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    Panasonic Electronic Components 2SD12800RL

    TRANS NPN 20V 1A MINIP3-F1
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    2SD1280 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD1280 Kexin Silicon NPN Epitaxial Planar Type Original PDF
    2SD1280 Panasonic NPN Transistor Original PDF
    2SD1280 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1280 TY Semiconductor Silicon NPN Epitaxial Planar Type - SOT-89 Original PDF
    2SD1280 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1280 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1280 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1280 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD12800RL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 20VCEO 1A MINI PWR Original PDF
    2SD12800SL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 20VCEO 1A MINI PWR Original PDF
    2SD1280RR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD1280RS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SD1280 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SD1280 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SD1280

    2SD1280

    Abstract: No abstract text available
    Text: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 ● 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the


    Original     		PDF 2SD1280 2SD1280

    2SB0956

    Abstract: 2SD1280
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Rating Unit VCBO −20 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SB0956 2SD1280 2SB0956 2SD1280

    2SB0956

    Abstract: 2SB956 2SD1280
    Text: Transistor 2SB0956 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm 4.5±0.1 1.6±0.2 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SB0956 2SB956) 2SD1280 2SB0956 2SB956 2SD1280

    2SD1280

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain


    Original     		PDF 2002/95/EC) 2SD1280 2SD1280

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25


    Original     		PDF 2002/95/EC) 2SD1280

    2SB0956

    Abstract: 2SD1280
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Unit −20 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SB0956 2SD1280 2SB0956 2SD1280

    2SD1280G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SD1280G 2SD1280G

    2SB0956G

    Abstract: 2SD1280G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1280G ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SB0956G 2SD1280G 2SB0956G 2SD1280G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1280G • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SB0956G 2SD1280G

    2SD1280

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1280 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Symbol Rating


    Original     		PDF 2SD1280 2SD1280

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.


    Original     		PDF 2002/95/EC) 2SD1280G

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 ● 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the


    Original     		PDF 2SD1280

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SB0956 2SB956 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1280 Unit: mm 4.5±0.1 1.6±0.2 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO


    Original     		PDF 2SB0956 2SB956) 2SD1280

    2SD1280G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.


    Original     		PDF 2002/95/EC) 2SD1280G 2SD1280G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des


    Original     		PDF 2002/95/EC) 2SD1280

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 1.5±0.1 Parameter Symbol Rating Unit VCBO −20


    Original     		PDF 2002/95/EC) 2SB0956 2SD1280

    2SD1280

    Abstract: No abstract text available
    Text: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the


    Original     		PDF 2SD1280 2SD1280

    2SD1280

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ ue


    Original     		PDF 2002/95/EC) 2SD1280 2SD1280

    IC 4020

    Abstract: 2SB956 2SD1280 DSA003717
    Text: Transistor 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm • Absolute Maximum Ratings * +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Large collector power dissipation PC. Low collector to emitter saturation voltage VCE sat .


    Original     		PDF 2SB956 2SD1280 IC 4020 2SB956 2SD1280 DSA003717

    2SB0956

    Abstract: 2SB956 2SD1280
    Text: Transistor 2SB0956 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm • Absolute Maximum Ratings * 0.5±0.08 1.5±0.1 (Ta=25˚C) +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Large collector power dissipation PC.


    Original     		PDF 2SB0956 2SB956) 2SD1280 2SB0956 2SB956 2SD1280

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.


    Original     		PDF 2002/95/EC) 2SD1280G

    2SD1280

    Abstract: No abstract text available
    Text: Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE sat


    Original     		PDF 2SD1280 2SD1280

    2SD1267

    Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
    Text: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290


    OCR Scan     		PDF 2SD1267 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1279 SC-62 2SD1280 2SD1267 2SD1267A 2SD1271 2SD1273 2SD1273A 2SD1274