Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB908 Search Results

    SF Impression Pixel

    2SB908 Price and Stock

    Toshiba America Electronic Components 2SB908-TE16L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SB908-TE16L 10,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    2SB908 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB908 Toshiba Silicon PNP-darlington-tranistor+diode Original PDF
    2SB908 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB908 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB908 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB908 Unknown Scan PDF
    2SB908 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB908 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB908 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB908 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB908 Unknown Cross Reference Datasheet Scan PDF
    2SB908 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB908 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB908 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB908 Toshiba TRANS DARLINGTON PNP 80V 4A 3(2-7B1A)|3(2-7B2A) Scan PDF
    2SB908 Toshiba Silicon PNP transistor for switching applications, hammer drive and pulse motor drive applications, power amplifier applications Scan PDF
    2SB908 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS) Scan PDF
    2SB908A Toshiba TRANS DARLINGTON PNP 80V 4A 3(2-7B1A) Scan PDF
    2SB908B Toshiba TRANS DARLINGTON PNP 80V 4A 3(2-7B2A) Scan PDF

    2SB908 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b908

    Abstract: 2SB908 2SD1223 transistor b908
    Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB908 2SD1223 b908 2SB908 2SD1223 transistor b908

    B908

    Abstract: 2SB908 2SD1223
    Text: 2SB908 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SB908 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)


    Original     		PDF 2SB908 2SD1223 20070701-JA B908 2SB908 2SD1223

    b908

    Abstract: 2SD1223 2SB908
    Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) ·


    Original     		PDF 2SB908 2SD1223. b908 2SD1223 2SB908

    transistor b908

    Abstract: b908 2SB908 2SD1223 10MSA
    Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB908 2SD1223 transistor b908 b908 2SB908 2SD1223 10MSA

    b908

    Abstract: No abstract text available
    Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB908 2SD1223 b908

    2SB908

    Abstract: No abstract text available
    Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB908 2SD1223. 2SB908

    B908

    Abstract: No abstract text available
    Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB908 2SD1223 B908

    Untitled

    Abstract: No abstract text available
    Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB908 2SD1223

    B908

    Abstract: 2SB908 2SD1223 B-908
    Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB908 2SD1223 B908 2SB908 2SD1223 B-908

    B908

    Abstract: 2SB908 2SD1223
    Text: 2SB908 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SB908 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)


    Original     		PDF 2SB908 2SD1223 B908 2SB908 2SD1223

    D1223

    Abstract: 2SD1223 a4503 2SB908
    Text: 2SD1223 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SD1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908 20070701-JA D1223 2SD1223 a4503 2SB908

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    D1223

    Abstract: 2SB908 2SD1223
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908. D1223 2SB908 2SD1223

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SB908 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : hFE l =2000(Min.) (VCE=-2V, IC=-1A) . Low Saturation Voltage : ^CE(sat)“-1•^(Max.) (IC=-3A)


    OCR Scan     		PDF 2SB908 2SD1223. 13ASE

    Q6015

    Abstract: Q6015 equivalent TED 06-10-15
    Text: TOSHIBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 U n it in mm SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX PO W ER AM PLIFIER APPLICATIONS (A) 0.6MAX. 5.2 ±0.2 IN O • H ig h D C C urrent G ain


    OCR Scan     		PDF 2SB908 2SD1223. Q6015 Q6015 equivalent TED 06-10-15

    2SB908

    Abstract: 2SD1223
    Text: TO SH IBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)


    OCR Scan     		PDF 2SB908 2SD1223. 2SB908 2SD1223

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB908 U nit in mm SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. POW ER AMPLIFIER APPLICATIONS. • • • I High DC Current Gain : h F E ( l ) = 2000(M in.)(V cE =—2V, Ic = - 1 A )


    OCR Scan     		PDF -2SB908 2SD1223. 15OLLECTOR-EMITTER 2SB908

    2SB908

    Abstract: 2SD1223
    Text: TOSHIBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)


    OCR Scan     		PDF 2SB908 2SD1223. 2SB908 2SD1223

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 Unit in mm SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE (i) = 2000 (Min.) (VCE = - 2 V, IC = - 1 A)


    OCR Scan     		PDF 2SB908 2SD1223.

    2SB908

    Abstract: 2SD1223
    Text: TO SH IBA 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = —2 V, IC = —1 A)


    OCR Scan     		PDF 2SB908 2SD1223. 2SB908 2SD1223

    2SB908

    Abstract: No abstract text available
    Text: T O SH IB A 2SB908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB908 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm • High DC Current Gain : hF E (l) = 2000 (Min.) (VCE = -2 V , IC = - 1 A )


    OCR Scan     		PDF 2SB908 2SD1223. 50X50 2SB908

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346