2SD2052
Abstract: 2SD205 2SB1361
Text: Inchange Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN
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2SD2052
2SB1361
2SD2052
2SD205
2SB1361
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2SB1361
Abstract: 2SD2052
Text: SavantIC Semiconductor Product Specification 2SB1361 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2052 ·High transition frequency ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING
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2SB1361
2SD2052
-150V;
-20mA
2SB1361
2SD2052
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage
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2SD2052
2SB1361
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2SD2052
Abstract: 2SB1361
Text: SavantIC Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN
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2SD2052
2SB1361
2SD2052
2SB1361
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 M Di ain sc te on na tin nc ue e/ d Unit: mm ● ● • Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage
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2SD2052
2SB1361
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PT10V
Abstract: 2SB1361 2SD2052
Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage
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2SB1361
2SD2052
PT10V
2SB1361
2SD2052
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2SB1361
Abstract: 2SD2052
Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage
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2SB1361
2SD2052
2SB1361
2SD2052
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2SB1361
Abstract: 2SD2052 PANASONIC
Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage
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2SD2052
2SB1361
2SB1361
2SD2052
PANASONIC
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2SB1361
Abstract: 2SD2052
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1361 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2052 APPLICATIONS ·Designed for high power amplifications.
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2SB1361
-150V
2SD2052
-150V;
-20mA;
2SB1361
2SD2052
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2SB1361
Abstract: 2SD2052
Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage
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2SD2052
2SB1361
2SB1361
2SD2052
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2SB1361
Abstract: 2SD2052 2SB136
Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 M Di ain sc te on na tin nc ue e/ d Unit: mm ● ● ● 0.7 Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage
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2SD2052
2SB1361
2SB1361
2SD2052
2SB136
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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A 933 S transistors
Abstract: 2SB1361 2SD2052 IS020
Text: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features Unit *. mm 5.2max. ' / 3.2 , 15.5max. , 6.9min. • V ery good lin earity o f DC c u r re n t gain hKF
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2SD2052
2SB1361
tc-25
A 933 S transistors
2SB1361
2SD2052
IS020
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294a
Abstract: 2SB1361 2SD2052
Text: Power T ransistors 2SB1361 2SB1361 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • V ery good linearity o f DC current gain I i f e • W ide area o f sa fety operation (ASO)
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2SB1361
2SD2052
bT32fl52
294a
2SB1361
2SD2052
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Untitled
Abstract: No abstract text available
Text: 2SB1361 Power T ransistors 2SB1361 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 Unit : mn 5 2max. 1/3.2 15.5max. • Features 6.9min. • V ery good linearity of DC c u rre n t gain I i f e
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2SB1361
2SD2052
01b2tÃ
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2SB1362
Abstract: 2SD2052
Text: Power Transistors 2SB1362 2SB1362 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • Very good linearity of DC current gain Fife • Wide area of safety operation (ASO) • High transition frequency (fr)
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2SB1362
2SD2052
13SflSE
2SB1362
2SD2052
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
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2SC3558
Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
Text: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD
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2SC3331
2SC2021
2SD1851
2SD2532
2SD1209
2SD1383K
2SD1400
2SD1429
2SD1060
2SC3540
2SC3558
2SD1431
2SD2061
2SC2021
2SD1407
2sd 1507
2SD1488
k 1487
2SD2532
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nec 2501
Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534
Text: - m € Type No. tt « Manuf. 2SC 2473 B 2SC 2474 B 2SC 2475 B 2SC 2476 a m h SANYO 3S S TOSHIBA 2SC2753 ¡L m m h NEC B u HITACHI 2SC2Q26 * ± a FU JIT S U fâ T MATSUSHITA B te T 2SC4269 2SC3121 2SC2755 2SC4229 2SC 2451 - M 2 2SC3902 2SC362Í 2SC269ÛA
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2SC2473
2SC2474
2SC2475
2SC2476
2SC2477
2SC2480
2SC2451
2SC2482
2SD2483
2SC2484
nec 2501
nec 2502
NEC 2505
NEC 2504
NEC 2506
2482 H
2SC1555
nec 2508
2SC3660
2SC2534
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
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2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SA1185
2SB1054/2SD1485
2SB1421
2SD1457
2SD1457A
2SB1252/2SD1892
2SB1502/2SD2275
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SD2340 equivalent
Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2254
2SB1493
2SD1485
2SB1531
2SD2328
2SA1185
2SD2052 equivalent
2SD1641
2SD1707
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2SD2340 equivalent
Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2250
2SD1485
d2554
2SD2340
audio Darlington 200 W
2SD2052 equivalent
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