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    2SC2783 Search Results

    2SC2783 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2783 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2783 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2783 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2783 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2783 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC2783 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2783 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2783 Unknown Scan PDF
    2SC2783 Toshiba TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) Scan PDF

    2SC2783 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC2783 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)36 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC2783

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    FET K161

    Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
    Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509

    2SC2783

    Abstract: 2SC520A 2SC1001 2SC998 2SC2782 2SC2641 2SC1815 DATASHEET 10ID 2SC1165 2SC1815
    Text: [8] 6. 低周波増幅回路 6.1 RC 結合増幅回路 2SC1815 2SC1815 8 kΩ VCC = 12 V 4 kΩ 56 kΩ 47 kΩ 5 µF 19 kΩ 200 µF 12 kΩ 50 Ω 500 µF 12 kΩ 5 µF 3 µF 3 µF 1.2 kΩ 電圧利得 48dB f = 8 Hz~2 MHz RG = 1 kΩ 負帰還 15dB RL


    Original     		PDF 2SC1815 2SC278 2SC2783 2SC520A 2SC1001 2SC998 2SC2782 2SC2641 2SC1815 DATASHEET 10ID 2SC1165 2SC1815

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 3 UHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 40W Min. (f= 470MHz, VCC = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC2783 470MHz, 2-13C1A

    2SC2783

    Abstract: uhf 13W amplifier
    Text: 2SC2783 T O S H IB A T O SH IB A TR A N SISTO R SILICO N NPN E P ITA X IA L P LA N A R TY P E 2SC2783 UHF BAN D PO W ER A M PLIFIER A P P LICA TIO N S • O utput Power : Po = 40W M in. (f= 470M Hz, V c c = 12-5V, Pi = 13W) U n it in m m 18.4±Q5 M AXIM UM RATIN G S (Tc = 25°C)


    OCR Scan     		PDF 2SC2783 470MHz. 2-13C1A 470MHz 961001EAA2' 2SC2783 uhf 13W amplifier

    150 j47

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 16.4 i 0.5 FEATURES : . Output Power : Po=40W Min. (f=470MHz, VCC=12.5V, Pi=13W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=12.5V, Pi=13W, f=470MHz


    OCR Scan     		PDF 2SC2783 470MHz, 470MHz 470tlHz, 47DMHz 150 j47

    2SC2783

    Abstract: VC-80 Series uhf 13W amplifier
    Text: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 UHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm 1R4±Q5 Output Power : Po = 40W Min. (f = 470MHz, V e e = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL


    OCR Scan     		PDF 2SC2783 470MHz, 2-13C1A 470MHz 961001EAA2' 2SC2783 VC-80 Series uhf 13W amplifier

    2sc2783

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. ia4±a5 Output Power : Po = 40W Min. (f=470MHz, V cc = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC2783 470MHz, 2-13C1A 961001EAA2' 2sc2783

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    S1854

    Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
    Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686


    OCR Scan     		PDF 2SA473 2SB553 2SA656A 2SB554 2SA657A 2SB595 2SA658A 2SB596 2SA739 2SB673 S1854 s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2sc2805

    Abstract: 2SC2819H 2SA1174 2SC2811 2SC2808 2SC2810 2SC2800 251C 2SC2776 2SC2778
    Text: - 134 - n Ta=25°Ot *EPÍáTc=25'C m s ít £ ffl 335 VcBO Vc e o lc(DC) Pc Pc* I cbo ViitaA/ (V) (V) (A) (W) (W) (/¿A) 2SC2776 ByL VHF A/MIX/OSC 30 20 0. 03 0.1 2SC2778 fâT HF A 30 20 0.03 0.2 2SC2780 am LF A 140 140 0.05 2 36 16 20 220 2SC2782 175MHz PA


    OCR Scan     		PDF 2SC2776 2SC2778 2SC2780 2SC2782 175MHz 2SC2783 470MHz 2SC2784 2SC2785 2SC2786 2sc2805 2SC2819H 2SA1174 2SC2811 2SC2808 2SC2810 2SC2800 251C

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G