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    2SB595 Price and Stock

    Toshiba America Electronic Components 2SB595

    POWER BIPOLAR TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB595 104
    • 1 $8.43
    • 10 $4.215
    • 100 $3.653
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    2SB595 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB595 Micro Commercial Components PNP Silicon Power Transistor Original PDF
    2SB595 Wing Shing Computer Components LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) Original PDF
    2SB595 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB595 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB595 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB595 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB595 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB595 Unknown Cross Reference Datasheet Scan PDF
    2SB595 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB595 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB595 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB595 Unknown Transistor Replacements Scan PDF
    2SB595 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB595 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB595 Unknown Scan PDF
    2SB595 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB595 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB595 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB595 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB595 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SB595 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SB595 Features • • PNP Silicon Power Transistors With TO-220 package Power Amplifier applications Maximum Ratings Symbol V CEO V CBO


    Original     		PDF 2SB595 O-220 O-220

    ce50a

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD525 Features • • • • • Silicon NPN triple diffused type High breakdown voltage Low Collector saturation voltage Complementary to 2SB595


    Original     		PDF 2SD525 2SB595 O-220 ce50a

    2SD525

    Abstract: 2SB595
    Text: SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ·Power amplifier applications


    Original     		PDF 2SD525 O-220C 2SB595 2SD525 2SB595

    2SD525

    Abstract: 2SB595 NIC Components 2SD525
    Text: Product Specification www.jmnic.com 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ・Power amplifier applications


    Original     		PDF 2SD525 O-220C 2SB595 2SD525 2SB595 NIC Components 2SD525

    2SB595

    Abstract: 2SD525 transistor 2sd525
    Text: 2SB595 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD525 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SB595 O-220 2SD525 -100V 2SB595 2SD525 transistor 2sd525

    2SB595

    Abstract: 2SD525
    Text: 2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SD525 O-220 2SB595 2SB595 2SD525

    2sb595

    Abstract: 2SD525 100v pnp to220c
    Text: SavantIC Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD525 ·High breakdown voltage :VCEO=-100V ·Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS ·Power amplifier applications


    Original     		PDF 2SB595 O-220C 2SD525 -100V -100V; 2sb595 2SD525 100v pnp to220c

    2SD525

    Abstract: 2SB595
    Text: Inchange Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS


    Original     		PDF 2SD525 O-220C 2SB595 2SD525 2SB595

    2SB595

    Abstract: transistor 2SB595 transistor 2sd525 2SD525
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB595 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Complement to Type 2SD525


    Original     		PDF 2SB595 -100V 2SD525 -100V; 2SB595 transistor 2SB595 transistor 2sd525 2SD525

    2SB595

    Abstract: 2SD525
    Text: Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS


    Original     		PDF 2SB595 O-220C 2SD525 -100V 2SB595 2SD525

    2SB595

    Abstract: 2SD525
    Text: JMnic Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS ・Power amplifier applications


    Original     		PDF 2SB595 O-220C 2SD525 -100V -100V; 2SB595 2SD525

    2SD525

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio


    OCR Scan     		PDF 2SD525 2SB595. 2SD525

    2sb595

    Abstract: 2sb595o 2SB595-O transistor 2sd525
    Text: 2SB595 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 POWER AMPLIFIER APPLICATIONS. U nit in mm • High Breakdown Voltage : V^EO = —100V • Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) • Complementary to 2SD525.


    OCR Scan     		PDF 2SB595 --100V 2SD525. 2sb595 2sb595o 2SB595-O transistor 2sd525

    transistor 2sd525

    Abstract: 2SD525
    Text: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. ¿ 3.6 ±0.2 High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : Vce ( s a t ) “ 2.0V (Max.) Complementary to 2SB595.


    OCR Scan     		PDF 2SD525 2SB595. transistor 2sd525 2SD525

    2SB595

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB595 Unit in mm 10.3 MAX. 03.6ÍO.2 POWER AMPLIFIER APPLICATIONS. FEATURES: • High Breakdown Voltage : V^gQ-100V • Low Collector-Emitter Saturation Voltage : VcE sat =~2.0V(Max.) • Complementary to 2SD525. 1.5 MAX


    OCR Scan     		PDF 2SB595 gQ--100V 2SD525. 2SB595

    S1854

    Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
    Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686


    OCR Scan     		PDF 2SA473 2SB553 2SA656A 2SB554 2SA657A 2SB595 2SA658A 2SB596 2SA739 2SB673 S1854 s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001

    Nec K 872

    Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
    Text: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634


    OCR Scan     		PDF 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB920 2SB595 2SB703A 2SB942A 2SA1634 Nec K 872 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601

    2SD525

    Abstract: No abstract text available
    Text: 2SD525 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. jZ Í3 .6 ± 0 .2 FEATURES: • High Breakdown Voltage : VCEO=100V ■ Low Collector Saturation Voltage : VCE sat =2.0V(Max.) • Complementary to 2SB595. ■ Recommended for 30W High Fidelity Audio


    OCR Scan     		PDF 2SD525 2SB595. -55VL50 2SD525

    transistor 2sd525

    Abstract: 2SD525 2SB595
    Text: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : V qe (sat) “ 2.0V (Max.) Complementary to 2SB595. Recommend for 30W High Fidelity Audio Frequency Amplifier


    OCR Scan     		PDF 2SD525 2SB595. transistor 2sd525 2SD525 2SB595

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    C3182N

    Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
    Text: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn


    OCR Scan     		PDF 2SA51 2SA57 2SC3281 2SD1571 C3182N C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855

    Untitled

    Abstract: No abstract text available
    Text: T ^ H T B T r r m t R r r E / o H 9097250 TOSHIBA Sh ï o j - D T ^ TEH7250 D007714 S DISCRETE/OPTO> SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. 10.3MAX. 0S.6±:O .Z FEATURES: • High Breakdown Voltage : VCEO=100V • Low Collector Saturation Voltage : VCE(sat =2.0V(Max.)


    OCR Scan     		PDF TEH7250 D007714 2SB595.