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    SI4963BDY Search Results

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    SI4963BDY Price and Stock

    Vishay Siliconix SI4963BDY-T1-E3

    MOSFET 2P-CH 20V 4.9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4963BDY-T1-E3 Cut Tape 1,947 1
    • 1 $2.05
    • 10 $1.311
    • 100 $2.05
    • 1000 $0.64658
    • 10000 $0.64658
    Buy Now
    SI4963BDY-T1-E3 Digi-Reel 1,947 1
    • 1 $2.05
    • 10 $1.311
    • 100 $2.05
    • 1000 $0.64658
    • 10000 $0.64658
    Buy Now
    SI4963BDY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.58335
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    RS SI4963BDY-T1-E3 Bulk 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $1.46
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    New Advantage Corporation SI4963BDY-T1-E3 2,500 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.8377
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    Vishay Siliconix SI4963BDY-T1-GE3

    MOSFET 2P-CH 20V 4.9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4963BDY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6875
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    Vishay Intertechnologies SI4963BDY-T1-GE3

    Transistor MOSFET Array Dual P-CH 20V 4.9A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4963BDY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4963BDY-T1-GE3 Reel 2,500
    • 1 -
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    • 10000 $0.6534
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    Bristol Electronics SI4963BDY-T1-GE3 95
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    TTI SI4963BDY-T1-GE3 Reel 5,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.91
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    Vishay Intertechnologies SI4963BDY-T1-E3

    Dual Mosfet, Dual P Channel, -4.9 A, -20 V, 0.025 Ohm, -2.5 V, -1.4 V Rohs Compliant: Yes |Vishay SI4963BDY-T1-E3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4963BDY-T1-E3 Bulk 2,526 1
    • 1 $1.81
    • 10 $1.67
    • 100 $1.44
    • 1000 $1.38
    • 10000 $1.38
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    Bristol Electronics SI4963BDY-T1-E3 2,480
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    TME SI4963BDY-T1-E3 1
    • 1 $1.25
    • 10 $1.15
    • 100 $0.86
    • 1000 $0.72
    • 10000 $0.72
    Get Quote
    Chip One Stop SI4963BDY-T1-E3 Cut Tape 2,435
    • 1 $1.07
    • 10 $0.913
    • 100 $0.65
    • 1000 $0.476
    • 10000 $0.452
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    Vishay Intertechnologies SI4963BDYT1E3

    2.5-V DUAL P-CHANNEL (G-S) MOSFET Small Signal Field-Effect Transistor, 4.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4963BDYT1E3 1,635
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    SI4963BDY Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4963BDY Vishay Siliconix MOSFETs Original PDF
    Si4963BDY Vishay Telefunken Dual P-channel 2.5-v (g-s) Mosfet Original PDF
    Si4963BDY-T1 Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4963BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.9A 8-SOIC Original PDF
    SI4963BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.9A 8SOIC Original PDF

    SI4963BDY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


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    Si4963BDY 2002/95/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4963BDY 13-Jan-04 PDF

    Si4963BDY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application


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    Si4963BDY 20-May-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


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    Si4963BDY 2002/95/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 20electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    40235

    Abstract: Si4963BDY Si4963BDY-T1
    Text: Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free)


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    Si4963BDY Si4963BDY--E3 Si4963BDY-T1--E3 S-40235--Rev. 16-Feb-04 40235 Si4963BDY-T1 PDF

    Si4963BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4963BDY 18-Jul-08 PDF

    40235

    Abstract: Si4963BDY Si4963BDY-T1
    Text: Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free)


    Original
    Si4963BDY Si4963BDY--E3 Si4963BDY-T1--E3 08-Apr-05 40235 Si4963BDY-T1 PDF

    Si4963BDY

    Abstract: Si4963BDY-T1-E3 Si4963BDY-T1-GE3 SI4963
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original
    Si4963BDY 2002/95/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 11-Mar-11 SI4963 PDF

    Si4963BDY

    Abstract: Si4963BDY-T1-E3 Si4963BDY-T1-GE3
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original
    Si4963BDY 2002/95/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/96/EC


    Original
    Si4963BDY 2002/96/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 20llectual 18-Jul-08 PDF

    Si4963BDY

    Abstract: mosfet Vds 30 Vgs 25
    Text: SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4963BDY S-60245Rev. 20-Feb-06 mosfet Vds 30 Vgs 25 PDF

    Si4963BDY

    Abstract: Si4963BDY-T1-E3 Si4963DY-T1 SI4963DY Si4963DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4963BDY vs. Si4963DY Description: P-Channel, 2.5 V G-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4963BDY-T1-E3 Replaces Si4963DY-T1-E3 Si4963BDY-T1-E3 Replaces Si4963DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


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    Si4963BDY Si4963DY Si4963BDY-T1-E3 Si4963DY-T1-E3 Si4963DY-T1 08-Nov-06 PDF

    78455

    Abstract: C 5763 transistor AN609 Si4963BDY
    Text: Si4963BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si4963BDY AN609 23-Jan-06 78455 C 5763 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free)


    Original
    Si4963BDY Si4963BDY--E3 Si4963BDY-T1--E3 18-Jul-08 PDF

    1N4007 MINI MELF

    Abstract: No abstract text available
    Text: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4


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    250ns DO-220AA V-540V; V-440V; DO-204AL DO-41) DO-204AC 1N4007 MINI MELF PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF