MCS-96
Abstract: ESPC mcs96 family 8xc196kb memory external 8X96BH 27C256 8XC196KC 8XC196KR 8XC196KB AP475
Text: AP-475 APPLICATION NOTE Using the 8XC196NT RICHARD N EVANS CHRISTINE NEFFENGER APPLICATIONS ENGINEERS January 1994 Order Number 272315-001 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in
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AP-475
8XC196NT
24-bit
0A000h
16-bit
0FFA000h
1000h
011000h
MCS-96
ESPC
mcs96 family
8xc196kb memory external
8X96BH
27C256
8XC196KC
8XC196KR
8XC196KB
AP475
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N28F512-150
Abstract: 26F512 intel PLD
Text: INTEL CORP MENORY/PLP/ irrte1 5bE I • 182i,l?t, D07fa233 D27 28F512 512K (64K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jLts Typical Byte-Program — 1 Second Chip-Program
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D07fa233
28F512
-32-L
P28F512-120
P28F512-150
N28F512-120
N28F512-150
TP28F512-120
TN28F512-120
ER-20,
26F512
intel PLD
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intel Automotive
Abstract: AP28F512-120
Text: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -40°C to + 125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ¡is Typical Byte-Program — 1 Second Chip-Program
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A28F512
AP28F512-150
AP28F512-120
AN28F512-150
AN28F512-120
ER-20,
ER-23,
RR-60,
AP-316,
intel Automotive
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intel 28f512
Abstract: 28F512 Intel Small Outline Package Guide how to program in eprom TN28F512-120 80C166 80C186 N28F512 P28F512 intel BIOS 32 Pin PLCC
Text: 512K 64K X 8 28F512 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V +5% VPP ■ High-Performance Read
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28F512
intel 28f512
28F512
Intel Small Outline Package Guide
how to program in eprom
TN28F512-120
80C166
80C186
N28F512
P28F512
intel BIOS 32 Pin PLCC
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Untitled
Abstract: No abstract text available
Text: A28F512 512K 64K x 8 CMOS FLASH MEMORY (A u to m o tiv e ) m Extended Automotive Temperature Range: -4 0 °C to +125°C • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program
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A28F512
AP28F512-150
AN28F512-150
AP28F512-120
AN28F512-120
ER-20,
ER-23,
A28F512
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intel 28f512
Abstract: 28F512 80C166 80C186 P28F512
Text: 512K 64K X 8 28F512 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V +5% VPP ■ Command Register Architecture for
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28F512
intel 28f512
28F512
80C166
80C186
P28F512
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