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    Vishay Siliconix SI3447CDV-T1-E3

    MOSFET P-CH 12V 7.8A 6TSOP
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    DigiKey SI3447CDV-T1-E3 Digi-Reel 1
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    Vishay Siliconix SI3447CDV-T1-GE3

    MOSFET P-CH 12V 7.8A 6TSOP
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    SI3447CDV-T1-GE3 Digi-Reel 1
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    Vishay Intertechnologies SI3447CDVT1GE3

    P-CHANNEL 12-V (D-S) MOSFET Small Signal Field-Effect Transistor, 7.8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI3447CDVT1GE3 3,000
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    SI3447CDV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI3447CDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 7.8A 6TSOP Original PDF
    SI3447CDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 7.8A 6-TSOP Original PDF

    SI3447CDV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3447CDV-T1-GE3

    Abstract: No abstract text available
    Text: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447CDV 2002/95/EC Si3447CDV-T1-E3 Si3447CDV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447CDV 2002/95/EC Si3447CDV-T1-E3 Si3447CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI3447CDV

    Abstract: No abstract text available
    Text: New Product Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 VDS (V) - 12 • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si3447CDV Si3447CDV-T1-E3 08-Apr-05

    AN609

    Abstract: No abstract text available
    Text: Si3447CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3447CDV AN609 27-Nov-07

    SI3447CDV

    Abstract: No abstract text available
    Text: New Product Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 VDS (V) - 12 • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si3447CDV Si3447CDV-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447CDV 2002/95/EC Si3447CDV-T1-E3 Si3447CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    81212

    Abstract: No abstract text available
    Text: SPICE Device Model Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3447CDV 18-Jul-08 81212

    Si3447BDV

    Abstract: Si3447BDV-T1 Si3447BDV-T1-E3 SI3447CDV
    Text: Specification Comparison Vishay Siliconix Si3447CDV vs. Si3447BDV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3447CDV-T1-E3 replaces Si3447BDV-T1-E3 Si3447CDV-T1-E3 replaces Si3447BDV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si3447CDV Si3447BDV Si3447CDV-T1-E3 Si3447BDV-T1-E3 Si3447BDV-T1 06-Feb-08

    Untitled

    Abstract: No abstract text available
    Text: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 ID (A)a RDS(on) (Ω) 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447CDV 2002/95/EC Si3447CDV-T1-E3 Si3447CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447CDV 2002/95/EC Si3447CDV-T1-E3 Si3447CDV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447CDV 2002/95/EC Si3447CDV-T1-E3 Si3447CDV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3447CDV www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si3447CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477