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    2N1886 Search Results

    2N1886 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1886 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1886 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1886 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1886 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1886 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1886 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1886 Unknown Vintage Transistor Datasheets Scan PDF
    2N1886 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1886 Pirgo Electronics Power Transistors in TO-3 / TO-53 TO-59 Scan PDF
    2N1886 Semitronics Silicon Power Transistors Scan PDF
    2N1886 Solid Power POWER TRANSISTORS Scan PDF
    2N1886 Solid Power Power Transistors in TO-3 / TO-53 / TO-59 Package Scan PDF

    2N1886 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2828

    Abstract: 2N2829 2N2828 - 2N2829
    Text: , Jna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N1647 - 2N1650 2N1886 2N2828 - 2N2829 TYPE NO. PT MAXIMUM RATINGS @ Ic 25°C BVceo BVCEO BVEBO A V V V Watts 2N1647 40 80 60 6 3 HFE


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    2N1647 2N1650 2N1886 2N2828 2N2829 2N1647 2N1648 2N1649 2N2829 2N2828 - 2N2829 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1886 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)350u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)1.0


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    2N1886 PDF

    B0935

    Abstract: 2s0880 je181 to127 2SC1983 Sanken 2S0762 B0177 to-53 MJE31A GS2013 G
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 >= 2.5 A, 2N389 2N1470 BOT29A BOT29A BOT29AF B0177 2N1079 2N1080 2N3418S 2N2033 2N2034 2N2035 2N2036 2N2828 2N2829 2N1886 R4922 B0116 2N3418 BOT31AF BOT31AF MJE31A 2N4232 2N4232A 042C7


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    2N389 2N1470 BOT29A BOT29AF B0177 2N1079 2N1080 2N3418S 2N2033 B0935 2s0880 je181 to127 2SC1983 Sanken 2S0762 to-53 MJE31A GS2013 G PDF

    2N1893 motorola

    Abstract: BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


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    MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1893 motorola BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39 PDF

    2SD369A

    Abstract: to-53 2SC1025 MJE2491 KT816V matsua
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M


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    2N4232 2SB761 2SB929 2SB941 2SD1266 2SD856 2SD1761 BDT31A 2SD369A to-53 2SC1025 MJE2491 KT816V matsua PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    2N424

    Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


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    2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N424 2N1722 2N389 to-53 2N389A PDF

    2N1620

    Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


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    2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N1620 2N1211 2N1886 2N2032 2N5631 JANTX 2N389 2N389A PDF

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


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    2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    2N5631 JANTX

    Abstract: 2n1620 2N2032 2N5634 2N389 2N389A 2N5067 2N5629 2N5630 2N5631
    Text: A P I ELECTRONICS INC 00435^2 00002^3 740 * A M C blE D '- 33-/3 POW ER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V cbo B V ceo B V ebo Ic V V V A Sat Test Voltages Conditions Ib Iebo VcE V be Ic V V A A ma » hrE MIN MAX Ic A VCE V 2N5067 88


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    2N5067 N5068 N5069 2N5629 2N5630 2N5631 2N5632 2N5633 2N5634 2N2383 2N5631 JANTX 2n1620 2N2032 2N389 2N389A PDF

    2N1649

    Abstract: No abstract text available
    Text: POWER TRANSISTORS PT TYPE NO. @ 25°C Watts MAXIMUM RATINGS B V cbo B V ceo B V ebo V V V h E Ir A @ MAX Ic A V ce M IN V Sat Test Voltages Conditions Ib Iebo Vce V be Ic V A V A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1


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    2N5067 2N5068 2N5069 2N5630 2N5631 2N5632 2N5633 2N5634 2N389 2N389A 2N1649 PDF

    2N1647

    Abstract: No abstract text available
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages Va V« V V Test Conditions Ib Ic Iebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2 1.0


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    2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N2828 2N2829 0435C TWX-510-224-6582 2N1647 PDF

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


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    2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


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    1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


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    Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier PDF

    IN733A

    Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
    Text: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano


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    2N582 2N5828 2N5828A 2N5829 2N5830 2N5831 2N5832 2N5833 2N6000 2N6004 IN733A 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N2828

    Abstract: 2N2383 2N1886 2n1250
    Text: POWER TRANSISTORS PT TYPE NO. M AXIM UM RATINCS BV cbo B V ceo BV ebo lc V V V A Watts hft @ 25°C MIN MAX 65> lc VCE A V Sat Voltages Vci Vet V V Test Conditions Ib lc A A It 80 ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1


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    2N5067 2N5068 N5069 2N5629 2N5630 2N5631 2N5632 2N5633 2N5634 2N389 2N2828 2N2383 2N1886 2n1250 PDF

    2NS404

    Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
    Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55


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    2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2NS404 Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204 PDF

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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