28F2100 Search Results

MX28F2100B

Contextual Info: Introduction Selection Guide PRELIMINARY 28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

MX28F2100T

Abstract: MX28F2100TTC90
Contextual Info: Introduction Selection Guide PRELIMINARY 28F2100T 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

Contextual Info: \p M E u m m h M Y IW K IC M X 2 8 F 2 1 OOB 2M -B IT 256K x 8 / 1 28 K x 1 6 CM OS FLASH M EM ORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current

Contextual Info: [ P : R iiy [ lD Î M [ F S Y M X IC M 28F2100B 2M-BIT[256K x 8 /1 2BK x 1 6 CMOS FLASH MEMORY FEATURES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100 nAmaximum standby current Programming and erasing voltage 12V + 7%

Contextual Info: in t û l PBEyaSIOKlÄIR' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCc = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture — 28F200BX-TL, 28F200BX-BL

Contextual Info: INTEL CORP {MEMORY/PLD/ in tc J L7E I> • 4fl2fal7fci D 0 f l n t , 2 WSEOBSIOIiflM' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY ■ Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V

block diagram for automatic room power control layout

Abstract: 28F2100B
Contextual Info: M X 2 8 F 2 1 OOB 2 M -B IT 2 5 6 K X 8 / 1 2 8 K X T6 CM OS FLASH M EM O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 100[iAmaximum standby current • Programming and erasing voltage 12V + 7%

28F002-T

Contextual Info: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with 28F2100T 28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package

MX28F2100T

Contextual Info: INDEX PRELIMINARY 28F2100T 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 uA maximum standby current • Programming and erasing voltage 12V ± 7%

Contextual Info: 2 M -B IT 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S F L A S H M E M O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current • Programming and erasing voltage 12V ± 7%

28F2100

Abstract: block diagram for automatic room power control MX28F2100B 28F2100B-70
Contextual Info: PRELIMINARY 28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 7%

Contextual Info: PRELIMINARY 28F2100T 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 uA maximum standby current • Programming and erasing voltage 12V ± 7%

GE capacitor 28f

Contextual Info: in te ! 28F2Q0BX-TL/BL, 28F002BX-TL/BL 2 MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY H Low Voltage Operation fo r Very Low Power Portable Applications — VCc = 3.3V + 0 .3 V eg V e ry H ig h -P e rfo rm a n c e R ead — 150 ns M axim um A c ce ss T im e

MX-1610

Abstract: intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000
Contextual Info: APPLICATION NOTES 1. TYPICAL NONVOLATILE MEMORY APPLICATION 2.) ON-BOARD PROGRAMMING DESIGN CONSIDERATIONS FOR THE MX26C512A 3.) ON-BOARD PROGRAMMING OF THE MX26C1000A 4.) IN-CIRCUIT PROGRAMMING OF THE MX26C1024A 5.) 2M FLASH MEMORY 6.) 8M FLASH MEMORY 7.) MX25L4004A 4M-BIT 4MX1) CMOS SERIAL FLASH MEMORY

80L188EB

Contextual Info: Â W Â K K g i 0K11F@ 1^IM ]Ä?0 K1 in te i 28F200BX-TL/BL, 28F002BX-TL/BL 2 MBIT 128K x 16,256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCC = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture

Contextual Info: MXIC ip ^ iy Ë a iM Â i^ Y M X 2 8 F2 1 OOT 2 M - B I T 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S FLASH M E M O R Y FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current

TCS 5513

Abstract: MX28F2100TTC
Contextual Info: i\/!X2BF21 OOT 2M-BITC256K x 8 / 1 2 8 K x 1 6 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - lOOnAmaximum standby current • Programming and erasing voltage 12V + 7%

h5ra

Abstract: NTE 5432
Contextual Info: IV IX 2 S F 2 1 O O B 2M BIT[256K x 8 / 1 28K x 1 6} CMOS FLASH MEMORY FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current Programming and erasing voltage 12V ± 7%