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    2SC573 Search Results

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    2SC573 Price and Stock

    Panasonic Electronic Components 2SC57390P

    TRANS NPN 60V 3A TO220D-A1
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    ROHM Semiconductor 2SC5732TLQ

    TRANS NPN 30V 5A CPT3
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    DigiKey 2SC5732TLQ Reel 2,500
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    ROHM Semiconductor 2SC5731T100R

    TRANS NPN 30V 2A MPT3
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    ROHM Semiconductor 2SC5731T100Q

    TRANS NPN 30V 2A MPT3
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    DigiKey 2SC5731T100Q Reel 1,000
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    ROHM Semiconductor 2SC5734KT146Q

    ELECTRONIC COMPONENT
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    Quest Components 2SC5734KT146Q 4,330
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    Find more 2SC573 price and stock on Findchips.com

    2SC573 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC573 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC573 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC573 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC573 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC573 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC573 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC573 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC573 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC573 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC573 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC573 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC573 Unknown Transistor Replacements Scan PDF
    2SC5730 ROHM Medium power transistor (30V, 1.0A) Original PDF
    2SC5730K ROHM Medium power transistor (30V, 1A) Original PDF
    2SC5730KT146Q ROHM Medium Power Transistor (30 V, 1 A) Original PDF
    2SC5730KT146R ROHM Medium Power Transistor (30 V, 1 A) Original PDF
    2SC5730TLQ ROHM Medium Power Transistor (30 V, 1.0 A) Original PDF
    2SC5730TLQ ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 1A TSMT3 'Q' Original PDF
    2SC5730TLR ROHM Medium Power Transistor (30 V, 1.0 A) Original PDF
    2SC5730TLR ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 1A TSMT3 'R' Original PDF

    2SC573 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5676

    Abstract: 2SC5737 MARKING VT
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA859TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5676) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA859TD 2SC5737, 2SC5676) S21e2 2SC5737 2SC5676 PA859TD-T3 2SC5676 2SC5737 MARKING VT

    2SC5600

    Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA858TD 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 PA858TD-T3 2SC5600 2SC5737 IC 14558 IC 2801 UPA858TD-T3

    k 2059 TRANSISTOR

    Abstract: UPA850TD 2SC5435 2SC5736 marking VF
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA850TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5736) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA850TD 2SC5435, 2SC5736) S21e2 2SC5435 2SC5736 k 2059 TRANSISTOR UPA850TD 2SC5435 2SC5736 marking VF

    2SC5739

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5739 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3


    Original     		PDF 2002/95/EC) 2SC5739 2SC5739

    Untitled

    Abstract: No abstract text available
    Text: 2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original     		PDF 2SC5738

    2SC5738

    Abstract: No abstract text available
    Text: 2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original     		PDF 2SC5738 2SC5738

    2SC5738

    Abstract: No abstract text available
    Text: 2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original     		PDF 2SC5738 2SC5738

    marking 2w

    Abstract: 2SC5600 2SC5737
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5737, 2SC5600)


    Original     		PDF PA858TC 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 marking 2w 2SC5600 2SC5737

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5739 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3


    Original     		PDF 2002/95/EC) 2SC5739 O-220D

    Untitled

    Abstract: No abstract text available
    Text: 2SC5738 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5738 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.15 V (最大)


    Original     		PDF 2SC5738

    a406 rf npn

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA855TD 2SC5737, 2SC5745) 2SC5737 2SC5745 PA855TD1 PU10098EJ01V0DS a406 rf npn

    Untitled

    Abstract: No abstract text available
    Text: 2SC5738 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5738 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original     		PDF 2SC5738

    IC-420

    Abstract: No abstract text available
    Text: 2SC5738 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5738 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original     		PDF 2SC5738 IC-420

    2SA2048

    Abstract: 2SC5730
    Text: 2SC5730 Transistor Medium power transistor 30V, 1.0A 2SC5730 !External dimensions (Units : mm) TSMT3 0.4 (1) (3) 1.9 0.3 0.6 0.85 1.0MAX 0.1 (1) Base (2) Emitter (3) Collector 0.7 0.16 (2) 0.95 0.95 2.8 1.6 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A)


    Original     		PDF 2SC5730 150mV 500mA, 2SA2048 2SA2048 2SC5730

    2SC5738

    Abstract: No abstract text available
    Text: 2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original     		PDF 2SC5738 2SC5738

    2SC5736

    Abstract: 2SC5737 5609 npn transistor marking 2M
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA851TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor


    Original     		PDF PA851TC 2SC5737, 2SC5736) S21e2 2SC5737 2SC5736 2SC5736 2SC5737 5609 npn transistor marking 2M

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5738 Package Name: TSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


    Original     		PDF 2SC5738

    2SC5737

    Abstract: 2SC5745
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA855TD 2SC5737, 2SC5745) S21e2 2SC5737 2SC5745 PA855TD-T3 2SC5737 2SC5745

    nec 14308

    Abstract: 2SC5736 2FB100 2SC5736-T1 c 2579 power transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5736 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5736 2SC5736-T1 nec 14308 2SC5736 2FB100 2SC5736-T1 c 2579 power transistor

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5739 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3


    Original     		PDF 2002/95/EC) 2SC5739 O-220D

    Untitled

    Abstract: No abstract text available
    Text: 2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)


    Original     		PDF 2SC5738

    2SC5739

    Abstract: 2SA2057 2SA20 transistor 3005 2
    Text: New 60V• 3A NPN /PNP High-speed Switching Power Transistor ! Overview Unit : mm Switching speed of new type power transistor 2SA2057, 2SC5739 is improved compared to current ones by more than 50 %. Collector 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 to Emitter Saturation Voltage ; VCE(sat) is also 40 % improved.


    Original     		PDF 2SA2057, 2SC5739) O-220D 2SC5739 2SC5739 2SA2057 2SA20 transistor 3005 2

    2SC5737

    Abstract: 2SC5737-T1 nec 2501 852 c 5929 transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5737 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for VCO applications • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5737 2SC5737-T1 2SC5737 2SC5737-T1 nec 2501 852 c 5929 transistor

    2SC5734K

    Abstract: 2sc5917 2SC5734 2SA2054
    Text: Excellence in Electronics 2005 Ver.1 T ransistor New Products Pari No. B V ceo lc Ip N PN M [A] [A] 2SA2048K 2SC5730K 30 1 2 2SA2054K 2SC5734K 90 0.5 1 Package SMT3 ^ Pc=0.2W " PNP Pari No. Package TSMT3 Pc=0.5W * W Package ATV P c=1W J L 'V BV ceo [V] hF:


    OCR Scan     		PDF 2SA2048K 2SA2054K 2SC5730K 2SC5734K 2SA2048 2SA2113 2SA2134 2SA2090 2SC5916 2SC5984* 2SC5734K 2sc5917 2SC5734 2SA2054