AVAGO DATE CODE MARKING
Abstract: transistor EFT 377 B MPS430F1222IPW ADNS-7530 transistor EFT 213
Text: ADNS-7530 Integrated molded lead-frame DIP Sensor Data Sheet Theory of Operation Features The ADNS-7530 integrated molded lead-frame DIP sensor comprises of sensor and VCSEL in a single package. • Wide operating voltage: 2.7V-3.6V The advanced class of VCSEL was engineered by Avago
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ADNS-7530
ADNS-7530
AV02-0684EN
AVAGO DATE CODE MARKING
transistor EFT 377 B
MPS430F1222IPW
transistor EFT 213
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EN25Q128
Abstract: No abstract text available
Text: EN25Q128 EN25Q128 128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • Single power supply operation
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EN25Q128
M-bit/16
K-byte/65
104MHz
80MHz
EN25Q128
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EN25Q128
Abstract: cFeon* SPI Flash EN25 C20F Dual Output fast
Text: EN25Q128 EN25Q128 128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • Single power supply operation
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EN25Q128
M-bit/16
K-byte/65
104MHz
80MHz
24-ball
EN25Q128
cFeon* SPI Flash
EN25
C20F
Dual Output fast
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PDF
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2253A
Abstract: 25Q 328
Text: QSFCT153T, 253T, 2153T, 2253T High Speed CMOS \ M , Dual 4 Input Mulitplexers Q QS54/74FCT253T QS54/74FCT2153T QS54/74FCT2253T r FEATURES/BENEFITS • Pin and function compatible to the 74F153/253 74FCT153/253 and 74FCT153T/253T • CMOS power levels: <7.5 mW static
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QSFCT153T,
2153T,
2253T
QS54/74FCT253T
QS54/74FCT2153T
QS54/74FCT2253T
74F153/253
74FCT153/253
74FCT153T/253T
MIL-STD-883
2253A
25Q 328
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25Q 328
Abstract: No abstract text available
Text: r NOTES: 0 MAT ' L : ir.oot F HE N O . BB- CD -20 5 - 0 2 .031 COPPER S TOC K TK N . - y g PLATING : ELECTRO-TIN ( .0 0 0 3 MIN. INSULATION MOLDED PVC (BLUE) STUD S IZ E S :(-.005) 02 - .094 04 = .119 06 = .146 . 08 = .173 10 = .198 14 = .265 vU L LISTING E 32244
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2707BB-2707BB-2708BB-2709'
25Q 328
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11CX11B-D01
Abstract: 12CX 25Q 328
Text: CATALO G MICRO SWITCH SWITCH - a Honeywell Division FED. MFG. CODE LISTING CONVERSION CHART 11CX 12CX ENCLOSED 0,05 7,29 7,92 8,33 8,5 9,4 9,5 12,7 17,8 18,3 20,3 2 5,4 29,5*1,5 32,0 4 0,0 50,8 60,3 5 80,0 96.0 98.0 101,6 104.0 0 .5 0 Nm 1,13 Kq SERIES CHART 7
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PR22514
CO-95297
11CX12BC-D01
11CX11B-D01
11CX11B-D01
12CX
25Q 328
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products QS386 i High-Speed CMOS 10-Bit Bus Switch With Flow-Thru Pinout QS32861 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • bidirectional switches connect inputs to outputs • Zero propagation delay 3861 , zero ground
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QS386
10-Bit
24-pin
QS32861
QS3861
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smd transistor marking code D13
Abstract: No abstract text available
Text: BSP 373 I nf ineon technologie» SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated •^GS .h =2-1 •4 0 V Type Vbs b B DS(on) Package Marking BSP 373 100 V 1.7 A 0.3 n SOT-223 BSP 373 Type BSP 373 Ordering Code Q67000-S301
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OT-223
Q67000-S301
E6327
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
smd transistor marking code D13
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Untitled
Abstract: No abstract text available
Text: S e m i c I u c t o r I nc QuickSwitch Products . High-Speed CMOS « o fS « ADVANCE 1 ° - B it BUS S w itG h W it h INFORMATION QS32862 Active High and Low Enables FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc •
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QS32862
24-pin
QS3862
DSL-00245-00
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178 12T 741
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Data Sheet 200 Mb/s 64 x 64 Crosspoint Switch VSC864A-2 Features • 200 Mb/s Operation • Power Dissipation: 9.4 Watts Typ. • Duty-cycle Distortion: < 10% • Single Power Supply: -2 V ± 5% • Clocked or Flow-through Operation
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344-pin
VSC864A-2
VSC864A-2
G52132-0
1SD2331
0DQ372A
178 12T 741
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Intermediate frequency transformer 455
Abstract: Mullard
Text: DISC SEA L TR IO D E TD2-400A Application: R.F. oscillator, amplifier or frequency multiplier. Power output: 600VV at f=470M c/s. Frequency: 470Mc/s at fu ll ratings, 900Mc/s at reduced ratings. Construction: Disc seal, ceramic envelope, forced-air cooled.
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TD2-400A
470Mc/s.
470Mc/s
900Mc/s
600Mc/s)
TD2-400A
600Mc/s
Intermediate frequency transformer 455
Mullard
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PDF
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2253A
Abstract: 253T
Text: QSFCT153T, 253T, 2153T, 2253T H ig h S p e e d C M O S D ual 4 In p u t Q qs54/74fctis 3t q s 54/74 f c t 253 t M u litp le x e rs QS54/74FCT2153T QS54/74FCT2253T FEATURES/BENEFITS • • • • Pin and function compatible to the 74F153/253 74FCT153/253 and 74FCT153T/253T
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QSFCT153T,
2153T,
2253T
QS54A74FCT153T
QS54/74FCT253T
QS54V74FCT2153T
QS54/74FCT2253T
74F153/253
74FCT153/253
74FCT153T/253T
2253A
253T
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Untitled
Abstract: No abstract text available
Text: Tg] QuickSwitch Products High-Speed CMOS ßUS Switch With Active High and Low Enables fà Semiconductor, I nc . advance INFORMATION FEATURES/BENEFITS DESCRIPTION • The QS3862 and QS32862 each provide a set of ten high speed CMOS, TTL Compatible bus switches.
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QS3862
QS32862
PSS-28A
MO-137AE
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Untitled
Abstract: No abstract text available
Text: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, rDS ON = 0.480SJ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for com mercial and m ilitary space
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FSL23A4D,
FSL23A4R
480SJ
36MeV/mg/cm2
FSL23A401
FSL23A4D3ours
MIL-STD-750,
MIL-S-19500,
500ms;
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Untitled
Abstract: No abstract text available
Text: FSL23A4D, FSL23A4R Semiconductor 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, ros ON = 0-480S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL23A4D,
FSL23A4R
O-205AF
254mm)
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE - AWT0908 AWT0908 Power Amplifier for GSM Phones Introduction This application note describes the use of ANADIGICS AW T0908 Single Supply, GSM Band, Power Amplifier . The AW T0908 is specifically designed for GSM Cellular handset applications. The 28-pin SOIC package allows
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AWT0908
T0908
T0908
28-pin
theAWT0908
AWT0908
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PDF
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Untitled
Abstract: No abstract text available
Text: VITESSE PRELIMINARY FEATURES • Superior Perform ance: 200 Mb/s • Duty-cycle D istortion @ 200M b/s: < 20% • Operating R ange: -40° to +85° C • Pow er D issipation: 10 W atts Typical • Clocked o r Flow -through Operation • HCL F100K C om patible Inputs and Outputs
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F100K
344-pin
VSC864A-2
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PDF
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Untitled
Abstract: No abstract text available
Text: VITESSE VSC864A-2 Data Sheet 200 Mb/s 64 x 64 Crosspoint Switch Features • 200 Mb/s Operation • Power Dissipation: 9.4 Watts Typ. • Duty-cycle Distortion: < 10% • Single Power Supply: -2 V ± 5% • Clocked or Flow-through Operation • Commercial (0° to +70° C) or Industrial
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VSC864A-2
344-pin
VSC864A-2
G52132-0
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Untitled
Abstract: No abstract text available
Text: advanced . interconnections Single - Turret Standoffs 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 - TWX 9102403454 EMCTroduct "STS" Series T G T F Plating: i -14: -T THRU HOLE -4: h- E 1 -17: h D -52: 400p" Tin term inal,
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400ji"
QQ-B-626
MIL-M-14F
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PDF
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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PDF
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25Q 328
Abstract: No abstract text available
Text: Preliminary Data Sheet September 1996 m i c r o e l e c t r o n i c s gr oup Lucent Technologies Bell Labs Innovations ATTL7551 Low-Power SLIC Features Description • Low active power typical 115 mW during on-hook transmission This electronic subscriber loop interface circuit
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ATTL7551
211bD
25Q 328
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Avantek amplifier
Abstract: transistor tt 2206 TT 2206 Avantek, Inc. GPD 35C05 LMM 2057 GPD-201 Avantek rf amplifier GPD-1001 GPD-405 GPD-331
Text: AVANTEK INC EOE O a v a n tek D • i m i l t t 0QQ7343 Selection G uide 4 GPD Series PRODUCT DESCRIPTION The GPD and G PM amplifiers, available in TO-12 4-pin and TO-39 (3-pin) packages, are designed for applications which require the highest performance-to-cost ratio or where size is
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CA85035
TWX910-338-2206
Avantek amplifier
transistor tt 2206
TT 2206
Avantek, Inc. GPD
35C05
LMM 2057
GPD-201
Avantek rf amplifier GPD-1001
GPD-405
GPD-331
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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O220AB
O-126
j2y transistor
T15J10
MP4704
MG100M2CK1
2sb834
MP3103
MG50J6ES91
MP3002
mp4505
2sc497
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PDF
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MIL-T-55155
Abstract: ali 3329 ali m 3329 BA 5979 5740-14 SE181 SE191D01 57b9 MZ-157 EMC 8200 E
Text: Single - Turret Standoffs ADVANCED INTERCONNECTIONS' 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 •TWX 9102403454 EMC*Product "STS" Series Plating: 400p" Tin terminal, 200|i" Cadm ium Chrom ate base/eyelet
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OCR Scan
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QQ-B-626
MIL-M-14F
MIL-T-55155
ali 3329
ali m 3329
BA 5979
5740-14
SE181
SE191D01
57b9
MZ-157
EMC 8200 E
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