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    2SA1296 Search Results

    2SA1296 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1296 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA1296 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1296 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1296 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1296 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1296 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1296 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1296 Unknown Cross Reference Datasheet Scan PDF
    2SA1296 Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Scan PDF
    2SA1296 Toshiba TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Scan PDF
    2SA1296 Toshiba TO-92 Transistors Scan PDF
    2SA1296 Toshiba PNP transistor Scan PDF
    2SA1296-GR Toshiba 2SA1296 - TRANSISTOR 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1296-GR Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1296GR Toshiba Silicon PNP Transistors Scan PDF
    2SA1296-GR(F) Toshiba 2SA1296 - Trans GP BJT PNP 20V 2A 3-Pin TO-92 Original PDF
    2SA1296-Y Toshiba 2SA1296 - TRANSISTOR 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1296-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1296Y Toshiba Silicon PNP Transistors Scan PDF

    2SA1296 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1296 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3266 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)


    Original     		PDF 2SA1296 2SC3266 SC-43 2SA1296 2SC3266

    2SC3266

    Abstract: 2SA1296
    Text: 2SC3266 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3266 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1296 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2SC3266 2SA1296

    2SC3266

    Abstract: 2SA1296
    Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) · Complementary to 2SA1296 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2SC3266 2SA1296

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266

    2SA1296GR

    Abstract: 2SA1296
    Text: 2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   Low Saturation Voltage：VCE sat High DC Current Gain G 2SA1296-Y 120~240 Range


    Original     		PDF 2SA1296 2SA1296-Y 2SA1296-GR 18-Jan-2011 -10mA, 2SA1296GR 2SA1296

    2sc3266

    Abstract: No abstract text available
    Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2sc3266

    Untitled

    Abstract: No abstract text available
    Text: 2SA1296 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1296 Freq120M

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A · Complementary to 2SC3266. Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266

    2SC3266

    Abstract: No abstract text available
    Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2SC3266

    2SA1296

    Abstract: No abstract text available
    Text: 2SA1296 2SA1296 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -2 A Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SA1296 -10mA, 2SA1296

    2SA1296

    Abstract: 2SC3266
    Text: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3266 2SA1296 SC-43 2SA1296 2SC3266

    2SA1296

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1296 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -20


    Original     		PDF 2SA1296 -10mA, 2SA1296

    2SA1296

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1296 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range


    Original     		PDF 2SA1296 -10mA, 2SA1296

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SA1296

    Abstract: 2SC3266
    Text: 2SA1296 TO SH IBA 2 S A 1 296 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS . 5.1 MAX. • • Low Saturation Voltage : V qe (sat)“ —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.


    OCR Scan     		PDF 2SA1296 2SC3266. SC-43 2SA1296 2SC3266

    2SA12

    Abstract: 2SA1296 2SC3266 SA12
    Text: TOSHIBA 2SA1296 2 S A 1 296 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V qe (sat)= —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.


    OCR Scan     		PDF 2SA1296 2SC3266. SC-43 961001EAA2' 2SA12 2SA1296 2SC3266 SA12

    2SA1296

    Abstract: 2SC3266
    Text: TOSHIBA 2SC3266 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3266 Unit in mm PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V q ^ ( s a t ) “ 0.5V (Max.) (l£ = 2A) Complementary to 2SA1296


    OCR Scan     		PDF 2SC3266 2SA1296 SC-43 961001EAA1 2SA1296 2SC3266

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3266 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS ^ MF mm Unit in mm PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS 5.1 M A X . • • Low Saturation Voltage : V q e ( s a t ) = ^-5V (Max.) (Iç = 2A) Complementary to 2SA1296


    OCR Scan     		PDF 2SC3266 2SA1296

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR. SEM ICO NDU CTO R T O SH IB A TECHNICAL 2 S A 1296 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1296) POWER AMPLIFIER APPLICATIONS U n it in mm POWER SWITCHING APPLICATIONS Low Satu ration Voltage : V q e (s a t)= —0.5 (M ax.) @ I q = —2A


    OCR Scan     		PDF 2SA1296 2SA1296) 2SC3266. 2SA1296-2*

    2SA1309

    Abstract: 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N 2SA1264N sa1312 2SC3280
    Text: - 28 - M % Ta=25t , *E[KäTc=25cC) m. 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 2SA1287 2SA1289 2SA1290 2SA1291 2SA1292 2SA1293 2SA1294 2SA1295 2SA1296 2SA1297 2SA1298 2SA1299 2SA1300 2SA1301 2SA1302 2SA1303


    OCR Scan     		PDF Ta-25cC, 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 O-92JFÃ 2SA1300 2SA1309 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N sa1312 2SC3280

    2SA1296

    Abstract: 2SC3266
    Text: TO SH IBA 2SC3266 TOSHIBA TRANSISTOR POWER AMPLIFER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3266 Unit in mm POWER SWITCHING APPLICATIONS • • . 5.1 MAX. Low Saturation Voltage : Vq ^ (sat) = 0.5V (Max.) (l£ = 2A) Complementary to 2SA1296


    OCR Scan     		PDF 2SC3266 2SA1296 SC-43 2SA1296 2SC3266

    Untitled

    Abstract: No abstract text available
    Text: 2SA1296 T O SH IB A 2 S A 1 296 TO SH IB A TRA N SISTO R PO W ER A M PLIFIER A P P LICA TIO N S SILICO N PNP E P ITA X IA L T Y P E PCT PROCESS U n it in m m PO W ER SW ITCHIN G A PPLICA TIO N S r 0 .4 5 0 55 (V lA X , ! I 4.7 M A X . Low Saturation Voltage : V@e (sat)= -0-5 (Max.) @ Ic= -2 A


    OCR Scan     		PDF 2SA1296 2SC3266.

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737