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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89-3L PXT3904 TRANSISTOR NPN 1. BASE FEATURES z Compliment to PXT3906 z Low current z Low voltage 2. COLLECTOR 1 2 3 3. EMITTER MARKING: 1A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89 OT-89-3L PXT3904 PXT3906 100mA 100MHz 10Hz-15

    PXT3906

    Abstract: PXT3904
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 1 2. COLLECTOR 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-89 OT-89 PXT3906 PXT3904 -10mA -50mA 100MHz 10Hz-15 -10mA PXT3906 PXT3904

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 2. COLLECTOR 1 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L PXT3906 PXT3904 -100mA -10mA -50mA

    PXT3906

    Abstract: marking 1A
    Text: PXT3904 SOT-89 Transistor NPN 1. BASE 1 3. EMITTER 2 B 2.6 4.25 2.4 3.75 — Compliment to PXT3906 — Low current 0.8 MIN 0.44 0.37 Low voltage MARKING: 1A Value Units VCBO Collector-Base Voltage Parameter 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage


    Original     		PDF PXT3904 OT-89 OT-89 PXT3906 100mA 100MHz 10Hz-15 marking 1A

    PXT3904

    Abstract: PXT3906 marking 1A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 PXT3904 TRANSISTOR NPN 1. BASE FEATURES 1 z Compliment to PXT3906 z Low current z Low voltage 2. COLLECTOR 2 3 3. EMITTER MARKING: 1A MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-89 OT-89 PXT3904 PXT3906 100mA 100MHz 10Hz-15 PXT3904 PXT3906 marking 1A

    Untitled

    Abstract: No abstract text available
    Text: PXT3906 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 3. EMITTER 2 Features — Compliment to PXT3904 — Low current — Low voltage B 2.6 4.25 2.4 3.75 0.8 MIN 0.44 0.37 MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol 4.6 4.4 1.8


    Original     		PDF PXT3906 OT-89 OT-89 PXT3904 -10mA -50mA -100mA

    2N5401

    Abstract: No abstract text available
    Text: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V


    OCR Scan     		PDF 2N5401 -160V, 5-50nA -50mA, -10mA 100MHz 10Hz-15 2N5401

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan     		PDF 2N5400 2N5550 2N5551 O-92A 2N5400, 2N5401 2N5550,

    D00373

    Abstract: GDG3737 A138
    Text: ALLEGRO MICROSYSTEMS INC 13 î • 0SDM33Ô GD03737 fl ■ T-91-01 PROCESS VHB Process VHB PNP High-Voltage Transistor Process V H B is a P N P double-diffused silicon epi­ taxial planar device. It is designed for use in highvoltage amplifier circuits. It is the complement to NPN


    OCR Scan     		PDF 05DM33Ã GDG3737 T-91-01 D00373 A138

    2N555

    Abstract: 5401 transistor 2N 5551 2N5400 5551 555-1 transistor 2N5401 1000C 2N5401 2N5550
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan     		PDF 2N5400 2N5401 2N5550 2N5551 2N5400, 2N5401 2N5550, O-92A 2N5400 2N555 5401 transistor 2N 5551 5551 555-1 transistor 2N5401 1000C

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N •m ü i REF01 +10V Precision VOLTAGE REFERENCE FEATURES DESCRIPTION • OUTPUT VOLTAGE: +10V ±0.2% max • EXCELLENT TEMPERATURE STABILITY: 8.5ppm/°C max -40°C to +85°C 10.0 ppm/°C max (~55°C to +125°C) • LOW NOISE: 5^Vp-p typ (0.1 Hz to 10Hz)


    OCR Scan     		PDF REF01 40VDC REF01 10knto 50kii AB-002 AB-004 OPA27.

    Untitled

    Abstract: No abstract text available
    Text: 2N5209 • 2N5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS 1 CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087- '0 EBC ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 2N5209 2N5210 O-92A 2N5209, 2N5210 2N5086, 2N5087- 350mW BOX69477 2N5209

    YTS4126

    Abstract: YTS4403 YTS4125 YTS4124 YTS4401 YTS4123 YTS4400 YTS4402 sc 005 04
    Text: - 350 - 1 1 T a = 2 5 tC . * E P f i T c = 2 5 t 5 m % m m VcBO Vceo (V) (V) ÍCC DC) (A) Pc Pc* iCBO (max) Vc b (W) (W) (ilk) (V) YTS4124 M 2 G A/SW 30 25 0. 2 0.2 0.05 20 YTS4125 M 2 G A/SW -30 -2 5 -0.2 0.2 M2 M2 M2 M2 M2 G A/SW -25 - 25 -0.2 0 .2 -0.05


    OCR Scan     		PDF YTS41Z4 YTS4125 YTS4126 YTS4400 S4401 YTS4402 YTS4403 YTS4401 YTS4126 YTS4403 YTS4125 YTS4124 YTS4401 YTS4123 YTS4400 YTS4402 sc 005 04

    YTS2222A

    Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
    Text: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60


    OCR Scan     		PDF UN8231A UN9110 UN9111 UN9113 UN9114 003ax SC-59) YTS2222A YTS2221 SC-59 YTS2222A YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907

    ic 5209

    Abstract: 2N5209 2N5210 2N5086 2N5087 BOX69477 MICRO ELECTRONICS 2N 5209 ebc
    Text: 2N5209 • 2N5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS J CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087- EBC ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 2N5209, 2N5210 2N5086, 2N5087. O-92A 550mW IC-10mA RG-22Ka 10Hz-15KHz IC-20pA ic 5209 2N5209 2N5086 2N5087 BOX69477 MICRO ELECTRONICS 2N 5209 ebc

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    05G433

    Abstract: No abstract text available
    Text: A L L E GR O M C R O S Y S T E M S INC S3 » • 05Ü4338 OODSbbS HALGR T - ^ l- o l PROCESS BXE Process BXE PNP Small-Signal Transistor Process BXE is a double-diffused PNP epitaxial planar silicon transistor designed for use in generalpurpose amplifier and switching applications. Its


    OCR Scan     		PDF 05D433S T-91-ol 200mA 004SQ. BE10N1 05G433

    Untitled

    Abstract: No abstract text available
    Text: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. 1 EBC ABSOLUTE MAXIMUM RATINGS for


    OCR Scan     		PDF 2N5086 2N5088 2N5087 2N5089 T0-92A 2N5086, 2N5088;