BLF522
Abstract: No abstract text available
Text: BLF522 UHF POWER MOS TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI BLF522 is Designed for communications transmitter applications in the UHF frequency range. A .040x45° 4X .025 R B C 2 4 1 3 6 2XØ.130 .115 .430 D FEATURES: E • Designed for broadband operation.
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BLF522
BLF522
040x45°
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ASI10581
Abstract: CBSL15
Text: CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI CBSL15 is Designed for A .040x45° B C 2XØ.130 4X .025 R FEATURES: .115 .430 D • • • Omnigold Metalization System E F .125 G H I J K MAXIMUM RATINGS 2.5 A IC 48 V
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CBSL15
CBSL15
040x45°
ASI10581
ASI10581
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ASI10670
Abstract: UHBS30-1
Text: UHBS30-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI UHBS30-1 is Designed for A .040x45° FEATURES: B C 2XØ.130 4X .025 R .115 • • • Omnigold Metalization System .430 D E F .125 G H I MAXIMUM RATINGS J K 9.0 A IC
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UHBS30-1
UHBS30-1
040x45°
ASI10670
ASI10670
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1250H
Abstract: ASI10671 UHBS30-2
Text: UHBS30-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-2 is Designed for PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° • • • Omnigold Metalization System B C 2XØ.130 4X .025 R .115 .430 D E .125 F G H MAXIMUM RATINGS I IC 9.0 A VCBO
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UHBS30-2
UHBS30-2
040x45°
ASI10671
1250H
ASI10671
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ASI10669
Abstract: UHBS15-2
Text: UHBS15-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS15-2 is Designed for PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° • • • Omnigold Metalization System B C 2XØ.130 4X .025 R .115 .430 D E .125 F G H MAXIMUM RATINGS I IC 2.0 A VCBO
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UHBS15-2
UHBS15-2
040x45°
ASI10669
ASI10669
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ASI10668
Abstract: UHBS15-1
Text: UHBS15-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS15-1 is Designed for PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° • • • Omnigold Metalization System B C 2XØ.130 4X .025 R .115 .430 D E .125 F G H MAXIMUM RATINGS I IC 2.0 A VCBO
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UHBS15-1
UHBS15-1
040x45°
ASI10668
ASI10668
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mrf892
Abstract: No abstract text available
Text: MRF892 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF892 is Designed for Class AB, Cellular Base Station Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° B C 2XØ.130 4X .025 R • Internal Input Matching Network • PG =8.5 dB at 14 W/900 MHz
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MRF892
MRF892
040x45°
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MRF846
Abstract: No abstract text available
Text: MRF846 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF846 is Designed for UFH Large-Signal, Common Base Amplifier Applicatons Up to 960 MHz. PACKAGE STYLE .230 6L FLG A .040x45° B C 2XØ.130 4X .025 R .115 FEATURES INCLUDE: .430 D E • Input Matching Network
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MRF846
MRF846
040x45°
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cbsl30 application note
Abstract: ASI10582 CBSL30
Text: CBSL30 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI CBSL30 is Designed for A .040x45° B C 2XØ.130 4X .025 R FEATURES: .115 .430 D • • • Omnigold Metalization System E F .125 G H I J K MAXIMUM RATINGS 7.5 A IC 48V
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CBSL30
CBSL30
040x45°
cbsl30 application note
ASI10582
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ASI10673
Abstract: UHBS60-2
Text: UHBS60-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-2 is Designed for FEATURES: PACKAGE STYLE .230 6L FLG • • • Omnigold Metalization System A .040x45° B C 2XØ.130 4X .025 R .115 .430 D E MAXIMUM RATINGS G IC 9.0 A VCBO 50 V VCEO
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UHBS60-2
UHBS60-2
040x45°
ASI10673
ASI10673
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CBSL15
Abstract: ASI10581
Text: CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL15 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° B C 2XØ.130 4X .025 R • Internal Input Matching Network • PG =8.0 dB at 15 W/960 MHz
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CBSL15
CBSL15
040x45°
ASI10581
ASI10581
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UHBS30-1
Abstract: ASI10670
Text: UHBS30-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-1 is Designed for Class C, FM Base Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° B C 2XØ.130 4X .025 R • Internal Input Matching Network • PG = 7.5 dB at 30 W/900 MHz
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UHBS30-1
UHBS30-1
040x45°
ASI10670
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MRF839F
Abstract: No abstract text available
Text: MRF839F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The MRF839F is Designed for Class AB, Common Emitter Applicatons Up to 960 MHz. A .040x45° B C 2XØ.130 4X .025 R .115 .430 D E FEATURES INCLUDE: G • Input Matching Network • High Gain
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MRF839F
MRF839F
040x45°
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ASI10667
Abstract: UHBM45
Text: UHBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBM45 is Designed for PACKAGE STYLE .230 6L FLG FEATURES: A .040x45° • • • Omnigold Metalization System B C 2XØ.130 4X .025 R .115 .430 D E F .125 G H MAXIMUM RATINGS I IC 9.0 A VCBO 36 V
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UHBM45
UHBM45
040x45°
ASI10667
ASI10667
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CBSL6
Abstract: j1305 ASI10580
Text: CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is a gold metalized epitaxial silicon NPN transistor, designed for high linearity Class-AB cellular base station applications. It also operates in Class-C. PACKAGE STYLE .230 6L FLG A .040x45°
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040x45°
850-960MHz
CBSL6
j1305
ASI10580
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ASI10672
Abstract: UHBS60-1 transistor 355
Text: UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for PACKAGE STYLE .230 6L FLG FEATURES: A .040x45° • • • Omnigold Metalization System B C 2XØ.130 4X .025 R .115 .430 D E .125 F G H MAXIMUM RATINGS I IC 9.0 A VCBO
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UHBS60-1
UHBS60-1
040x45°
ASI10672
ASI10672
transistor 355
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ASI10580
Abstract: No abstract text available
Text: CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The ASI CBSL6 is Designed for A .040x45° FEATURES: B C 2XØ.130 4X .025 R • • • Omnigold Metalization System .115 .430 D E F .125 G H I MAXIMUM RATINGS J K 2.4 A IC DIM
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040x45°
ASI10580
ASI10580
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cbsl30 application note
Abstract: ASI10582 CBSL30
Text: CBSL30 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL30 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG A .040x45° B C 2XØ.130 4X .025 R FEATURES: .115 • Internal Input Matching Network • PG = 7.5 dB at 30 W/960 MHz
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CBSL30
CBSL30
040x45°
230ce
cbsl30 application note
ASI10582
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G296
Abstract: No abstract text available
Text: DCN R EV 288 9 2 DESCRIPTION DATE INITIAL RELEASE 00 BOTTOM VIEW APPROVAL TOP VIEW 040X45' REF. 3 PLCS _®,4A>®AA®,4ATA4®AA AA®,AA©AA,®,A@,-® ® ® ©© © ® ®(sr@® ®:®:® ®© w AC AA^ m ® Y w e ® ©j W mms U C # - ®® ®y§Hg)
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040X45Â
085X45Â
G296-1
G296
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Untitled
Abstract: No abstract text available
Text: P 4 pis -R -è Q (2 pis) N K TOL .25 :œ I CD .13 .13 .25 .13 MIN .13 MAX MAX .13 .13 .13 TOL .010 .030 .005 .005 .010 .005 MIN .005 MAX MAX .005 .005 .005 N 0.13 0.03 .005 .001 1.02x45“ 5* .040x45° 5° P 1.57X45* 5* .062x45’ 5’ Q 3.05 DIA .13 I I
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02x45'
040x45Â
57X45'
062x45-
55NWTTER
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55CX
Abstract: No abstract text available
Text: K —1 TOL CD DIM MILLIMETER A 17.78 B 5.8 4 C 45* .13 5* 5* TOL .030 .005 5* 5* .040X45* .005 .001 .130 DIA .005 .215 .005 .005 .360 1.02X45* .13 3.30 DIA 5.46 9.1 4 .13 .13 .13 I 20.32 .13 .800 .005 J K 3.17 1.52 .25 .13 .125 .060 .010 .005 M N 14.27 5.46
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02X45*
040X45*
55CX
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Untitled
Abstract: No abstract text available
Text: 7 TH IS DRAWING IS U N P U B L IS H E D . COPYRIGHT RELEASED 4 3 2 FOR PUBLICATION A L L RIGHTS BY TYCO ELECTRONICS CORPORATION. 5 6 LOC RES ER VED . DF REVISIO N S DIS T DO LTR A DE S C R IP T IO N REV PER OH14 - 0 0 3 6 - 0 5 DATE DWN APVD 17NOV05 PY DM
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17NOV05
QQ-A-591
040x45°
AR2000
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Untitled
Abstract: No abstract text available
Text: OM1324SMM OM1324NMM OM1324NKM OM1324NTM OM1324STM OM1324N2M 1.5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR APPROVED TO DESC DRAWING 7703405 FEATURES • • • • • • Similar To Industry Standard LM117A Approved To DESC Standardized Military Drawing Number 7703405
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OM1324SMM
OM1324NMM
OM1324NKM
OM1324NTM
OM1324STM
OM1324N2M
LM117A
LCC-20
OM1324NTM
OM1324NMM
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G296
Abstract: TT 2076 M5851 A1011 pin configuration
Text: PACKAGE DIAGRAM O U T L IN E S PIN GRID ARRAY DCN REV _DESCRIPTION_ 17104 01 UPDATED TO STANDARDIZE DRAWING DATE APPROVAL 12/21/89 Z TOP V I E W BOTTOM V I E W /— 0B1 3 4 5 6 7 /a 9 10 \ O D O © © @ K © J ©( H ©( G ©(
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G68-1
G447-1
G296
TT 2076
M5851
A1011 pin configuration
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