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    28F210 Price and Stock

    MIL SPEC CONNECT SFSD-05-28-F-21.00-DR-NDX

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    DigiKey SFSD-05-28-F-21.00-DR-NDX 10
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    Samtec Inc SFSD-05-28-F-21.00-DR-NDX

    DOUBLE ROW DISCRETE WIRE ASSEMBL
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    DigiKey SFSD-05-28-F-21.00-DR-NDX Bag 1
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    Mouser Electronics SFSD-05-28-F-21.00-DR-NDX
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    Master Electronics SFSD-05-28-F-21.00-DR-NDX
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    Samtec Inc SFSD-20-28-F-21.00-DR-NDX

    Cable Assembly Discrete Wire 0.533m 40 POS Discrete Wire Housing to 40 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: SFSD-20-28-F-21.00-DR-NDX)
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    Macronix International Co Ltd MX28F2100TTC-12C4

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    Bristol Electronics MX28F2100TTC-12C4 5
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    Shenzhen Wisva Optoelectronics Co.,Ltd HH-SNW528F210W12-COB IP65

    COB LED tape; white neutral; LED/m: 528; 10mm; IP65; 10W/m; 12VDC
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    TME HH-SNW528F210W12-COB IP65 265 5
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    28F210 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28F210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    28F210 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MX28F2100B

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY 28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current


    Original     		MX28F2100B 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte MX28F2100B PDF

    MX28F2100T

    Abstract: MX28F2100TTC90
    Text: Introduction Selection Guide PRELIMINARY 28F2100T 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current


    Original     		MX28F2100T 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte MX28F2100T MX28F2100TTC90 PDF

    28f210

    Abstract: TMS28F210
    Text: 28F210 65536 BY 16-BIT FLASH MEMORY SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997 D D D D 6 5 DQ12 DQ11 DQ10 DQ9 DQ8 VSS NC DQ7 DQ6 DQ5 DQ4 4 3 W NC A15 A14 2 1 44 43 42 41 40 7 39 8 38 9 37 10 36 11 35 12 34 13 33 14 32 15 31 16 30 17 29 A13 A12 A11


    Original     		TMS28F210 16-BIT SMJS210D 16-Bits 28F210-10 28customer 28f210 TMS28F210 PDF

    28F002-T

    Abstract: No abstract text available
    Text: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with 28F2100T 28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package


    Original     		28F200-T 28F200-B 28F002-T 28F002-B 28F020 MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P 28F002-T PDF

    MX28F2100T

    Abstract: No abstract text available
    Text: INDEX PRELIMINARY 28F2100T 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 uA maximum standby current • Programming and erasing voltage 12V ± 7%


    Original     		MX28F2100T 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte PM0383 MX28F2100T PDF

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


    Original     		71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732 PDF

    28F2100

    Abstract: block diagram for automatic room power control MX28F2100B 28F2100B-70
    Text: PRELIMINARY 28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 7%


    Original     		MX28F2100B 8/128K 144x8/131 072x16 70/90/120ns 100uA 16K-Byte 96K-Byte 128K-Byte PM0382 28F2100 block diagram for automatic room power control MX28F2100B 28F2100B-70 PDF

    27C4002

    Abstract: 27C210A M5M27C102J 32 pin plcc socket to dil AT27HC1024 AT27C1024L-J AT27C1024 AT27LV1024 AD44 AD60
    Text: PRODUCT DATA SHEET AD44 Farnell 479-858 and AD60 Package Converters for Word Wide EPROMs (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD44 44 40 08 P .6 Clamshell Product Code Pins on skt Pins on Base Wiring


    Original     		Am27C1024- Am27C1024-J Am27C1024-L Am27C2048-J Am27C2048-L Am27C4096-J Am27C4096-L 27C4002 27C210A M5M27C102J 32 pin plcc socket to dil AT27HC1024 AT27C1024L-J AT27C1024 AT27LV1024 AD44 AD60 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 28F2100T 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 uA maximum standby current • Programming and erasing voltage 12V ± 7%


    Original     		MX28F2100T 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte PM0383 PDF

    28F220

    Abstract: aish
    Text: M 28F210 M 28F220 S G S -1 H 0 M S 0 N 5 7 . EO glS(a i[Li re©li!!lD(gi 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA • DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


    OCR Scan     		28F210 28F220 TSOP48 or48K 15/20m M28F210, M28F220 28F220 aish PDF

    27A6

    Abstract: No abstract text available
    Text: 28F210 1048576-BIT FLASH MEMORY I SMJS210B - DECEMBER 1892 - REVISED JUNE 1995 N PACKAGE TOP VIE W Pin Compatible With Existing 1-Megabit EPROMs All Inputs/Outputs TTL Compatible Vcc Tolerance ±10% Maximum Access/Minimum Cycle Time ’28F210-10 100 ns


    OCR Scan     		TMS28F210 1048576-BIT 28F210-10 28F210-12 28F210-15 28F210-17 168-Hour 1048576-bit, 0020h 27A6 PDF

    MP 1048 EM

    Abstract: 28f210
    Text: 28F210 1 048576-BIT FLASH MEMORY SMJS21 OC-D E C EM BE R 1 9 9 2 - REVISED MAY 1996 FN PACKAGE TOP VIE W O r g an iz a t io n . . . 64K x 1 6 Flash M e m o r y Pi n C o m p a t i b l e Wi t h E x i s t i n g 1 - M e g a b i t EPROMs All I n p u t s / O u t p u t s T T L C o m p a t i b l e


    OCR Scan     		TMS28F210 048576-BIT SMJS21 MP 1048 EM 28f210 PDF

    Untitled

    Abstract: No abstract text available
    Text: S G S -1 H 0 M S 0 N 5 7 . » « m i » « ® 28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


    OCR Scan     		M28F210 M28F220 TSOP56 20/25mATypical 7T2T237 M28F210, PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: [ P : R iiy [ lD Î M [ F S Y M X IC M 28F2100B 2M-BIT[256K x 8 /1 2BK x 1 6 CMOS FLASH MEMORY FEATURES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100 nAmaximum standby current Programming and erasing voltage 12V + 7%


    OCR Scan     		MX28F2100B 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte DDD1104 MX28F2100BMC-70 MX28F21OOBMC-90 PDF

    28F220

    Abstract: 3542J 3D IC
    Text: 5 7 . S C S -T H O M S O N 28F210 M28F220 •LI 2 Megabit x8 or x16, Block Erase FLASH MEMORY PR ELIM IN A R Y DATA ■ DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


    OCR Scan     		M28F210 M28F220 TSOP48 15/20m 28F220 3542J 3D IC PDF

    Untitled

    Abstract: No abstract text available
    Text: in t û l PBEyaSIOKlÄIR' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCc = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture — 28F200BX-TL, 28F200BX-BL


    OCR Scan     		28F200BX-TL/BL, 28F002BX-TL/BL x8/x16 28F200BX-TL, 28F200BX-BL 16-bit 32-bit 28F002BX-TL, 28F002BX-BL 16-KB PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEL CORP {MEMORY/PLD/ in tc J L7E I> • 4fl2fal7fci D 0 f l n t , 2 WSEOBSIOIiflM' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY ■ Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V


    OCR Scan     		28F200BX-TL/BL, 28F002BX-TL/BL x8/x16 28F200BX-TL, 28F200BX-BL 16-bit 32-bit 28F002BX-TL, 28F002BX-BL 16-KB PDF

    TMS28F210

    Abstract: No abstract text available
    Text: 28F210 65536 BY 16-BIT FLASH MEMORY . • • • • • • • • • • • SMJS21OP- DECEMBER 1992 - REVISED AUGUST 1997 Organization . . . 65S36 by 16-Bits Pin Compatible With Existing 1-Megabit EPROMs


    OCR Scan     		SMJS21OP- TMS28F210 16-BIT 65S36 16-Bits 28F210-10 28F210-12 28F210-15 28F210-17 168-Hour PDF

    block diagram for automatic room power control layout

    Abstract: 28F2100B
    Text: M X 2 8 F 2 1 OOB 2 M -B IT 2 5 6 K X 8 / 1 2 8 K X T6 CM OS FLASH M EM O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 100[iAmaximum standby current • Programming and erasing voltage 12V + 7%


    OCR Scan     		144x8/131 072x16 70/90/120ns 50jas 16K-Byte 96K-Byte 128K-Byte 100mA X28F2100B block diagram for automatic room power control layout 28F2100B PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F210 65536 BY 16-BIT FLASH MEMORY SMJS210D - DECEMBER 1992 - REVISED AUGUST 1997 • • • • • • FN PACKAGE TOP VIEW CO ^ LO a a a 8: o 8 o £ 2 Q O OIUJ > z > l§ z < < m t —t f - i r - i i —i n i —i r - i i —i r - i r - 1 s— 6 5 4 3 2 1 44 43 42 41 40


    OCR Scan     		TMS28F210 16-BIT SMJS210D 16-Bits 28F210-10 28F210-12 28F21Q-15 28F210-17 168-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 M -B IT 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S F L A S H M E M O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current • Programming and erasing voltage 12V ± 7%


    OCR Scan     		144x8/131 072x16 70/90/120ns 10OnAmaximum 16K-Byte 96K-Byte 128K-Byte MX28F2100T 44-PIN 48-PIN PDF

    27C4002

    Abstract: 27C1024 27HC1024 28f210 27c516 27C2048 27C220 27C4096 Hitachi j-16 27C210l
    Text: AD44/60 file:///AD44.HTM t I P pro duc t d a ta sh eet AD44 and AD60 Package Converters for Word Wide EPROMs PLCC jProduct Code Pins on skt Pins on Base ¡Wiring Code Package Base pitch" Miscellaneous I P ~ j ~ ~7<T " ClamsheÎl ^ AD44 : 44 ~: 40 j~ ~ .08


    OCR Scan     		AD44/60 ///AD44 27C1024, 27C2048, 27C4096 27C516, 27HC1024, AD44/60 27C4002 27C1024 27HC1024 28f210 27c516 27C2048 27C220 27C4096 Hitachi j-16 27C210l PDF

    27A6

    Abstract: A424J
    Text: 28F210 1 048 576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM JS210-DEC EMBER 1992 O rganization. . . 64K x 16 Flash Memory N PACKAGEt Pin Compatible with Existing 1-Megabit EPROMs All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time:


    OCR Scan     		TMS28F210 576-BIT JS210-DEC 28F210-10 28F210-12 28F210-15 28F210-17 168-Hour A0-A15 DQODQ15 27A6 A424J PDF