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    SI3430DV Search Results

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    SI3430DV Price and Stock

    Vishay Siliconix SI3430DV-T1-E3

    MOSFET N-CH 100V 1.8A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3430DV-T1-E3 Cut Tape 10,852 1
    • 1 $1.79
    • 10 $1.137
    • 100 $1.79
    • 1000 $0.55158
    • 10000 $0.55158
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    SI3430DV-T1-E3 Digi-Reel 10,852 1
    • 1 $1.79
    • 10 $1.137
    • 100 $1.79
    • 1000 $0.55158
    • 10000 $0.55158
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    SI3430DV-T1-E3 Reel 9,000 3,000
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    • 10000 $0.48619
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    Bristol Electronics SI3430DV-T1-E3 3,024
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    ES Components SI3430DV-T1-E3
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    Vishay Siliconix SI3430DV-T1-BE3

    MOSFET N-CH 100V 1.8A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3430DV-T1-BE3 Cut Tape 4,854 1
    • 1 $1.79
    • 10 $1.137
    • 100 $1.79
    • 1000 $0.55158
    • 10000 $0.55158
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    SI3430DV-T1-BE3 Digi-Reel 4,854
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    SI3430DV-T1-BE3 Reel 3,000 3,000
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    • 10000 $0.48619
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    Vishay Siliconix SI3430DV-T1-GE3

    MOSFET N-CH 100V 1.8A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3430DV-T1-GE3 Reel 3,000
    • 1 -
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    SI3430DV-T1-GE3 Digi-Reel 1
    • 1 $1.79
    • 10 $1.137
    • 100 $1.79
    • 1000 $0.55158
    • 10000 $0.55158
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    SI3430DV-T1-GE3 Cut Tape 1
    • 1 $1.79
    • 10 $1.137
    • 100 $1.79
    • 1000 $0.55158
    • 10000 $0.55158
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    Vishay Intertechnologies SI3430DV-T1-BE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SI3430DV-T1-BE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI3430DV-T1-BE3 Reel 3,000
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    Newark SI3430DV-T1-BE3 Cut Tape 3,000
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    • 1000 $0.706
    • 10000 $0.706
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    SI3430DV-T1-BE3 Reel 3,000
    • 1 -
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    • 10000 $0.479
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    TTI SI3430DV-T1-BE3 Reel 12,000 3,000
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    Vishay Intertechnologies SI3430DV-T1-GE3

    TSOP6 SINGLE 100V N-CH TRENCH - Tape and Reel (Alt: SI3430DV-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI3430DV-T1-GE3 Reel 13 Weeks 3,000
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    Mouser Electronics SI3430DV-T1-GE3 2,871
    • 1 $1.4
    • 10 $0.948
    • 100 $0.666
    • 1000 $0.515
    • 10000 $0.45
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    Newark SI3430DV-T1-GE3 Cut Tape 3,000
    • 1 -
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    • 1000 $0.706
    • 10000 $0.706
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    SI3430DV-T1-GE3 Reel 3,000
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    • 10000 $0.479
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    TTI SI3430DV-T1-GE3 Reel 3,000
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    EBV Elektronik SI3430DV-T1-GE3 14 Weeks 3,000
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    SI3430DV Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si3430DV Vishay Intertechnology N-Channel 100-V (D-S) MOSFET Original PDF
    SI3430DV Vishay Siliconix N-Channel 100-V (D-S) MOSFET Original PDF
    Si3430DV SPICE Device Model Vishay N-Channel 100-V (D-S) MOSFET Original PDF
    SI3430DV-T1 Vishay Intertechnology N-Channel 100-V (D-S) MOSFET Original PDF
    SI3430DV-T1 Vishay Siliconix N-Channel 100-V (D-S) MOSFET Original PDF
    SI3430DV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 1.8A 6-TSOP Original PDF
    SI3430DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 1.8A 6-TSOP Original PDF

    SI3430DV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


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    Si3430DV 2002/96/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 18-Jul-08 PDF

    Siliconix

    Abstract: Si3430DV Si3430DV SPICE Device Model
    Text: SPICE Device Model Si3430DV N-Channel 100-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


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    Si3430DV Siliconix Si3430DV SPICE Device Model PDF

    si3430

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


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    Si3430DV 2002/95/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3430 PDF

    SI3430DV-T1-E3

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


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    Si3430DV 2002/95/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 11-Mar-11 PDF

    Si3430DV

    Abstract: Si3430DV SPICE Device Model
    Text: SPICE Device Model Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si3430DV 16-Apr-01 Si3430DV SPICE Device Model PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


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    Si3430DV 2002/95/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3430DV New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.170 @ VGS = 10 V 2.4 0.185 @ VGS = 6.0 V 2.3 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    Si3430DV S-01280--Rev. 19-Jun-00 PDF

    Si3430DV-T1

    Abstract: Si3430DV
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES rDS(on) (W) ID (A) 0.170 @ VGS = 10 V 2.4 0.185 @ VGS = 6.0 V 2.3 D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G


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    Si3430DV Si3430DV-T1 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


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    Si3430DV 2002/95/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 11-Mar-11 PDF

    Si3430DV

    Abstract: Si3430DV-T1
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES rDS(on) (W) ID (A) 0.170 @ VGS = 10 V 2.4 0.185 @ VGS = 6.0 V 2.3 D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G


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    Si3430DV Si3430DV-T1 S-31725--Rev. 18-Aug-03 PDF

    AN609

    Abstract: Si3430DV 102447
    Text: Si3430DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    Si3430DV AN609 01-Mar-06 102447 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


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    Si3430DV 2002/95/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si3430DV

    Abstract: Si3430DV-T1-E3 Si3430DV-T1-GE3 Si3430DV-T1 SI3430
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested


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    Si3430DV 2002/95/EC Si3430DV-T1-E3 Si3430DV-T1-GE3 18-Jul-08 Si3430DV-T1 SI3430 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES rDS(on) (W) ID (A) 0.170 @ VGS = 10 V 2.4 0.185 @ VGS = 6.0 V 2.3 D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G


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    Si3430DV Si3430DV-T1 18-Jul-08 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    coupler MOSFET DRIVER application note

    Abstract: MOSFET sot23-6 68A 35V capacitor GA243DR7E2472MW01L TL431 sot23 ceramic capacitor, .1uF 36V 3A zener MAX9053 TL431 SOT-232
    Text: AUTOMOTIVE Sep 01, 2003 A Compact 36-72V DC Input, 3.3V/10A Output Power Supply A compact power supply that provides a regulated 3.3V at currents up to 10A using the MAX5052A PWM controller is described here. This power supply operates from -36V to -72V and uses synchronous rectification to


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    6-72V V/10A MAX5052A OT23-5 TL431IDBVR UCSP/SOT23 MAX9053AEUA PS2913-1-M MAX6501UKP105 coupler MOSFET DRIVER application note MOSFET sot23-6 68A 35V capacitor GA243DR7E2472MW01L TL431 sot23 ceramic capacitor, .1uF 36V 3A zener MAX9053 TL431 SOT-232 PDF

    LT37562

    Abstract: LT3755-2 power supply driver led 30w schematic LT3756 37562 30W led LT3755 lt3756-2 MBRS3100T3 lfkb
    Text: LT3756/LT3756-1/LT3756-2 100VIN, 100VOUT LED Controller Features Description 3000:1 True Color PWM Dimming Wide Input Voltage Range: 6V to 100V Output Voltage Up to 100V Constant-Current and Constant-Voltage Regulation 100mV High Side Current Sense Drives LEDs in Boost, Buck Mode, Buck-Boost Mode,


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    LT3756/LT3756-1/LT3756-2 100VIN, 100VOUT 100mV 100kHz LT3756-2) LT3756-1) 16-Lead LT3P16E LT3518 LT37562 LT3755-2 power supply driver led 30w schematic LT3756 37562 30W led LT3755 lt3756-2 MBRS3100T3 lfkb PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


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    Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 PDF

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


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    2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent PDF

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS PDF

    ceramic capacitor, .1uF

    Abstract: diode zener c23 Ceramic capacitor 0,1uF 10V power supply 100v 30a schematic DIODE SCHOTTKY 30V 200MA SOT23 MAX5052 MAX5052A MAX6501UKP105 MAX9001 ceramic capacitor 47nf
    Text: Maxim > App Notes > AUTOMOTIVE Keywords: MAX5052, pwm controller, synchronous rectification, forward converter, high efficiency, power supply, power supplies, forward converter, input reverse voltage protection, pulse width modulation, controllers Sep 01, 2003


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    MAX5052, 6-72V V/10A MAX5052A MAX5048: MAX5052: MAX5052A: MAX6501: MAX9001: ceramic capacitor, .1uF diode zener c23 Ceramic capacitor 0,1uF 10V power supply 100v 30a schematic DIODE SCHOTTKY 30V 200MA SOT23 MAX5052 MAX5052A MAX6501UKP105 MAX9001 ceramic capacitor 47nf PDF