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    2SC210 Datasheets (118)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC210 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC210 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC210 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC210 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC210 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC210 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC210 Unknown Cross Reference Datasheet Scan PDF
    2SC2100 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC2100 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2100 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2100 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2100 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2100 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2100 Toshiba Japanese Transistor Data Book Scan PDF
    2SC2100 Toshiba Silicon NPN Epitaxial Planar Transistor Scan PDF
    2SC2101 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC2101 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2101 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2101 Unknown Transistor Substitution Data Book 1993 Scan PDF

    2SC210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC2104 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)7.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC2104

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original     		PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470

    2SC288A

    Abstract: 2SC202 2sc281 2SC233 2SC274 2SC273 2sc257 2SC219 2SC225 2sc246
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SC201 20 300 650 2SC202 80 300 650 2SC203 40 200 350 2SC204 30 5 200 350 2SC205 80 200 350 2SC206 20 2 25 200 2SC207 20 3 25 200 2SC208 20 3 25 200 2SC209 20 3 25 200 2SC210


    Original     		PDF 2SC201 2SC202 2SC203 2SC204 2SC205 2SC206 2SC207 2SC208 2SC209 2SC210 2SC288A 2SC202 2sc281 2SC233 2SC274 2SC273 2sc257 2SC219 2SC225 2sc246

    Untitled

    Abstract: No abstract text available
    Text: 2SC2105 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)1.4 Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC2105

    Untitled

    Abstract: No abstract text available
    Text: 2SC2101 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)35 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC2101 Freq400M

    2SC635

    Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
    Text: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original     		PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC635 MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051

    2SC2897

    Abstract: 2SC3660A SD1477 2SC2890 2SC2891 nec 2sc3660A 2sc635 2SC1804 2sc573 sd2900
    Text: June 1999 ST CROSS REFERENCE WITH NEC INDUSTRY PART NUMBER 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 2SC2628 2SC2629


    Original     		PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC2897 2SC3660A SD1477 2SC2890 2SC2891 nec 2sc3660A 2sc635 2SC1804 2sc573 sd2900

    P104W

    Abstract: 2SC2104
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2104 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, P1=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VcC=15V, Pi=0.4W, f=470MHz


    OCR Scan     		PDF 2SC2104 470MHz, 470MHz 470MHz P104W 2SC2104

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE /O PT O} 9097250 TOSHIBA St. DE 1 ^ 7 5 5 0 56C 0 7 4 8 0 QOD74ñO h f- 2SC2102 C D IS C R E T E / O P T O SILICON NPN EPITA X IA L PLANAR TYPE _ Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=.l5W Min.)


    OCR Scan     		PDF QOD74Ã 2SC2102 175MHz, 175MHz 01/iF

    2SC1260

    Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
    Text: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930


    OCR Scan     		PDF 2SC2102 2SC2888 2SC2990 2SC2094 2SC1260 2SC930 2SC380 2SC923 2SC1345 2SC2021 2SC1260 2SC1815 2sc1424 2SC944 2SC2094 2SC1681 2SC2021 2SC1345

    Untitled

    Abstract: No abstract text available
    Text: Y Ó S H I b X^CDISCRETE/OPTO} 9097250 TOSHIBA Sb DlfJ^QTPESD DOD74ÖS D J~~ b 6C 07482 DISCRETE/OPTO D T - 3 3 - ; ; 2SC2103A SILICON NPN E PIT A X IA L PLANAR TYPE Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power Po=27W (Min.)


    OCR Scan     		PDF DOD74Ã 2SC2103A 175MHz, 175MHz 01/iF 10/iF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA iDISCRETE/OPTOJ 9097250 TOSHIBA Sb <DISCRETE/OPTO DE j'ìO'ìVBSD 0 0 0 7 4 7 0 ñ 5ò C oy^- 3 3 - 0 7 0747à 2SC2101 SILIC O N NPN E P IT A X IA L PLANAR TYPE ” Unit in mra VHF BAND POWER AMPLIFIER APPLICATIONS . FEATURES : Output Power : Po=6W Min.)


    OCR Scan     		PDF 2SC2101 175MHz, 01/iF

    2sc2915 hitachi

    Abstract: 2Sc515a 2SC2611 2SC1515 2SC2181 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762
    Text: 116 - a m. £ Type No. 2SC 1490 t h□— ^ 2SC 1491 i h□ — =7 2SC2102 2SC2102 2SC 2SC 2SC 2SC ¿01/ 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC ^ h□— •=£ h□ — 2SC2103 2SC2181 2SC2282 2SC3008-KA 2SC2917 2SC2181 2SC1165 2SC2917 2SC2762 2SC 1514


    OCR Scan     		PDF 2SC2102 2SC2281 2SC2282 2SC2103 2SC3008-KA 2SC2181 2SC2917 2sc2915 hitachi 2Sc515a 2SC2611 2SC1515 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762

    2SC2101

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2101 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power Po=6W Min. ( f=l75MHz, VCC=12.5V, Pi=0.5W ) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO Collector-Emitter Voltage


    OCR Scan     		PDF 2SC2101 l75MHz, 175MHz 2SC2101

    2SC2107

    Abstract: NT101 2SA956
    Text: 2SC2107 General Purpose Amplifier and Switches NPN Silicon Epitaxial Transistor Industrial Use • Complementary to 2SA956 • Keeps stabilized operation against power voltage fluctuation: PACKAGE DIMENSIONS in m illim eters inches V CEO > 40V, V EB0 > 8.0V


    OCR Scan     		PDF 2SC2107 2SA956 150TYP. 2SC2107 NT101 2SA956

    2SC 143 SANYO

    Abstract: nec 2651 2SC2283 2sc2317 2SC2570A 2SC1730 2sc2644 2SC2389 2SC2101 2SC2627
    Text: - m % tt € Manuf. Type No. & H. SANYO 2SC 2627 / ~ 2SC 2828 " 2SC 2629 *<-• » M. Q TOSHIBA NEC 2SC2101 2SC2281 2SC2102 2SC2282 i HITACHI Sä ± il FUJITSU fé T MATSUSHITA z m MITSUBISHI * 2SC2420 2SC 2630 ^ H m 2SC2782 2SC 263 1 ta T 2SC2909 2SC 2632


    OCR Scan     		PDF 2SC2101 2SC2281 2SC2102 2SC2282 2SC2420 2SC2782 2SC2917 2SC2909 2SC3478 2SC2389 2SC 143 SANYO nec 2651 2SC2283 2sc2317 2SC2570A 2SC1730 2sc2644 2SC2389 2SC2627

    2SC2105

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2105 Unit in nan UHF BAND POWER AMPLIFIER APPLICATIONS. w « V l g> FEATURES : -H 'Si. r vi L) « . Output Power : P0=6W Min.) (f=470MHz, V Cc=12.6V, P i=lW) XF) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR


    OCR Scan     		PDF 2SC2105 470MHz, 470MHz 470MHz -15pF CC-12 2SC2105

    2SC2102

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2102 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : P o=15W Min. ( f=175MHz, VCC=12.5V, Pi=1.3W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30;1 V SWR @ Vcc=15V, Pi=1.3W,


    OCR Scan     		PDF 2SC2102 175MHz, 175MHz 2-10G1A 175MHz 2SC2102

    tv lg

    Abstract: 2SC2103A CC125 2SC2103
    Text: 2SC2103A SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=27W Min. (f=175MHz, VCC=12.5V, Pi=4.2W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=14.5V, Pi=4W, f=175MHz


    OCR Scan     		PDF 2SC2103A 175MHz, 175MHz 10//F tv lg 2SC2103A CC125 2SC2103

    IC 7479

    Abstract: ot 409 2SC2101 2SC210 opto i
    Text: TOSHIBA {DISCRETE /OPT O} "St DE I T0T7ESD □DD747ä Ö 1 9097250 TOSHIBA ^ — 2SC2101 " CD I S C R E T E /O P T O 5òC SILICON NPN EPITA XIA L PLANAR TYPE_ 07476 33-07 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS . FEATURES . : Output Power :


    OCR Scan     		PDF DD747A 2SC2101 175MHz, 175MHz IC 7479 ot 409 2SC2101 2SC210 opto i

    2SC2103A

    Abstract: 10ID
    Text: T oshiba -c d i s c k e T e / o p t o } 90 97250 TOSHIBA Sb DE I ^ O T V a S D 36C <D I S C R E T E / O P T O 07482 OOD74flE D T - 3 □ 3 - ; ; 2SC2103A S ILICON NPN EPITA XIA L PLANAR TYPE_ Unit in mm VHF BAND POWER A M PL IFIE R A P PLICAT IO N S.


    OCR Scan     		PDF OOD74Ã 2SC2103A 175MHz, 175MHz l75MHz 10ID

    2SC2106

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2106 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONSFEATURES : . Output Power : P0=12W Min. (f=470MHz, VCC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pi=3W, f=470MHz


    OCR Scan     		PDF 2SC2106 470MHz, 470MHz 470MHz 2SC2106

    2sa956

    Abstract: 2SC2107 transistor h6
    Text: 2SA956 General Purpose Amplifier and Sw itches PNP Silicon Epitaxial Transistor • Complementary to 2SC2107. PACKAGE DIMENSIONS • Keeps stabilized operation against power voltage fluctuation: in m illim eters inches V CEO > — 40V, V ebq > — 8.0V • High DC Current Gain and excellent linearity:


    OCR Scan     		PDF 2SA956 2SC2107. 160TY 2sa956 2SC2107 transistor h6

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1