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    2907A BF Search Results

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    2907A BF Price and Stock

    Central Semiconductor Corp CMPT2907A TR PBFREE

    Bipolar Transistors - BJT PNP Gen Purpose
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    Mouser Electronics CMPT2907A TR PBFREE 24,158
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    Central Semiconductor Corp CMPT2907AE TR PBFREE

    Bipolar Transistors - BJT PNP Enhanced
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    Mouser Electronics CMPT2907AE TR PBFREE 8,940
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    Central Semiconductor Corp CMUT2907A TR PBFREE

    Bipolar Transistors - BJT PNP
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    Mouser Electronics CMUT2907A TR PBFREE 8,185
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    Central Semiconductor Corp PN2907A PBFREE

    Bipolar Transistors - BJT PNP Gen Pur SW
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    Mouser Electronics PN2907A PBFREE 6,394
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    Central Semiconductor Corp CMKT2907AG TR PBFREE

    Bipolar Transistors - BJT Small Signal Dual PNP
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    Mouser Electronics CMKT2907AG TR PBFREE 5,453
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    2907A BF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pn2222a

    Abstract: PN2222 pnp PN2222A le PN2222
    Text: II N AMER PHILIPS/DISCRETE bTE D • bbSB'm DDSflOMb 244 ■ APX PN2222 PN2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope prim arily intended fo r linear and switching applications. P-N-P complement is PN2907/2907A.


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    PN2222 PN2222A PN2907/2907A. MBB012 pn2222a PN2222 pnp PN2222A le PDF

    2907

    Abstract: 2N2907 2907a 2N2908 2N2906 2N2907A 2n2906a A2907A J 2N2907 2IM2907
    Text: * 2 N 2906,A * 2 N 2907, A PNP SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS PNPSILICIUM, PLANAR EPITAXIAUX Compì, of 2N 2221, A and 2N 2222, A ^ Preferred device D is p o s itif recommandé - LF or HF amplification Amplification BF ou HF - Medium current switchinçi


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    2N2906 2N2907 2907 2907a 2N2908 2N2907A 2n2906a A2907A J 2N2907 2IM2907 PDF

    marking code nt amplifier

    Abstract: MARKING 2907A 2907A BF
    Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


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    PN2907A MMBT2907A PZT2907A PN2907A MMBT2907A OT-23 OT-223 O-92-3 marking code nt amplifier MARKING 2907A 2907A BF PDF

    1N 2907A

    Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
    Text: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series


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    FMMT2907 FMMT2907A FMMT2222 OT-23 FMMT2907A FMMT2369A 1N 2907A BSS65 A12 marking marking H6 sot 23 PNP 2907a SOT23 marking FMMT2907A 2907a BCV72 PDF

    tm 1621

    Abstract: BD 811 BT3904 MBD6050 BF5484 2sa 2222a BTA 36 BF5457 1s2836 5T2907A
    Text: C r o s s R e f e r e n c e Guide to M ini M old D e v ic e M o t o r o la NEC N o te M o t o r o la NEC N o te E u rop ean NEC None M M BT6429 N one B A T 18 2 S A 8 12 M M .B T A 0 5 N one BA V 70 152838 2 S A 8 12 M M BTA 06 None BA V 99 1SS123 ¿SA M M B A 8 LI


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    BT6429 1SS123 BFR30 BFR92 BFS17 BFS18 BFS40 BFS41 BFS46 BFS85 tm 1621 BD 811 BT3904 MBD6050 BF5484 2sa 2222a BTA 36 BF5457 1s2836 5T2907A PDF

    T056

    Abstract: 2904 2904a 2905 2906 transistor t05 PN2904 T018 BFX29 N2905
    Text: PNP Silicon Transistors PN P S ilic o n Planar Transistors fo r m ed ium level sw itching Type PTOT 2 P h/rfdO V /IO m A hF f V 5 5 4 4 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 — > 50 — 3 3 > 40 > 40 50 . 200 (10/50) 50 . 200 (0.4/10) >40 (10/150) > 40 (10/150)


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    0V/50mA) 150mA/15mA) PN2904 T056 2904 2904a 2905 2906 transistor t05 T018 BFX29 N2905 PDF

    2907A EQUIVALENT

    Abstract: 2222A 2907 transistor 4393 s0918 BFQ22 equivalent a 2907 SOR2369 S02907 bfr93
    Text: m icropackaged transistors according to CNET specifications transistors en microboitier selon spécification CN ET Réf. C N E T Standard catalog product Produit catalogue standard TCH 918.3 TCH 918.5 SO R 918 S0 9 1 8 2N918 2N 918 TCH 2222.3 TCH 2222.5 S O R 2222


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    2N918 S0918 S02222 S02369 S02907 SOR2907A S02907" S02894 2907A EQUIVALENT 2222A 2907 transistor 4393 BFQ22 equivalent a 2907 SOR2369 bfr93 PDF

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


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    3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN PDF

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


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    3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423 PDF

    2N2475

    Abstract: BFS36 BFS38 BFS46 BFS41 2N2605 2N930 BFS36A BFS42 BFS38A
    Text: M ICRO-E CHARACTERISTICS AT 25°C p-n - -P n -p - n l\/l C I'M1U 1IPIV V/1I CURRENT GENERAL PURPOSE IVI tU TRANSISTORS Parameter BFS38A M in. Test Conditions M in. 25 - - 35 v CBO Rated Max. - VCEO sus l c = 5mA, Iß —0 25 v EBCi Rated Max. - 5 >CBO V c b = V c b O f*atec* ^ ax' ^E= 0


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    BFS38A BFS38 BFS39 BFS40A BFS40 BFS41 BFS36 2N930 BFS37 2N2605 2N2475 BFS38 BFS46 BFS41 2N2605 BFS36A BFS42 BFS38A PDF

    2907

    Abstract: N2907A 2N2907 N2907 2n2906 2907 pnp transistor 2907A a 2907 transistor 2907 2906
    Text: 'W ' 2 N 2906 * 2 N 2906 A * 2 N 2907 O * 2 N 2907 A Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: Verstärker und S chalter Applications: A m plifiers and sw itches Features: Besondere Merkmale:


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    PDF

    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


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    BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82 PDF

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


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    3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor PDF

    2904a

    Abstract: sc2035
    Text: PNP SILICON ANNULAR HERMETIC TRANSISTORS 2N2904,A* . . . d e s ig n e d f o r h ig h - s p e e d s w it c h in g c ir c u it s , D C t o V H F a m p l i f i e r a p p lic a ­ t i o n s a n d c o m p le m e n t a r y c ir c u it r y . thru • H ig h D C C u r r e n t G a in S p e c if ie d — 0 .1 t o 5 0 0 m A d c


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    2N2904 2N2907 2904a sc2035 PDF

    bcf 69

    Abstract: 2222a transistor BCF 70 catalogue de transistor transistor 2222a 2907 TRANSISTOR PNP SO1613 BCW General Purpose Transistor 300V transistor pnp 2a 2221A
    Text: m icropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de com m utation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221


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    O-236 T0236. bcf 69 2222a transistor BCF 70 catalogue de transistor transistor 2222a 2907 TRANSISTOR PNP SO1613 BCW General Purpose Transistor 300V transistor pnp 2a 2221A PDF

    ph 4148

    Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
    Text: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31


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    BAS29 BA481 BBY31 BAT81 BAS81 BBY40 BC847 BAT54 BC847A BT2907 ph 4148 f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71 PDF

    BC 2219a

    Abstract: BFX48 transistor 3504 npn 2N3108 2N3109 BFY50 BFY51 BFY56A
    Text: ¿ 7 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# M M I & J O T « ! SMALL SIGNAL TRANSISTORS NPN GENERAL PURPOSE TRANSISTORS - TO 39 v CEO V C ER* h FE m in/m ax 3> <C Type mA (V) v CE(sat) m ax Ï ic (mA) (V) Pfot «T min ‘ off* (M H z) (ns) (m W )


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    BFY51 BFY50 BFY56A BFX48 BC 2219a transistor 3504 npn 2N3108 2N3109 PDF

    BEL 100N TRANSISTOR

    Abstract: bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187
    Text: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts min hFE at bias mm /max. Ic mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 —


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    27min. 37min. 35friin. 50min 50min. 40min 40min. BEL 100N TRANSISTOR bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187 PDF

    SO4403

    Abstract: F5GL marking n20 So642 SO3903
    Text: S G S— THOMSON 71C D 1 7 ^ E CÎR37 0 0 0 4 ^ 1 , 3 | THOÎÏÎSOM SEMICONDUCTORS_ ' T - J r - // y . 3A f & switching transistors Characteristics at 2 5 °C Maximum Type« ratings NPN PNP p »o» VCEO (mWJ (V) 200 12 h2lE@ le min BSV 52


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    PDF

    BFY50 equivalent

    Abstract: 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti
    Text: Discrete Semiconductors T exas In s t r u m e n t s Absolute Maximum Rating hFE at Collector Current CV Number Commercial Case Equivalent Outline Polarity VC B VCE V eb hFE V V V hFE Ic Min. fT MHz Converted to BS9300 Small Signal Planar CV continued Comments


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    CV7722 bfy50 CV7723 BFY51 CV7724 BFY52 CV7725 CV7726 BFY50 equivalent 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti PDF

    BDP 284

    Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
    Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


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    3-03W 4-03W 5-03W Q62702-A829 Q62702-A859 Q62702-A950 Q62702-A952 Q62702-A608 Q62702-A718 Q62702-A687 BDP 284 BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529 PDF

    2N3707 DIODE

    Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


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    ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 2N3707 DIODE 2n4058 2N2475 BC107 equivalent Competitive BC108 PDF

    BEL100N

    Abstract: bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor
    Text: Si Device No VCEO Volts mm V cB O Volts mm V ebo Volts mm hFE at bias mm /max Ic mA V ce Volts 1 CM Plot ICBO mA mW uA max max typ V ce Sat Volts typ M Hz Cob Pt- typ typ ÍT ts N ns typ dB typ toff nsec — f Package NPN SWITCHING TRANSISTORS 20. 2N2218


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    2N2218 285max 2N2219A 2N2221A 222STOR BEL100N 2N3500 2N3501 2N3501TV 20min. bel 100n transistor 41 bf BEL100 BEL100N TRANSISTOR transistor BF 245 BEL 167 transistor BEL 100N BEL BF200 BF200 transistor PDF

    BEL 100N TRANSISTOR

    Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
    Text: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ


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    143S3Tfl 2N2218 285max 2N2219A 2N3501TV 20min. 22min. 2N918 2N929 BEL 100N TRANSISTOR BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115 PDF