Untitled
Abstract: No abstract text available
Text: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time
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32-Pin
28F512A
2S752Ã
0032fc
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N28F512-150
Abstract: 26F512 intel PLD
Text: INTEL CORP MENORY/PLP/ irrte1 5bE I • 182i,l?t, D07fa233 D27 28F512 512K (64K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jLts Typical Byte-Program — 1 Second Chip-Program
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D07fa233
28F512
-32-L
P28F512-120
P28F512-150
N28F512-120
N28F512-150
TP28F512-120
TN28F512-120
ER-20,
26F512
intel PLD
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TMS28F512A TEXAS INSTRUMENTS
Abstract: TMS28F512A
Text: TMS28F512A 524288-BIT FLASH MEMORY SMJS514B - FEBRUARY 1994 - REVISED MARCH 1996 Organization . . . 64K x 8-Bit Flash Memory All Inputs/Outputs TTL-Compatible Vcc Tolerance ±10% Maximum Access/Minimum Cycle Time 28F512A-10 100 ns ’28F512A-12 120 ns ’28F512A-15
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TMS28F512A
524288-BIT
SMJS514B
28F512A-10
28F512A-12
28F512A-15
28F512A-17
TMS28F512A
288-bit,
TMS28F512A TEXAS INSTRUMENTS
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intel Automotive
Abstract: AP28F512-120
Text: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -40°C to + 125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ¡is Typical Byte-Program — 1 Second Chip-Program
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OCR Scan
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A28F512
AP28F512-150
AP28F512-120
AN28F512-150
AN28F512-120
ER-20,
ER-23,
RR-60,
AP-316,
intel Automotive
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N28F512-200
Abstract: P28F512-200 28F512-150 29020 28f512-200
Text: intei 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program
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OCR Scan
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PDF
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28F512
28F512
P28F512-120
P28F512-150
P28F512-200
32-PIN
32-LEAD
N28F512-120
N28F512-150
N28F512-200
N28F512-200
P28F512-200
28F512-150
29020
28f512-200
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Untitled
Abstract: No abstract text available
Text: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP
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OCR Scan
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PDF
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28F512
P28F512-120
P28F512-150
N28F512-120
N28F512-150
TP28F512-120
TN28F512-120
ER-20,
RR-60,
ER-24,
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Untitled
Abstract: No abstract text available
Text: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 )j.s Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP
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OCR Scan
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PDF
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28F512
Flas12-120
N28F512-120
TP28F512-120
P28F512-150
N28F512-150
TN28F512-120
ER-20,
ER-24,
RR-60,
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28FS12
Abstract: No abstract text available
Text: a Am28F512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 pA maximum standby current
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Am28F512
32-Pin
Am28F512-75
28FS12
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AP28F512-120
Abstract: AP28F512 AN28F512-120 28F512 AP28F512-150 AN28F512 INTEL FLASH AP-316 ap-325 intel 28f512 irs2092
Text: In te l A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Autom otive Tem perature Range: - ¥ T C to + 12S*C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Qulck-Pulse Programming Algorithm — 10 n9 Typical Byte-Program
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OCR Scan
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PDF
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A28F512
32-PIN
32-LEAD
-H250C
AP28F512-150
AN28F512-150
AP28F512-120
AN28F512-120
ER-20,
AP28F512
AN28F512-120
28F512
AN28F512 INTEL FLASH
AP-316
ap-325
intel 28f512
irs2092
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28FS12
Abstract: 51212
Text: in t e i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ju.s Typical Byte-Program — 1 Second Chlp-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read
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28F512
32-Lead
N28F512-120
N28F512-150
TP28F512-120
TN28F512-120
ER-20,
ER-24,
RR-60,
AP-316,
28FS12
51212
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D28F512-120P1C4
Abstract: d28f512 N28F512-120P1C4 28F512-150P1C4 N28F512-150P1C4 N28F512-200P1C4 29020 N28F512-200
Text: INTE L CORP intel • M EM OR Y/ LO GI C SOE D ■ H&2bl 7h Q0b72fl2 S ■ V -^ -/5 -2 7 28F512 512K (64K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 iia Typical Byte-Program
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40Sbl7b
Q0b75Ã
T-M-ft-17
28F512
00b7304
T-46-13-27
32-PIN
32-LEAD
120ns
D28F512-120P1C4
d28f512
N28F512-120P1C4
28F512-150P1C4
N28F512-150P1C4
N28F512-200P1C4
29020
N28F512-200
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