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STMicroelectronics STI28N60M2 MOSFET N-CH 600V 22A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STI28N60M2	Tube	6,000		1	1 $3.92 10 $3.92 100 $2.14967 1000 $1.47365 10000 $1.31612	Buy Now
Avnet Americas	STI28N60M2	Reel		16 Weeks	1,000	1 - 10 - 100 - 1000 $1.36877 10000 $1.2898	Buy Now
Mouser Electronics	STI28N60M2		1,928			1 $2.81 10 $2.45 100 $1.51 1000 $1.31 10000 $1.31	Buy Now
Newark	STI28N60M2	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics	STI28N60M2		1,928		1	1 $2.75 10 $2.4 100 $1.5 1000 $1.34 10000 $1.34	Buy Now

Avnet Silica	STI28N60M2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STI28N60M2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SIHB28N60EF-GE3 MOSFET N-CH 600V 28A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB28N60EF-GE3	Tube	1,229		1	1 $6.85 10 $6.85 100 $6.85 1000 $2.7875 10000 $2.7875	Buy Now
STMicroelectronics STB28N60M2 MOSFET N-CH 600V 22A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STB28N60M2	Digi-Reel	913		1	1 $3.86 10 $2.532 100 $3.86 1000 $1.45304 10000 $1.45304	Buy Now
	STB28N60M2	Cut Tape	913		1	1 $3.86 10 $2.532 100 $3.86 1000 $1.45304 10000 $1.45304	Buy Now
Avnet Americas	STB28N60M2	Reel		16 Weeks	1,000	1 - 10 - 100 - 1000 $1.29113 10000 $1.21469	Buy Now
Mouser Electronics	STB28N60M2		868			1 $3.28 10 $2.36 100 $1.69 1000 $1.34 10000 $1.29	Buy Now
STMicroelectronics	STB28N60M2		868		1	1 $3.21 10 $2.31 100 $1.66 1000 $1.37 10000 $1.37	Buy Now
Avnet Silica	STB28N60M2			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STB28N60M2			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STF28N60DM2 MOSFET N-CH 600V 21A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STF28N60DM2	Tube	869		1	1 $4.15 10 $4.15 100 $4.15 1000 $1.46788 10000 $1.42313	Buy Now
Avnet Americas	STF28N60DM2	Tube		16 Weeks	1,000	1 - 10 - 100 - 1000 $1.48005 10000 $1.39466	Buy Now
Mouser Electronics	STF28N60DM2		562			1 $3.29 10 $3.29 100 $1.71 1000 $1.42 10000 $1.39	Buy Now
STMicroelectronics	STF28N60DM2		562		1	1 $3.22 10 $3.22 100 $1.68 1000 $1.48 10000 $1.48	Buy Now
Avnet Silica	STF28N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STF28N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STP28N60M2 MOSFET N-CH 600V 24A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STP28N60M2	Tube	833		1	1 $3.8 10 $3.8 100 $3.8 1000 $1.32284 10000 $1.26175	Buy Now
Avnet Americas	STP28N60M2	Bulk		15 Weeks, 6 Days	1	1 $2.21 10 $2.07 100 $1.58 1000 $1.58 10000 $1.58	Buy Now
	STP28N60M2	Tube		16 Weeks	1,000	1 - 10 - 100 - 1000 $1.31222 10000 $1.23652	Buy Now
Mouser Electronics	STP28N60M2		879			1 $3.45 10 $3.44 100 $1.71 1000 $1.32 10000 $1.26	Buy Now
Newark	STP28N60M2	Bulk	20		1	1 $2.21 10 $2.07 100 $1.58 1000 $1.55 10000 $1.55	Buy Now
STMicroelectronics	STP28N60M2		897		1	1 $3.1 10 $3.09 100 $1.64 1000 $1.37 10000 $1.37	Buy Now

ComSIT USA	STP28N60M2		465			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STP28N60M2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STP28N60M2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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28N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
28n60 Abstract: No abstract text available Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	28N60BD1 O-247 728B1 123B1 728B1 065B1 28n60	PDF
28N60B Abstract: em 404 Text: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms	Original	28N60B O-247 O-268 28N60B em 404	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	28N60B 28N60B O-268 O-247 O-247 O-268	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms	Original	28N60B O-247 O-268	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V	Original	28N60BD1 O-268 O-247	PDF
26n60 Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49 Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT	Original	26N60/IXFT 26N60 28N60 O-247 26n60 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49	PDF
Untitled Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V	Original	28N60B O-247 O-268	PDF
Untitled Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V	Original	28N60B 28N60B O-268 O-247 O-247 O-268AA	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	28N60BD1 O-268 O-247 728B1 123B1 728B1 065B1	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM	Original	28N60BD1 28N60BD1 O-247 O-268	PDF
26N60 Abstract: 28n60 Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT	Original	26N60/IXFT 26N60 28N60 O-247 O-268AA 28n60	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	28N60BD1 28N60BD1 O-268 O-247 O-247 temper000 728B1 123B1 065B1	PDF
Untitled Abstract: No abstract text available Text: 28N60M2, 28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages Datasheet - production data Features Order codes VDS @ TJmax RDS on max 28N60M2 650 V ID 0.150 Ω 22 A 28N60M2 • Extremely low gate charge	Original	STF28N60M2, STFI28N60M2 O-220FP, STF28N60M2 O-220FP O-281) DocID025255	PDF
Untitled Abstract: No abstract text available Text: 28N60M2 N-channel 600 V, 0.120 Ω typ., 24 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order codes VDS @ TJmax RDS on max ID 28N60M2 650 V 0.150 Ω 24 A(1) 1. Limited by maximum junction temperature.	Original	STF28N60M2 O-220FP O-220FP AM15572v1 DocID025255	PDF

Untitled Abstract: No abstract text available Text: 28N60M2, 28N60M2, 28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes 3 1 3 D2PAK 1 VDS @ TJmax RDS on max ID 650 V 0.150 Ω	Original	STB28N60M2, STP28N60M2, STW28N60M2 O-220 O-247 STB28N60M2 O-220 STP28N60M2 O-247	PDF
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information LowVrP, „ üh sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V ^C25 V CE(sat) Combi Pack AL Maximum Ratings Symbol TestConditions V CES Tj = 25°C to 150°C 600 V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	28N60BD1 O-247 O-268	PDF
Untitled Abstract: No abstract text available Text: nixYS Advanced Technical Information Low VCE sat IGBT with Diode IXGH 28N60BD1 VCES IXGT 28N60BD1 IC25 V CE(sat) = 600 V = 40 A = 2£ , U0 V V Combi Pack Maximum Ratings Symbol Test Conditions v T j = 25° C to 1 50° C 600 V V CGR T , = 25° C to 150° C; RGE„ = 1 MQ	OCR Scan	28N60BD1 O-268 O-247 stand201 B2-83	PDF
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information Ultra-LowVCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B V CES = 600 V = 40 A = 2.0 V ^C25 V CE(sat) Combi Pack Symbol TestConditions v CES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES	OCR Scan	28N60B O-268	PDF
Untitled Abstract: No abstract text available Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr D DS on ^D25 600 V 26 A 600 V 28 A trr < 250 ns 0.25 Q 0.25 Q Maximum Ratings IXFH/IXFT	OCR Scan	26N60/IXFT 26N60 28N60 O-247	PDF
025B2 Abstract: ge motor 752 Text: ' D I X Y Advanced Technical Information S Ultra-Low VCE sat IGBT with Diode 1XGH 28N60B IXGT 28N60B V CES ^C25 v CE(sat) 600 V 40 A 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings v CES T, = 2 5 °C to 1 5 0 °C 600 V VcOR T ,J = 25° C to 150° C; R_.	OCR Scan	28N60B 28N60B O-268 O-247 025B2 ge motor 752	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan		PDF
120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B	PDF

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28N60 Search Results

28N60 Price and Stock

STMicroelectronics STI28N60M2

Vishay Siliconix SIHB28N60EF-GE3

STMicroelectronics STB28N60M2

STMicroelectronics STF28N60DM2

STMicroelectronics STP28N60M2

28N60 Datasheets Context Search

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28N60B

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26n60

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26N60

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200n60

7n60b

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025B2

EATON CM20A

120n60b