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    7C1009 Search Results

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    7C1009 Price and Stock

    Flip Electronics CY7C1009D-10VXIT

    IC SRAM 1MBIT PARALLEL 32SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1009D-10VXIT Reel 12,000
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    Rochester Electronics LLC CY7C1009B-15VC

    IC SRAM 1MBIT PARALLEL 32SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1009B-15VC Tube 2,619 111
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    • 1000 $2.71
    • 10000 $2.71
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    Flip Electronics CY7C1009D-10VXI

    IC SRAM 1MBIT PARALLEL 32SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1009D-10VXI Tube 2,519 250
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    • 1000 $2.04
    • 10000 $2.04
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    Rochester Electronics LLC CY7C1009B-15VCT

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey CY7C1009B-15VCT Bulk 400 214
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    • 1000 $1.4
    • 10000 $1.4
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    Rochester Electronics LLC CY7C1009BN-12VC

    IC SRAM 1MBIT PARALLEL 32SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1009BN-12VC Bulk 362 210
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    Find more 7C1009 price and stock on Findchips.com

    7C1009 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cy7c109l-15vi

    Abstract: CY7C109L15VI CY7C109L CY7C1009 CY7C109 CY7C1009-15VI cy7c109-15zc CY7C109-15VI
    Text: CY7C109 7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low-power version) • 2.0V Data Retention (Low-power version) • Automatic power-down when deselected


    Original     		PDF CY7C109 CY7C1009 CY7C109 CY7C1009 cy7c109l-15vi CY7C109L15VI CY7C109L CY7C1009-15VI cy7c109-15zc CY7C109-15VI

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05038 Spec Title: CY7C109B, 7C1009B 128K X 8 STATIC RAM Sunset Owner: Prashanth Jnanendra PRAS Replaced by: NONE CY7C109B 7C1009B 128K x 8 Static RAM Functional Description[1] Features • High speed The CY7C109B/7C1009B is a high-performance CMOS


    Original     		PDF CY7C109B, CY7C1009B CY7C109B CY7C1009B 400-mil-wide 32-pin 300-mil-wide CY7C109B/CY7C1009B

    ATPA

    Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C


    Original     		PDF CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c

    Untitled

    Abstract: No abstract text available
    Text: CY7C109D 7C1009D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features • Pin- and function-compatible with CY7C109B/7C1009B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA


    Original     		PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B CY7C109D 32-pin 400-Mil CY7C1009D 300-Mil

    CY7C1009

    Abstract: No abstract text available
    Text: 1CY 7C10 09 PRELIMINARY 7C1009 128K x 8 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 µW • Available in 450 x 550-mil LCC


    Original     		PDF CY7C1009 550-mil CY7C1009

    CY7C1009

    Abstract: CY7C109
    Text: fax id: 1047 CY7C109 7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected


    Original     		PDF CY7C109 CY7C1009 CY7C1009 CY7C109

    81c78

    Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
    Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M


    Original     		PDF 2147-35C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35M 2148-45C 81c78 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference

    Untitled

    Abstract: No abstract text available
    Text: CY7C109B 7C1009B 128K x 8 Static RAM Features put Enable OE , and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O 0 through I/O 7) is then


    Original     		PDF CY7C109B CY7C1009B

    CY7C1009V33

    Abstract: CY7C109V33
    Text: 3 7C1009V33 CY7C109V33 PRELIMINARY 128K x 8 Static RAM Features memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), an active LOW output enable (OE), and three-state drivers. Writing to the device is accomplished by taking chip enable one (CE1) and write


    Original     		PDF CY7C1009V33 CY7C109V33 CY7C1009V33 CY7C109V33

    MSM 6290

    Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+


    Original     		PDF 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 27S07AC 7C190-25C MSM 6290 msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150

    EPM5128LC

    Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C


    Original     		PDF CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309

    Untitled

    Abstract: No abstract text available
    Text: CY7C109D 7C1009D 1-Mbit 128K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C109B/7C1009B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power The CY7C109D/7C1009D is a high-performance CMOS


    Original     		PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B 32-pin 400-Mil CY7C1009D 300-Mil

    cy7c109b-15vc

    Abstract: CY7C109B-15VI 109b1 cypress semiconductor cy7c109b-20zi
    Text: 7C1009B CY7C109B 7C1009B 128K x 8 Static RAM Features • High speed — tAA = 12 ns • Low active power — 495 mW max. 12 ns • Low CMOS standby power — 55 mW (max.) 4 mW • 2.0V Data Retention • Automatic power-down when deselected • TTL-compatible inputs and outputs


    Original     		PDF 1CY7C1009B CY7C109B CY7C1009B cy7c109b-15vc CY7C109B-15VI 109b1 cypress semiconductor cy7c109b-20zi

    Untitled

    Abstract: No abstract text available
    Text: THE FOLLOWING SECOND QUARTER REPORT 1996, the sections entitled “To Our Shareholders” and “Market Perspective” may contain forwardlooking statements about the prospects for Cypress as well as the semiconductor industry more generally including without limitation statements about,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 7C1009: 1 1 -2 5 -9 1 Revision: Monday, January 11,1993 — ^ MAR S 3 1993 PRELIMINARY CYPRESS SEMICONDUCTOR 7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW


    OCR Scan     		PDF 7C1009: CY7C1009 128Kx 550-mil CY7C1009

    CY7C1009

    Abstract: 7C1009 A14C
    Text: PRELIMINARY r y f|pPA RJL- lrP Anni I 7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The 7C1009 is a high-performance


    OCR Scan     		PDF CY7C1009 550-mil CY7C1009 7C1009 A14C

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1089 =mmmm rrm - 7C1009V33 C Y7C109 V33 PRELIMINARY 128K x 8 Static RAM memory expansion is provided by an active LOW chip enable CE-| , an active HIGH chip enable (CE2), an active LOW out­ put enable (OE), and three-state drivers. Writing to the device


    OCR Scan     		PDF CY7C1009V33 Y7C109

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1047 CY7C109 7C1009 ^C YPR ESS 128K x 8 Static RAM active HIGH chip enable CE 2 , an active LOW output enable (OE), and three-state drivers. Writing to the device is accom plished by taking chip enable one (CE-|) and write enable (WE) inputs LOW and chip enable two (CE 2 ) input HIGH. Data on


    OCR Scan     		PDF CY7C109 CY7C1009

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 7C1009 128K x 8 Static R AM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 ^iW • AvaUable in 450 x 550-mil LCC


    OCR Scan     		PDF CY7C1009 550-mil CY7C1009

    G 1009l

    Abstract: CY7C1009 CY7C109
    Text: fax id: 1047 CY7C109 7C1009 CYPRESS 128K x 8 Static RAM Features active HIG H chip enable C E 2 , an active LO W ou tput enable (OE), and three -state drivers. W riting to the device is a cco m ­ plished by takin g chip enable one (CE-|) and w rite enable (WE)


    OCR Scan     		PDF CY7C109 CY7C1009 CY7C1009 G 1009l

    V32 Package

    Abstract: CY7C1009V33 CY7C109V33
    Text: 7C1009V33 CY7C109V33 iF c y p r e s s 128K x 8 Static RAM Features memory expansion is provided by an active LOW Chip Enable CE-| , an active HIGH Chip Enable (CE2), an active LOW Out­ put Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable one (CE-|) and Write


    OCR Scan     		PDF CY7C1009V33 CY7C109V33 128Kx CY7C109V33/CY7C1009V33 V32 Package CY7C1009V33 CY7C109V33

    Untitled

    Abstract: No abstract text available
    Text: C Y 7 C 1 0 0 9 C Y 7 C 1 0 9 CYPRESS 128K 8 Static RAM active HIGH chip enable CE2 , an active LOW output enable (OE), and three-state drivers. Writing to the device is accom­ plished by taking chip enable one (CE-|) and write enable (WE) inputs LOW and chip enable two (CE2) input HIGH. Data on


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS SEMICONDUCTOR Functional Description • High speed T he 7C1009 is a high-perform ance CM O S static R A M organized as 131,072 w ords by 8 bits. Easy m em ory expansion is provided by an active L O W chip enable C E i , an active H IG H chip e n a ble ( C E 2),


    OCR Scan     		PDF CY7C1009 550-mil

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY ÌJS i CYPRESS 128Kx 8 Static RAM Features Functional Description • H igh speed The 7C1009 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE] , an active HIGH chip enable (CE2),


    OCR Scan     		PDF 128Kx CY7C1009 550-m