2SB944
Abstract: 2SD1269
Text: JMnic Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications PINNING PIN
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2SB944
O-220Fa
2SD1269
O-220Fa)
-100V;
10MHz
2SB944
2SD1269
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2SB0944
Abstract: 2SB944 2SD1269
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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2002/95/EC)
2SB0944
2SB944)
2SD1269
SC-67
O-220F-A1
2SB0944
2SB944
2SD1269
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2SB0944
Abstract: 2SB944 2SD1269
Text: Power Transistors 2SB0944 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Unit: mm ● • 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage
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2SB0944
2SB944)
2SD1269
2SB0944
2SB944
2SD1269
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130
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Original
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2002/95/EC)
2SB0944
2SB944)
2SD1269
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PDF
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2SB0944
Abstract: 2SB944 2SD1269
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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Original
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2002/95/EC)
2SB0944
2SB944)
2SD1269
SC-67
O-220F-A1
2SB0944
2SB944
2SD1269
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PDF
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2SD1269
Abstract: 2SB0944 2SB944
Text: Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 2SB944 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage
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2SD1269
2SB0944
2SB944)
54nductor
2SD1269
2SB0944
2SB944
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PDF
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2SB944
Abstract: 2SD1269
Text: Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB944 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage
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Original
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2SD1269
2SB944
2SB944
2SD1269
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 14.0±0.5 Parameter Symbol
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Original
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2002/95/EC)
2SB0944
2SB944)
2SD1269
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0944 (2SB944) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130
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Original
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2002/95/EC)
2SB0944
2SB944)
2SD1269
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PDF
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2SB944
Abstract: 2SD1269
Text: Power Transistors 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage
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2SB944
2SD1269
100mA
2SB944
2SD1269
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2SB944
Abstract: 2SD1269
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB944 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V (Min) ·Good Linearity of hFE ·Complement to Type 2SD1269
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2SB944
2SD1269
-100V;
10MHz
2SB944
2SD1269
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2SB944
Abstract: 2SD1269
Text: SavantIC Semiconductor Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Large collector current IC ·Low collector saturation voltage ·Complement to type 2SD1269 APPLICATIONS ·For power switching applications
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2SB944
O-220Fa
2SD1269
O-220Fa)
-100V;
10MHz
2SB944
2SD1269
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PDF
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2SB944
Abstract: 2SD1269
Text: Inchange Semiconductor Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications
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Original
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2SB944
O-220Fa
2SD1269
O-220Fa)
10MHz
2SB944
2SD1269
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PDF
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2SB0944
Abstract: 2SB944 2SD1269
Text: Power Transistors 2SB0944 2SB944 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)
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2SB0944
2SB944)
2SD1269
2SB0944
2SB944
2SD1269
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2S D Ì269 2SD1269 Silicon NPN Epitaxial Planar Type • P a ck a ge D im ension s Unit ! mm 4.4max. 10.2max. P o w e r S w itch ing C o m p le m e n ta ry P a ir with 2SB944 5.7max. ■ F e a tu re s • • • • 2.9max. Low collector-emitter saturation voltage V ce (»>«
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OCR Scan
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2SD1269
2SB944
pow-180
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SB944 Pow er Transistors 2SB944 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1269 •Features • • • • Unit ! mm 4.4max. 2.9max J0.2max. 5.7tnax. Low collector-emitter saturation voltage VcEisa»
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OCR Scan
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2SB944
2SB944
2SD1269
10OXlOOX2mm
2SB942/A)
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PDF
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2SB944
Abstract: 2SD1269 panasonic 2SB Scans-001554
Text: Power Transistors 2SB944 2SB944 Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S D 1 2 6 9 U n it mm 4 .4 m a x . 1 0 .2 m a x . • Features 2.9 max, • Low co llector-em itter saturation voltage VcEisao
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OCR Scan
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2SB944
2SD1269
cb100xi00x2m
2SB942/A)
2SB944
2SD1269
panasonic 2SB
Scans-001554
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2SD1539
Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5
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OCR Scan
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O-126
O-202
T0-220
O-220F
2SA1605
2SC2258
2SC3063
2SC2923
2SC4714
2SC3942
2SD1539
d53 pnp transistor
2sa137
2sb1071
2SA1375
2SA1605
2SA1817
2SC2258
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2SD1267
Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Text: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290
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OCR Scan
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2SD1267
2SD1267A
2SD1268
2SD1270
2SD1271
2SD1271A
2SD1272
2SD1279
SC-62
2SD1280
2SD1267
2SD1267A
2SD1271
2SD1273
2SD1273A
2SD1274
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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OCR Scan
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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PDF
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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OCR Scan
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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DARLINGTON TRANSISTOR ARRAYS pu1501
Abstract: 2SD1273 PU3146 PU4128 apu4148
Text: Transistors Selection Guide by Applications and Functions I Power Transistor Arrays Series Name Equivalent Circuit Packaqe (No.) Equivalent Circuit Structure Application General Exam ple(N PN ) PU3000 Series PUA3000 Series PU4000 Series 8 Pin •SIL Packaqe (D72) (D73)
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OCR Scan
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PU3000
PUA3000
PU4110
PU4111
PU4112
PU4113
PU4114
PU4210
PU4211
PU4212
DARLINGTON TRANSISTOR ARRAYS pu1501
2SD1273
PU3146
PU4128
apu4148
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PDF
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A1534
Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin
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OCR Scan
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T0-92
T092L:
T0220F
T0220
T092NL
A1534
T092
2SB642
T092L
2SB0774
SS-Mini 3
2SA1495
2SB946
2SA1124
A1534A
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