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    26N90 Price and Stock

    IXYS Corporation IXFN26N90

    MOSFET N-CH 900V 26A SOT-227B
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    DigiKey IXFN26N90 Tube 300
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    IXYS Corporation IXFK26N90

    MOSFET N-CH 900V 26A TO-264
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    DigiKey IXFK26N90 Tube 25
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    IXYS Corporation IXFX26N90

    MOSFET N-CH 900V 26A PLUS 247
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    DigiKey IXFX26N90 Tube 30
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    26N90 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    26N90 IXYS HiPerFET Power MOSFETs Original PDF

    26N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IDSS RDS on trr IXFK/IXFX 26N90 900 V 26 A 0.30 Ω 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Ω 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 26N90 25N90 247TM 25N90 125oC

    26N90

    Abstract: IXFN26N90 125OC 25N90 IXFN25N90 max1828
    Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions


    Original     		PDF 26N90 25N90 OT-227 E153432 26N90 IXFN26N90 125OC 25N90 IXFN25N90 max1828

    125OC

    Abstract: 25N90 26N90
    Text: HiPerFETTM Power MOSFETs VDSS IDSS RDS on trr IXFK/IXFX 26N90 900 V 26 A 0.30 Ω 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Ω 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 26N90 25N90 247TM 25N90 125oC 125OC

    26N90

    Abstract: No abstract text available
    Text: VDSS Power MOSFETs Single Die MOSFET ID cont RDS(on) 26 A 25 A 0.30 Ω 0.33 Ω IXTN 26N90 900 V IXTN 25N90 900 V N-Channel Enhancement Mode D G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 26N90 25N90 26N90 OT-227 E153432

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions


    Original     		PDF 26N90 25N90 25N90 Figure10. IXFN26N90

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 26N90 25N90 25N90 247TM O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID cont 900 V 900 V 26 A 25 A RDS(on) trr 0.30 Ω 250 ns 0.33 Ω 250 ns D G Preliminary data sheet S S Symbol Test Conditions


    Original     		PDF 26N90 25N90 25N90

    fast IXFX

    Abstract: 125OC 25N90 26N90 IDSS
    Text: HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 26N90 25N90 247TM O-264 fast IXFX 125OC 25N90 26N90 IDSS

    IXFN26N90

    Abstract: 25N90 26N90 IXFN25N90 IXYS MOSFET 900V 13A
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN25N90 26N90 VDSS ID25 RDS on 900V 25A 900V 26A 330mΩ Ω 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated,High dv/dt, Low trr Fast Intrinsic Diode miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFN25N90 IXFN26N90 OT-227 E153432 25N90 26N90 IXFN26N90 25N90 26N90 IXFN25N90 IXYS MOSFET 900V 13A

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    IXFX25N90

    Abstract: IXFX26N90
    Text: HiPerFETTM Power MOSFETs IXFK25N90 IXFX25N90 26N90 26N90 VDSS ID25 RDS on 900V 25A 330mΩ Ω 900V 26A 300mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 O-264 25N90 26N90 PLUS247 IXFX25N90 IXFX26N90

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    LQ25

    Abstract: 0B4 DC-DC
    Text: inixYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET v D DSS 900 V 900 V IXFN 26N90 IXFN 25N90 bss 26 A 25 A DS on tr r 0.30 Q 250 ns 0.33 Q 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions


    OCR Scan     		PDF IXFN26N90 IXFN25N90 Cto150 26N90 25N90 LQ25 0B4 DC-DC

    Untitled

    Abstract: No abstract text available
    Text: □IXYS v HiPerFET Power MOSFETs IXFN 26N90 Single Die MOSFET DSS IXFN 25N90 D DS on (cont) K 900 V 26 A 0.30 Q. 250 ns 900 V 25 A 0.33 Q. 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Low trr Preliminary data sheet s Maximum Ratings Symbol


    OCR Scan     		PDF 26N90 25N90 OT-227 E153432

    Untitled

    Abstract: No abstract text available
    Text: aixYS Advanced Technical Information HiPerFET Power MOSFETs p bss DS on K IXFK/IXFX 26N90 900 V 26 A 0.30 Q. 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 Q. 250 ns V DSS • Single MOSFET Die Maximum Ratings Symbol Test Conditions V Tj = 25° C to 150° C Tj = 25° C to 150° C; RGS= 1 M il


    OCR Scan     		PDF 26N90 25N90 25N90 O-264AA 215BSC

    Untitled

    Abstract: No abstract text available
    Text: riTvv<v Advanced Technical Information IXFN 26N90 HiPerFET Power MOSFETs Single Die MOSFET Test Conditions v DSS Td = 25°C to 150°C 900 V v DGR Td = 25°C to 150°C; RGS = 1 MQ 900 V V GS Continuous +20 V V GSM Transient +30 V ^D25 Tc = 25°C 26 A ^DM


    OCR Scan     		PDF IXFN26N90 OT-227 E153432

    "SOT-227 B" dimensions

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFET Power MOSFETs IXFN 26N90 v DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t ^D25 p DS on *rr Symbol Test Conditions Maximum Ratings Voss vDGR Tj = 25°C to 150°C Tj = 25CC to 150°C; RGS= 1 M ti


    OCR Scan     		PDF IXFN26N90 OT-227 E153432 "SOT-227 B" dimensions

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs V DSS Single MOSFET Die Maximum Ratings Symbol Test Conditions v Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 900 900 V V Continuous Transient ±20 ±30 V V 26 25 104 100 26 25 A


    OCR Scan     		PDF 26N90 25N90 26N90 25N90

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50