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    Diode HER 507

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Diode HER 507

    Si9407BDY-T1-GE3

    Abstract: Si9407BDY Si9407BDY-T1-E3
    Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 11-Mar-11

    Si4410BDY

    Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3
    Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4423DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 4.5 V - 14 0.009 at VGS = - 2.5 V - 13 0.0115 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4423DY 2002/95/EC Si4423DY-T1-E3 Si4423DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4942DY 2002/95/EC Si4942DY-T1-E3 Si4942DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V


    Original     		PDF Si4500BDY 2002/95/EC Si4500BDY-T1-E3 Si4500BDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4943CDY 2002/95/EC Si4943CDY-T1-E3 Si4943CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9926CDY 2002/95/EC Si9926CDY-T1-E3 Si9926CDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 11-Mar-11

    Marking Code AC

    Abstract: No abstract text available
    Text: Si3446ADV Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES RDS(on) (Ω) ID (A)a 0.037 at VGS = 4.5 V 6 0.065 at VGS = 2.5V 6 Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3446ADV 2002/95/EC Si3446ADV-T1-E3 Si3446ADV-T1-GE3 18-Jul-08 Marking Code AC

    Si9936BDY

    Abstract: Si9936BDY-T1-E3
    Text: Si9936BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.035 at VGS = 10 V 6.0 0.052 at VGS = 4.5 V 4.9 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si9936BDY 2002/95/EC Si9936BDY-T1-E3 Si9936BDY-T1-GE3 18-Jul-08

    Si4464DY

    Abstract: Si4464DY-T1-E3 Si4464DY-T1-GE3 720-51 72051
    Text: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg


    Original     		PDF Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 18-Jul-08 720-51 72051

    Si4412DY

    Abstract: No abstract text available
    Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V


    Original     		PDF Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4963BDY 2002/95/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V


    Original     		PDF Si4500BDY 2002/95/EC Si4500BDY-T1-E3 Si4500BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4943CDY 2002/95/EC Si4943CDY-T1-E3 Si4943CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N06-6m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 60 0.006 at VGS = 10 V 90d 78.5 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUP90N06-6m0P 2002/95/EC O-220AB SUP90N06-6m0P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4488DY Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4488DY 2002/95/EC Si4488DY-T1-E3 Si4488DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447BDV 2002/95/EC Si3447BDV-T1-E3 Si3447BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4490DY 2002/95/EC Si4490DY-T1-E3 Si4490DY-T1-GE3 20electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si4480DY Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.035 at VGS = 10 V 6.0 0.040 at VGS = 6.0 V 5.5 • Halogen-free According to IEC 61249-2-21 Definiton • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4480DY 2002/95/EC Si4480DY-T1-E3 Si4480DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4490DY 2002/95/EC Si4490DY-T1-E3 Si4490DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 8.9 0.022 at VGS = - 2.5 V - 8.1 0.028 at VGS = - 1.8 V - 3.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si4931DY 2002/95/EC Si4931DY-T1-E3 Si4931DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. R E V ISIO N S DW A2 27APR09 REVISED E C R —0 9 —0 1 0 4 7 4 SC WK LOGO & DATE CODE 16.20 14.0 MAX 1.00 □ 0.35 8 PLC 01.60 PLC 1.60 2 PLC


    OCR Scan     		PDF 27APR09 27/im 508/im 31MAR2000