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    2SA1429 Price and Stock

    Toshiba America Electronic Components 2SA1429-Y(T2TR,F,M

    TRANS PNP 80V 2A MSTM
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    Toshiba America Electronic Components 2SA1429-Y(T2OMI,FM

    TRANS PNP 80V 2A MSTM
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    2SA1429 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1429 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: MSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC3669 Original PDF
    2SA1429 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1429 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1429 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1429 Unknown Silicon PNP Transistor Scan PDF
    2SA1429 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1429 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1429 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1429 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1429 Toshiba Silicon PNP transistor for power amplifier and power switching Scan PDF
    2SA1429 Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1429-O Toshiba 2SA1429 - TRANSISTOR 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1429-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1429O Toshiba Silicon PNP Epitaxial Transistor Scan PDF
    2SA1429-Y Toshiba 2SA1429 - TRANSISTOR 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1429-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1429Y Toshiba Silicon PNP Epitaxial Transistor Scan PDF
    2SA1429-Y(T2OMI,FM Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 80V SC71 Original PDF
    2SA1429-Y(T2TR,F,M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 80V SC71 Original PDF
    2SA1429-Y(TPF2,F) Toshiba 2SA1429 - TRANSISTOR PNP 80V 2A MSTM Original PDF

    2SA1429 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1429

    Abstract: 2-7D101A 2SA1429 2SC3669
    Text: 2SA1429 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1429 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		PDF 2SA1429 2SC3669 2-7D101A 20070701-JA A1429 2-7D101A 2SA1429 2SC3669

    A1429

    Abstract: No abstract text available
    Text: 2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1429 2SC3669. 2-7D101A A1429

    A1429

    Abstract: 2-7D101A 2SA1429 2SC3669
    Text: 2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1429 2SC3669. A1429 2-7D101A 2SA1429 2SC3669

    2-7D101A

    Abstract: 2SA1429 2SC3669 A1429
    Text: 2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SA1429 2SC3669. 2-7D101A 2SA1429 2SC3669 A1429

    A1429

    Abstract: 2SC3669 2SA1429 2-7D101A
    Text: 2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SA1429 2SC3669. A1429 2SC3669 2SA1429 2-7D101A

    2-7D101A

    Abstract: 2SA1429 2SC3669 A1429
    Text: 2SA1429 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1429 電力増幅用 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		PDF 2SA1429 2SC3669 2-7D101A 2-7D101A 2SA1429 2SC3669 A1429

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    C3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3669 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		PDF 2SC3669 2SA1429 2-7D101A 20070701-JA C3669 2SC3669 2-7D101A 2SA1429

    c3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3669 2SA1429 c3669 2SC3669 2-7D101A 2SA1429

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1429 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A)


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 429 Unit in mm • Low Collector Saturation Voltage : VCE(sat) = -0 .5 V (Max.) (IC = - 1A) • High Speed Switching Time : tgtg = l.O/^s (Typ.)


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A

    2SC3669

    Abstract: 2SA1429
    Text: TOSHIBA 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • • Low Saturation Voltage : Vce (sat) = 0-5V (Max.) High Speed Switching Time : tstg= 1.0/^s (Typ.) Complementary to 2SA1429


    OCR Scan     		PDF 2SC3669 2SA1429 961001EAA2 2SC3669 2SA1429

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1429 U nit in mm POW ER AM PLIFIER APPLICATIO N S. POW ER SW ITCHIN G APPLICATIO N S. • • • Low Collector Saturation Voltage : v CE(sat) = - °-5V (Max.) (Iq = - 1A) High Speed Switching Time : tstg= 1.0/^s (Typ.)


    OCR Scan     		PDF 2SA1429 2SC3669.

    2-7D101A

    Abstract: 2SA1429 2SC3669
    Text: TO SH IBA 2SA1429 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 429 7.1 MAX 3.8 32 Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1 A ) — J". . •


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A 2SA1429 2SC3669

    2-7D101A

    Abstract: 2SA1429 2SC3669
    Text: 2SA1429 TOSHIBA 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : v CE(sat)= -0 .5 V (Max.) (l£ = -1A )


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A 2SA1429 2SC3669

    2-7D101A

    Abstract: 2SA1429 2SC3669
    Text: 2SA1429 TO S H IB A 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : VCE(sat)= -0 .5 V (Max.) (IC = -1 A )


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A 2SA1429 2SC3669

    2-7D101A

    Abstract: 2SA1429 2SC3669
    Text: 2SA1429 TO SH IBA 2 S A 1 429 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X 2 .7 M A X • • • 1.0 Low Collector Saturation Voltage : v CE(sat)= -0 .5 V (Max.) (1^= -1A )


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A 2SA1429 2SC3669

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V q e (sat) = 0-5V(Max.) High Speed Switching Time : tstg = 1.0,«s (Typ.)


    OCR Scan     		PDF 2SC3669 2SA1429

    2SC3669

    Abstract: 2-7D101A 2SA1429
    Text: TO SH IBA 2SC3669 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		PDF 2SC3669 2SA1429 2-7D101A 20truments, 2SC3669 2-7D101A 2SA1429

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346