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    2N5347 Price and Stock

    Microchip Technology Inc 2N5347

    PNP TRANSISTORS
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    GTCAP 2N5347

    Bipolar Junction Transistor, NPN Type, TO-210AA
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    Quest Components 2N5347 23
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    Others 2N5347

    Bipolar Junction Transistor, NPN Type, TO-210AA
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    Quest Components 2N5347 2
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    2N5347 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5347 Diode Transistor NPN Transistor Selection Guide - TO-111 and TO-61 Packages Scan PDF
    2N5347 Diode Transistor Transistor Short Form Data Scan PDF
    2N5347 General Diode Transistor Selection Guide Scan PDF
    2N5347 General Transistor NPN Power Transistors Scan PDF
    2N5347 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5347 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5347 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5347 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5347 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5347 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5347 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5347 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5347 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5347 Unknown Transistor Replacements Scan PDF
    2N5347 Unknown Transistor Replacements Scan PDF
    2N5347 Unknown Transistor Replacements Scan PDF
    2N5347 Unknown Transistor Replacements Scan PDF
    2N5347 New England Semiconductor BIPOLAR ISOLATED COLLECTOR NPN TO-61 / TO-111 Scan PDF
    2N5347 New England Semiconductor NPN TO-61 / TO-111 Transistor Scan PDF
    2N5347 New England Semiconductor NPN Transistors, TO-61 / TO-111 Scan PDF

    2N5347 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc897 hitachi

    Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .


    Original
    PDF 2SA648 2SA663 2SC793 2SD188 2N5347 2N5478 2N6316 2N6318 2N5872 2N5874 2sc897 hitachi nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original
    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    Untitled

    Abstract: No abstract text available
    Text: Ic = 7.0 AMPS DEVICE TYPE PACKAGE 2N3878 2N3879 2N5346 2N5347 2N5348 BVCbo VOLTS BVebo VOLTS P0 @ 100°C WATTS h FE @ VcE Min. Max. AMPS VOLTS TO-66 50 TO-66 75 TO-59/lso 80 TO-59/lso 80 TO-59/lso 100 120 120 80 80 100 7.0 7.0 6.0 6.0 6.0 20.0 20.0 34.0 34.0


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    PDF 2N3878 2N3879 2N5346 2N5347 2N5348 2N5349 2N5427 2N5428 2N5429 2N5430

    2N5006

    Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
    Text: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N52B9 2N5285 2N534E 2N5347 2N5348 2N5317 2N5319 2N5731 2N5957 WALTA

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5


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    PDF 0-20A 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957 2N6128

    2N4116

    Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
    Text: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850


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    PDF fll34fc, 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N4116 2N5304 2N2658

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    2N5075

    Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
    Text: GENERAL TRANSISTOR CORP 34E D 3^50001 GOQGQfe.T 7 * ~ F - 3 3 ~ 0 l General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 NPN Power Transistors ISOLATED COLLECTOR 1C


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    PDF b80-100V 2N5006 2N5008 2N5288 2N5284 2N5285 2N5346 2N5347 2N5348 2N5349 2N5075 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957

    2N5730

    Abstract: 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285
    Text: Il 000012a NPNTO-111 isolated collector (cont’d) ZTB483&#39;52 D IO D E T R A N S I S l U K C O IN C . 8 4 D ~Ô Ô l2 6“ D1QDE TRâ(\)515TQB CQ„ JWC. (201) 666*0400 • Telex; 139-385 • Outslde NY & NJ area cali TOLL FREE 800-526-4581 FAX No. 201-675-5863


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    PDF NPNTO-111 2T548352 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5730 2N5285

    2N5084

    Abstract: 2N5284 FL-35A 2N4115 2N5085 2N4116 2N5002 2N5004 2N5083 2N5285
    Text: llP NPMTO-111 I s o la t e d c n llB n t n . - lt e n n . - r t ' ^ 84aa_^ 2 DIQDE TRANSISTOR CO IN C . l a f l H B 3 S E 0G0Q13S □ I Ö4D 0 0 1 2 8 ^ ——— t D1DDE TRANSISTOR CQ.J(\IC. FA X ^ 201 ^ 6 75 58 83 139-385 * 0u,8lde N V 4 N J area ca|l T O LL F R EE 800-526-4581


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    PDF NPWTO-111 fl35a Tfidf\l515T0R 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 FL-35A 2N5285

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


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    PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    2N5076

    Abstract: 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N4116
    Text: NEIII ENGLAND SEMICONDUCTOR STE D • b5b4^3 □□□□OSa QflT B i NES ' 7 2N5006 VCEO SUS (V) 1C (MAX) W tlFE IC/VCE (min-max ® A/V) VBE (SAT) ® IC/lB (V @A/A) TC = 100 °C (Watts) 1 = 1 B6C (A ® V) ff tON @ ICJlB tOFF ® IC/lB (MHz) (¿is @ A/A)


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N5289 1S012O 2N5285 2N5346 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N4116

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2N4116

    Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
    Text: NEW E N G L A N D S E M I C O N D U C T O R STE D • b5b4^3 OOODOSfi DAT * N E S 3 VCEO SUS (V) 1C (MAX) W - / NPN TO-61 = 10-20A VcEO(SUS) = 8 0-1 00V fT = 10-50 MHz lc (M A X ) Type No. 3 ISOLATED COLLECTOR Case 8 0 6 tlFE 0 IC/VCE (mln-max @ A/V) VCE (SAT)


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N5289 2N5284 2N5285 2N5346 2N5347 2N4116 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    2N5004 ppc

    Abstract: JANTX2N5664 2N7373
    Text: Microsemi NPN Transistors Part Number JANS2N5664 JANTX2N5664 JANTXV2N5664 ! 2N5665 JAN2NS665 JANS2N5665 JANTX2N5665 JANTXV2N5665 2N7374 2N7375 2N5614 2N5002 2N5004 2N5616 2N5618 2N7373 JAN2N5002 JAN2NS004 JANS2N5002 JANS2N5004 JANTX2N5002 JANTX2N5004 JANTXV2N5002


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    PDF O-257 O-254 NPN-15 2N5004 ppc JANTX2N5664 2N7373

    irf48n

    Abstract: 79M15 mfd navy MIL-M-38510/115 79m05 IRF 24N 2N6296 TX2N4033
    Text: MIL-M-38510/115 27 A pril 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE REGULATORS, MONOLITHIC SILICON This specification 1s approved for use by all Depart­ ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for fixed output, monolithic


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    PDF MIL-M-38510/115 MIL-M-38510. vol30 irf48n 79M15 mfd navy 79m05 IRF 24N 2N6296 TX2N4033

    2N5076

    Abstract: TO61 package 2N5004 JANTXV 2n5349 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR ISOLATED COLLECTOR NPN TO-61 V c eo Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS NPN TO-61 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128 2N6689 2N6690 2N6691A 2N6692 2N6693A 80 80 100 80 100 80 300 400 300 350 400 10 10 10 10


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    PDF 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128 2N6689 2N6690 2N6691A 2N6692 2N5076 TO61 package 2N5004 JANTXV 2n5349

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor