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    2SA1611 Search Results

    2SA1611 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1611-T1-A Renesas Electronics Corporation Small Signal Bipolar Transistors, SSP, / Visit Renesas Electronics Corporation
    2SA1611-T2-A Renesas Electronics Corporation Small Signal Bipolar Transistors, SSP, / Visit Renesas Electronics Corporation
    2SA1611(0)-T1-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SA1611(0)-T1-AT Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SA1611(0)-T2-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
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    2SA1611 Price and Stock

    Renesas Electronics Corporation 2SA1611(0)-T2-A

    TRANS PNP 50V 0.1A SC70
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    DigiKey 2SA1611(0)-T2-A Reel
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    Renesas Electronics Corporation 2SA1611(0)-T1-A

    Transistor GP BJT PNP 50V 100mA 3-Pin SC-70 - Bulk (Alt: 2SA1611(0)-T1-A)
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    Avnet Americas 2SA1611(0)-T1-A Bulk 4 Weeks 1,263
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    Rochester Electronics 2SA1611(0)-T1-A 27,000 1
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    NEC Electronics Group 2SA1611M5-T1

    100 MA, 50 V, PNP, SI, SMALL SIGNAL TRANSISTOR
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    Quest Components 2SA1611M5-T1 23,820
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    2SA1611M5-T1 23,820
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    NEC Electronics Group 2SA1611-T1

    100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1611-T1 20,000
    • 1 $1.25
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    2SA1611-T1 11,957
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    NEC Electronics Group 2SA1611T1

    PNP SILICON EPITAXIAL TRANSISTOR FOR AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SA1611T1 1,925
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    Find more 2SA1611 price and stock on Findchips.com

    2SA1611 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1611 Kexin PNP Silicon Epitaxia Original PDF
    2SA1611 NEC Semiconductor Selection Guide 1995 Original PDF
    2SA1611 NEC Semiconductor Selection Guide Original PDF
    2SA1611 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA1611 TY Semiconductor PNP Silicon Epitaxia - SOT-323 Original PDF
    2SA1611 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1611 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1611 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1611 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1611 Unknown PNP transistor Scan PDF
    2SA1611 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1611 NEC AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR Scan PDF
    2SA1611(0)-T2-A Renesas Electronics TRANSISTOR PNP SC70-3 Original PDF
    2SA1611M4 NEC Audio Frequency, General Purpose Amplifier PNP Silicon Epitaxial Transistor Scan PDF
    2SA1611M5 NEC Audio Frequency, General Purpose Amplifier PNP Silicon Epitaxial Transistor Scan PDF
    2SA1611M6 NEC Audio Frequency, General Purpose Amplifier PNP Silicon Epitaxial Transistor Scan PDF
    2SA1611M7 NEC Audio Frequency, General Purpose Amplifier PNP Silicon Epitaxial Transistor Scan PDF
    2SA1611-T1 NEC Silicon Transistor Scan PDF
    2SA1611-T2 NEC Silicon Transistor Scan PDF
    2SA1611W Galaxy Semi-Conductor Holdings PNP Silicon Epitaxial Planar Transistor Original PDF

    2SA1611 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4177

    Abstract: No abstract text available
    Text: 2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES    High DC Current Gain. High Voltage. Complementary to 2SA1611 A L 3 3 C B


    Original     		PDF 2SC4177 OT-323 2SA1611 2SC4177-L4 2SC4177-L5 2SC4177-L6 2SC4177-L7 100mA, 25-Oct-2013 2SC4177

    m7 smd diodes

    Abstract: smd m7 smd marking m5 M7 diodes kexin smd marking m4 m6 smd m7 smd MARKING marking of m7 diodes marking smd m7 2SA1611
    Text: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1611 Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50


    Original     		PDF 2SA1611 -100mA -10mA m7 smd diodes smd m7 smd marking m5 M7 diodes kexin smd marking m4 m6 smd m7 smd MARKING marking of m7 diodes marking smd m7 2SA1611

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification 1. BASE


    Original     		PDF OT-323 2SC4177 2SA1611 100mA,

    2SA1611

    Abstract: 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking
    Text: 2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 A L


    Original     		PDF 2SA1611 OT-323 2SC4177 2SA1611-M4 2SA1611-M6 2SA1611-M7 2SA1611-M5 -100mA, -10mA 2SA1611 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  High Voltage  Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-323 2SA1611 2SC4177 -100mA, -10mA

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1611 Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage


    Original     		PDF 2SA1611 -100mA -10mA

    M7 marking

    Abstract: marking of m7 diodes 2SA1611 marking m5
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR PCM : 0.15 1. 25¡ À0. 05 1. 01 REF Power dissipation W (Tamb=25℃) 0. 30 1. 30¡ À0. 03


    Original     		PDF OT-323 OT-323 2SA1611 -100mA, -10mA M7 marking marking of m7 diodes 2SA1611 marking m5

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC4177 TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification 1. BASE


    Original     		PDF OT-323 2SC4177 2SA1611

    WEJ Electronic

    Abstract: marking M4 marking of m7 diodes 2SA1611 marking m5
    Text: 2SA1611 SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.15 1. 25¡ À0. 05 1. 01 REF 3. COLLECTOR W (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current ICM : -0.1 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range


    Original     		PDF 2SA1611 OT-323 -100mA, -10mA WEJ Electronic marking M4 marking of m7 diodes 2SA1611 marking m5

    surface mounted m6 transistor

    Abstract: sot-323 Marking M6 m6 marking transistor 2SA1611W 2SC4177 pnp transistor 6V marking m5 marking M6 transistor M6 Marking pnp
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES 2SA1611W Pb z High voltage VCEO=-50V. z Excellent HFE Linearity. z High DC current gain : hFE=200 typ. z Complementary to 2SC4177. Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.


    Original     		PDF 2SA1611W 2SC4177. OT-323 BL/SSSTF033 surface mounted m6 transistor sot-323 Marking M6 m6 marking transistor 2SA1611W 2SC4177 pnp transistor 6V marking m5 marking M6 transistor M6 Marking pnp

    2SA1611

    Abstract: marking m5 90-18 m6 marking transistor
    Text: Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR PCM : 0.15 1. 25¡ À0. 05 1. 01 REF Power dissipation W (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current


    Original     		PDF OT-323 OT-323 2SA1611 -100mA, -10mA 2SA1611 marking m5 90-18 m6 marking transistor

    L6 TRANSISTOR

    Abstract: l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4177W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1611. z Small package. Pb Lead-free APPLICATIONS z SOT-323 Audio frequency general purpose amplifier.


    Original     		PDF 2SC4177W 2SA1611. OT-323 BL/SSSTF039 L6 TRANSISTOR l4 transistor SOT-323 marking L6 SOT-323 marking .L6 transistor marking L6 marking L6 SOT 2SA1611 2SC4177W L4 SOT marking l4 sot

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1

    pa1476h

    Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
    Text: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674


    Original     		PDF X13769XJ2V0CD00 2SA1206* 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 pa1476h pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH

    6209A

    Abstract: TC-6209A 2SA1611 04 NG 537
    Text: zr— ^ — h N E C jr vU = i> 2SA1611 P N P X fcf£ * V # V=l> M m m m sm mm « "J o S / J\ f é W f ê T * U , /N'T 7 U KlCffl t 2.1 L T ft T - - T o < ¥ ii : mm ± 0.1 1.25 ±0.1 02SC4177 t 3 > y i j * > $ V ! : ' f è ï ï ? È £ T o o v m u s m ifX È


    OCR Scan     		PDF 2SA1611 02SC4177 iEI-620) SC-70 6209A TC-6209A 2SA1611 04 NG 537

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR FE A T U R E S PA CKA G E D IM E N S IO N S * C o m p le m e n t a ry to 2 S C 4 1 7 7 * H ig h D C C u rre n t G a in : hFE * 2 0 0 T Y P . V ce « -6 .0 V, lc = -1 .0 m A


    OCR Scan     		PDF 2SA1611 2SC4177

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTO R 2SC4177 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR FEATURES P A C K A G E D IM E N S IO N S • Complementary to 2SA1611 in m illim eters • High DC Current Gain: hpe = 200 TYP. V ce = 6-0 V, tc - 1.0 mA


    OCR Scan     		PDF 2SC4177 2SA1611

    2SC3735

    Abstract: 1SS153
    Text: Q U ICK REFERENCE GUIDE 3 TABLE OF SAME CH ARACTERISTICS IN DEFERENT PACKAGES 3 PIN SU P E R M IN I M O L D (FIG. 6) 3 PIN M IN I M O L D (FIG 4} FM /A M M IX ./ O SC / IF 2SC4179 2SC1009A AF A M P 2SA1611 2SA812 2SA1612 2SA811A A P P LIC A T IO N Driver, Output


    OCR Scan     		PDF 2SC4179 2SA1611 2SA1612 2SC4177 2SC4180 2SC4181 2SK853ADriver, 2SC1009A 2SA812 2SA811A 2SC3735 1SS153

    SA1611

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeter* • Complementary to 2SC4177 2 . 1 ± 0.1 • High D C Current Gain: hpE = 200 TYP. {VC e = - 6 . 0 V, lc « - 1 . 0 m A


    OCR Scan     		PDF 2SA1611 2SC4177 SA1611

    TC-6209

    Abstract: 2SA1611 2SC4177 MEI-1202 2115A NEC IC free
    Text: DATA SHEET IMEC SILICON TRANSISTOR 2SA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR FEATURES • C om plem entary to 2SC4177 • High DC Current Gain: hFE = 200 TYP. V ce = -6 .0 V, Ic = -1 .0 mA • High Voltage: V ceo = -5 0 V


    OCR Scan     		PDF 2SA1611 2SC4177 IEI-1209) TC-6209 2SA1611 2SC4177 MEI-1202 2115A NEC IC free

    2SA1598

    Abstract: 2SA1622 2sa1612 2SA1586 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l
    Text: 35 - m « Type No. a « Manuf. SANYO 2SA 1575 2SA 1576 □—A 2SA 1577 / 2SA 1579 □—A □—A □ —A 2SA 1584 □—A 2SA1784 □- A ¿ Ò D V ù Q 2SA 1578 ¿o n HOC nuu 2SA 1586 . 2SA 1587 , $ 2SA 1588 K 2 2SA 1589 h m 2SA 1590 E ft 2SA 1591 , E ft


    OCR Scan     		PDF 2SA1483 2SA1622 2SA1586 2SA1611 2SB1218A 2SA1603 2SA1745 2SA1588 2SA1608 2SA1532 2SA1598 2sa1612 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l