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    Vishay DaTE CODE tsop-6

    Abstract: si3410
    Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 si3410

    95xxx

    Abstract: si3434 si3495
    Text: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si3495DV 2002/95/EC Si3495DV-T1-E3 Si3495DV-T1-GE3 95xxx 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 95xxx si3434 si3495

    Untitled

    Abstract: No abstract text available
    Text: Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, b 0.026 at VGS = 10 V 8 0.032 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3424CDV 2002/95/EC Si3424CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si3433CD

    Abstract: SI3433CDV-T1 Vishay DaTE CODE tsop-6 Si3433CDV
    Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si3433CDV Si3433CDV-T1-E3 Si3433CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si3433CD SI3433CDV-T1 Vishay DaTE CODE tsop-6

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    dg468dv

    Abstract: No abstract text available
    Text: DG467, DG468 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG467 and DG468 are dual supply single-pole/singlethrow SPST switches. On resistance is 10  maximum and flatness is 2  max over the specified analog signal range.


    Original     		PDF DG467, DG468 DG467 DG468 DG467/468 2011/65/EU 2002/95/EC. 2002/95/EC dg468dv

    Untitled

    Abstract: No abstract text available
    Text: DG447, DG448 Vishay Siliconix Low Power, High Voltage SPST Analog Switches DESCRIPTION FEATURES The DG447, DG448 are dual supply single-pole/single-throw SPST switches. On resistance is 25 W maximum and flatness is 2.2 W max over the specified analog signal range.


    Original     		PDF DG447, DG448 DG448 DG477, DG477 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		PDF Si3879DV 2002/95/EC Si3879DV-T1-E3 Si3879DV-T1l 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3585CDV Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () Max. • TrenchFET Power MOSFETs • 100 % Rg Tested • Material categorization: For definitions of compliance please see


    Original     		PDF Si3585CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TSOP 173B

    Abstract: No abstract text available
    Text: Si3493BDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3493BDV 2002/95/EC Si3493BDV-T1-E3 Si3493BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP 173B

    tsop6 package

    Abstract: No abstract text available
    Text: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3483CDV 2002/95/EC Si3483CDV-T1-E3 Si3483CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 tsop6 package

    Untitled

    Abstract: No abstract text available
    Text: Si3853DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus


    Original     		PDF Si3853DV 2002/95/EC Si3853DV-T1-E3 Si3853DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3424DV 2002/95/EC Si3424DV-T1-E3 Si3424DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3909DV 2002/95/EC Si3909DV-T1-E3 Si3909DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447CDV 2002/95/EC Si3447CDV-T1-E3 Si3447CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si3911

    Abstract: SI3911DV
    Text: Si3911DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.145 at VGS = - 4.5 V - 2.2 - 20 0.200 at VGS = - 2.5 V - 1.8 0.300 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3911DV 2002/95/EC Si3911DV-T1-E3 Si3911DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si3911

    si3430

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


    Original     		PDF Si3430DV 2002/95/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3430

    Untitled

    Abstract: No abstract text available
    Text: Si3590DV Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.077 at VGS = 4.5 V 3 0.120 at VGS = 2.5 V 2 0.170 at VGS = - 4.5 V -2 0.300 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si3590DV 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. G DIST R E V IS IO N S 50 LTR DESCRIPTION REV PER 0G3H— 0 0 5 5 — 04 DATE DWN APVD 27FEB04 JR MS D D ±.005 ,405 DIA. — o G


    OCR Scan     		PDF 27FEB04 L-300387 31MAR2000 20APR01

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 50 LTR DESCRIPTION REV PER 0G3H— 0 0 5 7 — 04 DATE DWN APVD 27FEB04 JR MS D D + .0 2 5 .925 + .0 2 5 1.565


    OCR Scan     		PDF 27FEB04 31MAR2000 20APR01

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G3H— 0 0 5 7 — 04 DWN 27FEB04 APVD JR MS D D + .02 5 + .02 5 — .585


    OCR Scan     		PDF 27FEB04 31MAR2000 20APR01

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G3H— 0 0 5 5 — 04 D DWN 27FEB04 APVD JR MS D TTTT CDLDR CDDED DRANGE


    OCR Scan     		PDF 27FEB04 31MAR2000 20APR01

    L2-40387

    Abstract: 40387
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST 50 R E V IS IO N S LTR DESCRIPTION DATE REV PER 0G3H— 0 0 5 5 — 04 DWN 27FEB04 APVD JR MS D D +.005 +.030 4,950 +.010


    OCR Scan     		PDF 27FEB04 L2-40387 31MAR2000 20APR01 40387

    17PM

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G3A— 0 0 5 7 — 04 DWN 27FEB04 APVD JR MS D D +.005 ,405 DIA, +.015 1,020


    OCR Scan     		PDF 27FEB04 548DIA, 31MAR2000 20APR01 17PM