2SD2052
Abstract: 2SD205 2SB1361
Text: Inchange Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN
|
Original
|
2SD2052
2SB1361
2SD2052
2SD205
2SB1361
|
PDF
|
2SB1361
Abstract: 2SD2052
Text: SavantIC Semiconductor Product Specification 2SB1361 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2052 ·High transition frequency ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING
|
Original
|
2SB1361
2SD2052
-150V;
-20mA
2SB1361
2SD2052
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage
|
Original
|
2SD2052
2SB1361
|
PDF
|
2SD2052
Abstract: 2SB1361
Text: SavantIC Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN
|
Original
|
2SD2052
2SB1361
2SD2052
2SB1361
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.7 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)
|
Original
|
2SB1361
SC-92
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 M Di ain sc te on na tin nc ue e/ d Unit: mm ● ● • Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage
|
Original
|
2SD2052
2SB1361
|
PDF
|
PT10V
Abstract: 2SB1361 2SD2052
Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage
|
Original
|
2SB1361
2SD2052
PT10V
2SB1361
2SD2052
|
PDF
|
2SB1361
Abstract: 2SD2052
Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage
|
Original
|
2SB1361
2SD2052
2SB1361
2SD2052
|
PDF
|
2SB1361
Abstract: No abstract text available
Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit: mm 5.0±0.2 0.7 15.0±0.3 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)
|
Original
|
2SB1361
SC-92
2SB1361
|
PDF
|
2SB1361
Abstract: 2SD2052 PANASONIC
Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage
|
Original
|
2SD2052
2SB1361
2SB1361
2SD2052
PANASONIC
|
PDF
|
2SB1361
Abstract: 2SD2052
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1361 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2052 APPLICATIONS ·Designed for high power amplifications.
|
Original
|
2SB1361
-150V
2SD2052
-150V;
-20mA;
2SB1361
2SD2052
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit: mm 5.0±0.2 0.7 15.0±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)
|
Original
|
2SB1361
|
PDF
|
2SB1361
Abstract: 2SD2052
Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage
|
Original
|
2SD2052
2SB1361
2SB1361
2SD2052
|
PDF
|
2SB1361
Abstract: No abstract text available
Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.7 15.0±0.3 • Features Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
|
Original
|
2SB1361
2SB1361
|
PDF
|
|
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
PDF
|
A 933 S transistors
Abstract: 2SB1361 2SD2052 IS020
Text: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features Unit *. mm 5.2max. ' / 3.2 , 15.5max. , 6.9min. • V ery good lin earity o f DC c u r re n t gain hKF
|
OCR Scan
|
2SD2052
2SB1361
tc-25
A 933 S transistors
2SB1361
2SD2052
IS020
|
PDF
|
294a
Abstract: 2SB1361 2SD2052
Text: Power T ransistors 2SB1361 2SB1361 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • V ery good linearity o f DC current gain I i f e • W ide area o f sa fety operation (ASO)
|
OCR Scan
|
2SB1361
2SD2052
bT32fl52
294a
2SB1361
2SD2052
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features ro 4 - - Unit *. mm 5.2max. Ì/3 .2 6 . 9 m in . S r - Z L - k • V ery good linearity of DC c u rre n t gain hpF
|
OCR Scan
|
2SD2052
2SB1361
SD2052
bT326S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SB1361 Power T ransistors 2SB1361 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 Unit : mn 5 2max. 1/3.2 15.5max. • Features 6.9min. • V ery good linearity of DC c u rre n t gain I i f e
|
OCR Scan
|
2SB1361
2SD2052
01b2tÃ
|
PDF
|
2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
|
OCR Scan
|
2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
|
PDF
|
2SB816
Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3
|
OCR Scan
|
2SA1253
2SB849
2SB775
2SA1264
2SB965
2SB1371
2SA1264
2SB1372
2SB816
2SA1265
2SB1212
2SB921
2SB873
2SA1120
2SB1085B
2sb 989
2SB941
2SC4341
2SB1416
|
PDF
|
b 817
Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Text: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818
|
OCR Scan
|
2SA1703
2SB909M
2SA1705
2SB1044M
2SB1214
2SA1194
2SB1272
2SB76500
2SB1119
b 817
toshiba 2SB755
B817
2SB755
2SB897
2SB927
2SA1213
2SB1272
2sb789a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
|
OCR Scan
|
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SA1185
2SB1054/2SD1485
2SB1421
2SD1457
2SD1457A
2SB1252/2SD1892
2SB1502/2SD2275
|
PDF
|
transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
|
OCR Scan
|
N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
|
PDF
|
