Untitled
Abstract: No abstract text available
Text: c1 Obsolete C1 ECR-13-014907 KKB 28APR14
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ECR-13-014907
28APR14
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Untitled
Abstract: No abstract text available
Text: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)
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SiS407ADN
SiS407ADN-T1-GE3electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time
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J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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UH1B
Abstract: No abstract text available
Text: UH1B, UH1C, UH1D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Oxide planar chip junction • Ultrafast recovery times for high frequency • Meets MSL level 1, per J-STD-020,
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J-STD-020,
AEC-Q101
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
UH1B
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Untitled
Abstract: No abstract text available
Text: 3KASMC10A thru 3KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology
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3KASMC10A
3KASMC43A
J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiP32451, SiP32452, SiP32453 Vishay Siliconix 0.9 V to 2.5 V, 55 m Load Switch in WCSP4 DESCRIPTION FEATURES SiP32451, SiP32452 and SiP32453 are n-channel integrated high side load switches that operate from 0.9 V to 2.5 V input voltage range. SiP32451, SiP32452 and SiP32453 have low input logic
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SiP32451
SiP32452
SiP32453
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Si2372DS
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SSA33L, SSA34 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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SSA33L,
SSA34
J-STD-020,
AEC-Q101
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SE10DB, SE10DD, SE10DG, SE10DJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES eSMP Series TO-263AC SMPD • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Oxide planar chip junction
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SE10DB,
SE10DD,
SE10DG,
SE10DJ
O-263AC
AEC-Q101
J-STD-020,
SE10DX
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: Si2392ADS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) MAX. ID (A) a 0.126 at VGS = 10 V 3.1 0.144 at VGS = 6 V 2.9 0.189 at VGS = 4.5 V 2.6 Qg (TYP.) 2.9 nC SOT-23 (TO-236) • TrenchFET power MOSFET
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Si2392ADS
OT-23
O-236)
Si2392ADS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Package Information
Abstract: WCSP4
Text: Package Information www.vishay.com Vishay Siliconix WCSP4: 4 Bumps 2 x 2, 0.4 mm pitch, 208 m bump height, 0.8 mm x 0.8 mm die size Mark on backside of die 1 A 2 1 2 W A B A B B e D 4 x Ø 0.15 to Ø 0.20 Solder mask dia. - Pad diameter + 0.1 0.4 e 4xØb
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SAC396
S14-0844-Rev.
28-Apr-14
Package Information
WCSP4
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Untitled
Abstract: No abstract text available
Text: SiP32467, SiP32468 www.vishay.com Vishay Siliconix 50 mΩ, Slew Rate Controlled Load Switch in WCSP DESCRIPTION FEATURES The SiP32467 and SiP32468 are slew rate controlled integrated high side load switches that operate in the input voltage range from 1.2 V to 5.5 V.
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SiP32467
SiP32468
2002/95/EC.
2002/95/EC
2011/65/EU.
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SS14 DIODE
Abstract: SS14
Text: SS12, SS13, SS14, SS15, SS16 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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PDF
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J-STD-020,
AEC-Q101
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SS14 DIODE
SS14
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Untitled
Abstract: No abstract text available
Text: SS32, SS33, SS34, SS35, SS36 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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J-STD-020,
DO-214AB
AEC-Q101
40electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiP32460, SiP32461, SiP32462 www.vishay.com Vishay Siliconix 50 mΩ, Slew Rate Controlled Load Switch in WCSP DESCRIPTION FEATURES The SiP32460, SiP32461, and SiP32462 are slew rate controlled integrated high side load switches that operate over the input voltage range from 1.2 V to 5.5 V.
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SiP32460
SiP32461
SiP32462
SIP32461,
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Untitled
Abstract: No abstract text available
Text: Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.047 at VGS = -4.5 V -4 0.080 at VGS = -2.7 V -4 0.090 at VGS = -2.5 V • TrenchFET power MOSFET Qg (TYP.) • PWM optimized
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Si3443DDV
Si3443DDV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) d 0.0062 at VGS = -10 V -25.3 VDS (V) -30 0.0074 at VGS = -6 V -23.2 0.0092 at VGS = -4.5 V -20.8 Qg (TYP.) 54 nC SO-8 Single D 8 D 7 D 6
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Si4143DY
Si4143DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: RoHS F1AF THRU F1MF COMPLIANT 快恢复整流二极管 Fast Recovery Rectifier Diode •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 1.0A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高
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S-S032
28-Apr-14
21yangjie
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Untitled
Abstract: No abstract text available
Text: SSC53L, SSC54 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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SSC53L,
SSC54
J-STD-020,
DO-214AB
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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D10JB
Abstract: No abstract text available
Text: D10JB05 THRU D10JB100 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 10A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability
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D10JB05
D10JB100
S-B017
28-Apr-14
21yangjie
D10JB
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Untitled
Abstract: No abstract text available
Text: D20JA05 THRU D20JA100 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸 Outline Dimensions and Mark 20A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability
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D20JA05
D20JA100
S-B019
28-Apr-14Â
21yangjie
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER METAL STRIP RESISTORS WSHM2818 Power Metal Strip® Resistors, High Power 7 W , Low Value (Down to 0.001 Ω), Surface Mount KEY BENEFITS • • • • Improved thermal management incorporated into design
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WSHM2818
WSHM2818
28-Apr-14
VMN-PT0284-1410
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Untitled
Abstract: No abstract text available
Text: S5A, S5B, S5D, S5G, S5J, S5K, S5M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current
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J-STD-020,
DO-214AB
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SS22S, SS23S, SS24S www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability
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SS22S,
SS23S,
SS24S
J-STD-020,
DO-214AC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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