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    25DMB Search Results

    25DMB Result Highlights (2)

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    2925DM/B Rochester Electronics LLC AM2925A - Clock Generator Visit Rochester Electronics LLC Buy
    93425DM/B Rochester Electronics LLC Replacement for Fairchild part number 93425DMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
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    Rochester Electronics LLC 2925DM/B

    2925DM/B
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    DigiKey 2925DM/B Bulk 3
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    Rubycon Corporation 2.5DMB50M18X40

    CAP 50F 20% 2.5V THROUGH HOLE
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    Rubycon Corporation 2.5DMB10M10X35

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    Rubycon Corporation 2.5DMB3R3M8X20

    CAP 3.3F 20% 2.5V THROUGH HOLE
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    Rubycon Corporation 2.5DMB2R2M8X16

    CAP 2.2F 20% 2.5V THROUGH HOLE
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    25DMB Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2.5DMB100M20X55 Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 100F 2.5V RADIAL Original PDF
    2.5DMB10M10X35 Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 10F 2.5V RADIAL Original PDF
    2.5DMB22M16X25 Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 22F 2.5V RADIAL Original PDF
    2.5DMB2R2M8X16 Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 2.2F 2.5V RADIAL Original PDF
    2.5DMB3R3M8X20 Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 3.3F 2.5V RADIAL Original PDF
    2.5DMB4R7M10X20 Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 4.7F 2.5V RADIAL Original PDF
    2.5DMB50M18X40 Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 50F 2.5V RADIAL Original PDF

    25DMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C187

    Abstract: CY7C187A
    Text: CY7C187A 64K x 1 Static RAM Features provided by an active LOW chip enable CE and three-state drivers. The CY7C187A has an automatic power-down feature, reducing the power consumption by 55% when deselected. • High speed — 20 ns • CMOS for optimum speed/power


    Original     		PDF CY7C187A CY7C187A CY7C187

    C2665

    Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
    Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)


    Original     		PDF CY7C266 CY7C266 600-mil-wide C2665 C2668 7c26 C2662 C266 27C64 R1250 C2666

    C1507

    Abstract: C1504 C1502 c1509 C150 CY7C150 R1329
    Text: CY7C150 1Kx4 Static RAM Features Separate I/O paths eliminates the need to multiplex data in and data out, providing for simpler board layout and faster system performance. Outputs are three-stated during write, reset, deselect, or when output enable OE is held HIGH, allowing for


    Original     		PDF CY7C150 C1507 C1504 C1502 c1509 C150 CY7C150 R1329

    C401 diode

    Abstract: 10DC IR transistor 10dc ir C4016 C4019 C401 CY7C401 CY7C402 CY7C403 C4013
    Text: CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO Features words. Both the CY7C403 and CY7C404 have an output enable OE function. • 64 x 4 (CY7C401 and CY7C403) 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO)


    Original     		PDF CY7C401/CY7C403 CY7C402/CY7C404 CY7C403 CY7C404 CY7C401 CY7C403) CY7C402 CY7C404) 25-MHz 50-ns C401 diode 10DC IR transistor 10dc ir C4016 C4019 C401 C4013

    CY7C128A

    Abstract: transistor C128 C128A 7C128A-45 7C128A-25
    Text: 1CY 7C12 8A CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 440 mW commercial — 550 mW (military) • Low standby power


    Original     		PDF CY7C128A CY7C128A transistor C128 C128A 7C128A-45 7C128A-25

    C167A-3

    Abstract: C167A-2 CY7C167A CY7C167A-35DMB cy7c167a-35pc
    Text: CY7C167A 16K x 1 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


    Original     		PDF CY7C167A CY7C167A 20-Lead C167A-3 C167A-2 CY7C167A-35DMB cy7c167a-35pc

    CY7C197

    Abstract: No abstract text available
    Text: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable


    Original     		PDF CY7C197 256Kx1 CY7C197

    P4C148

    Abstract: P4C149
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns (P4C148 Military)


    Original     		PDF P4C148, P4C149 P4C148 P4C149 096-bit

    P4C150

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs


    Original     		PDF P4C150 24-Pin 28-Pin P4C150 096-bit requires300 SRAM105

    7cl6

    Abstract: D-2501 CY7C161A CY7C162 CY7C162A
    Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power


    OCR Scan     		PDF CY7C161A CY7C162A 7C161A) CY7C162 au62A-35DMB CY7C162Aâ 35KMB CY7C162A-35LMB CY7C162A-45DMB 7cl6 D-2501 CY7C162A

    CY7C263-35PC

    Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
    Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)


    OCR Scan     		PDF CY7C261 C263/CY7C264 7C261) 300-mil 600-mil CY7C261, CY7C263, CY7C264 8192-word byGY7C264 CY7C263-35PC 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 f1b0

    7C192-12

    Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power


    OCR Scan     		PDF CY7C191 CY7C192 7C19X) TheCY7C191 CY7C192 CY7C192-45VC CY7C192-45DMB CY7C192-45KMB CY7C192â 45LMB 7C192-12 7C192-15 7C192-20 A10C CY7C192-25PC

    c46cm

    Abstract: CY7C460 CY7C462 CY7C464 IDT7205 IDT7206
    Text: CY7C460 CY7C462 CY7C464 m .W C Y P R E S S C ascadable 8 K x 9 F I F O C ascadable 16K x 9 FIFO C ascadable 3 2 K x 9 FIFO Features • • • • • • • • • • • • • • • data outputs go to the high-impedance Functional Description state when R is H IG H .


    OCR Scan     		PDF CY7C460 CY7C462 CY7C464 CY7C460) CY7C462) CY7C464) 600-mil IDT7205, IDT7206 CY7C460, c46cm CY7C464 IDT7205 IDT7206

    CY7C101A

    Abstract: CY7C102A 7C101A-12 l3lx
    Text: PRELIMINARY 9 / C Y PR E SS CY7C101A CY7C102A 256K x 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C101A and CY7C102A are high­ perform ance CMOS static RAM s orga­ nized as 262,144 x 4 bits with separate I/O. Easy m emory expansion is p rovided by ac­


    OCR Scan     		PDF CY7C101A CY7C102A 7C101A) CY7C102A CY7C101A tdwel161 7C101A 8-00231-A 7C101A-12 l3lx

    CY7C167A

    Abstract: CY7C167A-35DMB
    Text: CY7C167A '0 CYPRESS 16K x 1 Static RAM Features Functional D escription • Automatic power-down when dese­ lected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7C167A CY7C167A CY7C167Aâ 45DMB 20-Lead 300-Mil) 38-00093-C CY7C167A-35DMB

    CY7C225A

    Abstract: No abstract text available
    Text: CY7C225A '= C Y P R E S S Features • CMOS for optimum speed/power • High speed — 18 ns address set-up — 12 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous out­ put enables • On-chip edge-triggered registers


    OCR Scan     		PDF CY7C225A 300-mil, 24-pin 28-pin CY7C225A CY7C225A-40PC 24-Lead 300-Mil) CY7C225Aâ

    7C192-12

    Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: CY7C191 CY7C192 ir CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed T he CY7C191 and CY7C192 are high­ perform ance CM OS static RAM s orga­ nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac­


    OCR Scan     		PDF CY7C191 CY7C192 CY7C191) CY7C192 38-00076-J tAW15! tADvI15! 7C192-12 7C192-15 A10C CY7C192-25PC

    L496D

    Abstract: 9l reset CY7C331 ST L11922 0423-J
    Text: CY7C331 -W C Y P R E S S Asynchronous Registered EPLD Features • TWelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coining from the I/O pin — Independent product term set,


    OCR Scan     		PDF CY7C331 28-pin CY7C331 -40TMB 28-Lead CY7C331â 40WMB 28-Lead 300-Mil) L496D 9l reset ST L11922 0423-J

    AB26S

    Abstract: 7C109A CY7C109 CY7C109A
    Text: CY7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		PDF CY7C109A 128Kx CY7C109A AB26S 7C109A CY7C109

    CY7C428-65PC

    Abstract: CY7C419 CY7C421 CY7C425 CY7C429 CY7C433 IDT7200 IDT7201 IDT7202 IDT7203
    Text: fax id: 5404 CY7C419/21/25/29/33 -= C Y P R E S S 256/512 /1K /2K/4K x 9 Asynchronous FIFO Features • • • • • • • • • • • • • • • Asynchronous first-in first-out FIFO buffer memories 256 x 9 (CY7C419) 512 x 9 (CY7C421) 1 K x 9 (CY7C425)


    OCR Scan     		PDF CY7C419/21/25/29/33 CY7C419) CY7C421) CY7C425) CY7C429) CY7C433) 300-mil 600-mil IDT7200, IDT7201, CY7C428-65PC CY7C419 CY7C421 CY7C425 CY7C429 CY7C433 IDT7200 IDT7201 IDT7202 IDT7203

    22V10D

    Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
    Text: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military


    OCR Scan     		PDF PALC22V10D 100-MHz 83-MHz PALC22V10D 15DMB PALC22V10D- PALC22V10Dâ 15KMB PALC22V10D-15LMB 22V10D PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D-10JC

    CY7C197

    Abstract: CV7C197
    Text: MbE D n " T CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 20ns Low active power — 880 mW Low standlgr power — 220 mW TlX-compatible imputs and outputs Capable ofwithstanding greater than


    OCR Scan     		PDF CY7C197 2001Velectrostatic CY7C197 CY7C197-45LC CY7C197-45PC CY7C197-45VC CY7C197-45DMB CY7C197-45KMB CY7C197-45LMB CV7C197

    CY7C1009

    Abstract: 7C1009 A14C
    Text: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance


    OCR Scan     		PDF CY7C1009 550-mil CY7C1009 7C1009 A14C

    automaticpower change over switch circuit diagram

    Abstract: CY7C185 CY7C185A
    Text: CY7C185A '* C YPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns • CMOS for optimum speed/power T he CY7C185A is a high-perform ance CMOS static RA M organized as 8192 words by 8 bits. Easy mem ory expansion is provided by an active LO W chip enable


    OCR Scan     		PDF CY7C185A CY7C185A 300-miMilitary CY7C185Aâ 25LMB 28-Pin 35DMB 28-Lead automaticpower change over switch circuit diagram CY7C185