500 (Min.) (V q e = 2V, Iq = 5A)


    OCR Scan     		PDF 2SD2271

    2SD2232

    Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
    Text: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281


    OCR Scan     		PDF 2SD2230 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SB1500 2SD221 2SB1501 2sb1492 2SD2255 2SD2233 2SD2234 2SD2247

    2SD2271

    Abstract: No abstract text available
    Text: T O S H IB A 2SD2271 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DRALINGTON PO W ER TRANSISTOR Unit in mm MOTOR DRIVE APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS • • 10 + 0.3 , f 3.2 ± 0 . 2 2.7±02 High DC Current Gain : hpE = 500 (Min.) (Vq e = 2V, 1^ = 5A)


    OCR Scan     		PDF 2SD2271 2SD2271

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2271 TENTATIVE DATA Unit in mm MOTOR DRIVE.APPLICATIONS. HIGH CURRENT SWITCHING APPLICATIONS. 10±0.3 ¿ 3.2Í 0.2 • High DC Current Gain : hpE=500 (Min.) (Vce=2V, Iq =5A) ■ High Breakdown Voltage : V q e o (SUS)=200V (Min.)


    OCR Scan     		PDF 2SD2271

    2SD2271

    Abstract: No abstract text available
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2271 SILICON NPN TRIPLE DIFFUSED TYPE DRALINGTON POWER TRANSISTOR MOTOR DRIVE APPLICATIONS 2SD2271 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS r High DC Current Gain : hFE = 500 (Min.) (VCE = 2V, Ic = 5A) High Breakdown Voltage : V ^ eq (S U S )~ 2 0 0 V (Min.)


    OCR Scan     		PDF 2SD2271 2SD2271

    2SD227

    Abstract: 2SA642 251C hFE-150
    Text: 2SD227 2SD227 NPN X 7 j uf ëi / IJ 3 V h ^ V v X ^ / N P N SILICON EPITAXIAL TRANSISTOR ^3 S j± S ^]lilli f f l/ A u c li o Frequency A m p lifie r f t ^ /F E A T U R E S W M /P A C K A G E DIMENSIONS 500mw iigïH#3 f» • 2SA642 i ; 3 v y j ^ y f Suitable for output applications of 500mW portable radios in class B


    OCR Scan     		PDF 2SD227 500mW 2SA642 2SA642. W60/PACKAGE SC-43 IPA33 2SD227 251C hFE-150

    2SD2271

    Abstract: No abstract text available
    Text: TO SH IBA SILICON NPN TRIPLE DIFFUSED TYPE DRALINGTON POWER TRANSISTOR MOTOR DRIVE APPLICATIONS 2SD2271 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 ^3.2 ± 0.2 -*i< o f r • • High DC Current Gain : hFE = 500 (Min.) (VCE = 2V, Ic = 5A)


    OCR Scan     		PDF 2SD2271 2SD2271