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onsemi 2N5550 Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 Bulk
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Onlinecomponents.com	2N5550		3,264			1 - 10 - 100 - 1000 $0.2424 10000 $0.16	Buy Now

2N5550S Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
2N5550S		Korea Electronics	TRANS GP BJT NPN 140V 0.6A 3SOT-23		Original	PDF
2N5550S		Korea Electronics	EPITAXIAL PLANAR NPN TRANSISTOR		Scan	PDF
2N5550S		Korea Electronics	High Voltage Transistor		Scan	PDF

2N5550S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N555 Abstract: 2N5550S SOT-23 2N5550S Text: SEMICONDUCTOR 2N5550S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZP 1 2 Item Marking Description Device Mark ZP 2N5550S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	PDF	2N5550S OT-23 2N555 2N5550S SOT-23 2N5550S
2N5550S Abstract: No abstract text available Text: SEMICONDUCTOR 2N5550S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=160V, VCEO=140V D High Collector Breakdwon Voltage 3 G A 2 H Low Leakage Current. 1 : ICBO=100nA Max. VCB=100V	Original	PDF	2N5550S 100nA 100MHz 2N5550S
2N5550S Abstract: No abstract text available Text: SEMICONDUCTOR 2N5550S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=160V, VCEO=140V H ᴌLow Leakage Current. 3 G A 2 D ᴌHigh Collector Breakdwon Voltage 1 : ICBO=100nA Max. VCB=100V	Original	PDF	2N5550S 100nA 100MHz 2N5550S
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR 2N5550S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 A 3 G : VCBO=160V, VCEO=140V H ・Low Leakage Current. 1 : ICBO=100nA Max. VCB=100V	Original	PDF	2N5550S 100nA OT-23 100MHz 10Hz15 Width300
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR 2N5550S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR E B L D L 3 H G A 2 1 P J N MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C	Original	PDF	2N5550S OT-23
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	PDF	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
khb9D5N20P Abstract: khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	PDF	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb9D5N20P khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
KIA78pI Abstract: transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	PDF	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78pI transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
MB4213 Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors	Original	PDF	SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
2N5550S Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA 2N5550S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM A B C D E G H J K L M N P • High Collector Breakdwon Voltage : V cbo= 1 6 0 V V ceo =140V • Low Leakage Current. : ICBO =100nA M ax. VCB=100V	OCR Scan	PDF	2N5550S 100nA 100MHz 250//A 300//S, 2N5550S
2N5550S Abstract: No abstract text available Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. 2N5550S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM • High Collector Breakdwon Voltage : V Cbo=160V, V Ceo=140V • Low Leakage Current. : ICBo=100nA Max. VCB=100V	OCR Scan	PDF	2N5550S 100nA 100MHz 250//A 300//S, 2N5550S
Untitled Abstract: No abstract text available Text: SE M IC O N D U C T O R 2N5550S TECHN ICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. L B L D IM FEATURES • High Collector Breakdwon Voltage 2.93 ± 0.20 B 1.3040.20/-0.15 C : Vcbo=160V, Vceo=140V • Low Leakage Current.	OCR Scan	PDF	2N5550S Ic-50mA 100MHz 300/iS,