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    IS21E Price and Stock

    Integrated Silicon Solution Inc IS21ES08GA-JCLI-TR

    IC FLASH 64GBIT EMMC 153VFBGA
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    DigiKey IS21ES08GA-JCLI-TR Digi-Reel 1,494 1
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    IS21ES08GA-JCLI-TR Cut Tape 1,494 1
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    Mouser Electronics IS21ES08GA-JCLI-TR 2,828
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    Win Source Electronics IS21ES08GA-JCLI-TR 6,651
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    Integrated Silicon Solution Inc IS21ES08GA-JQLI-TR

    IC FLASH 64GBIT EMMC 100LFBGA
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    DigiKey IS21ES08GA-JQLI-TR Reel 1,000 1,000
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    Avnet Americas IS21ES08GA-JQLI-TR Reel 10 Weeks 1,000
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    Mouser Electronics IS21ES08GA-JQLI-TR 969
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    Newark IS21ES08GA-JQLI-TR Bulk 1,000
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    Avnet Asia IS21ES08GA-JQLI-TR 12 Weeks 1,000
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    Avnet Silica IS21ES08GA-JQLI-TR 14 Weeks 1,000
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    New Advantage Corporation IS21ES08GA-JQLI-TR 2,000 1
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    Integrated Silicon Solution Inc IS21ES16G-JQLI

    IC FLASH 128GBIT EMMC 100LFBGA
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    Integrated Silicon Solution Inc IS21ES64G-JCLI

    IC FLASH 512GBIT EMMC 153VFBGA
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    Avnet Silica IS21ES64G-JCLI 44 Weeks 152
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    Integrated Silicon Solution Inc IS21ES04G-JQLI

    IC FLASH 32GBIT EMMC 100LFBGA
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    Bristol Electronics IS21ES04G-JQLI 3
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    Quest Components IS21ES04G-JQLI 80
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    IS21ES04G-JQLI 2
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    NexGen Digital IS21ES04G-JQLI 1
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    Avnet Asia IS21ES04G-JQLI 196 12 Weeks 98
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    Avnet Silica IS21ES04G-JQLI 44 Weeks 98
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    Win Source Electronics IS21ES04G-JQLI 3,110
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    Find more IS21E price and stock on Findchips.com

    IS21E Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IS21ES04G-JCLI Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC FLASH 32G EMMC 153VFBGA Original PDF
    IS21ES04G-JCLI-TR Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC FLASH 32G EMMC 153VFBGA Original PDF
    IS21ES04G-JQLI Integrated Silicon Solution IC FLASH 32GBIT EMMC 100LFBGA Original PDF
    IS21ES08G-JCLI Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC FLASH 64G EMMC 153VFBGA Original PDF
    IS21ES08G-JCLI-TR Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC FLASH 64G EMMC 153VFBGA Original PDF
    IS21ES08G-JQLI Integrated Silicon Solution IC FLASH 64GBIT EMMC 100LFBGA Original PDF
    IS21ES16G-JCLI Integrated Silicon Solution IC FLASH 128GBIT EMMC 153VFBGA Original PDF
    IS21ES16G-JQLI Integrated Silicon Solution IC FLASH 128GBIT EMMC 100LFBGA Original PDF
    IS21ES32G-JCLI Integrated Silicon Solution IC FLASH 256GBIT EMMC 153VFBGA Original PDF
    IS21ES32G-JQLI Integrated Silicon Solution IC FLASH 256GBIT EMMC 100LFBGA Original PDF
    IS21ES64G-JCLI Integrated Silicon Solution IC FLASH 512GBIT EMMC 153VFBGA Original PDF
    IS21ES64G-JQLI Integrated Silicon Solution IC FLASH 512GBIT EMMC 100LFBGA Original PDF
    IS21ES64G-JQLI Integrated Silicon Solution IC FLASH 512GBIT EMMC 100LFBGA Original PDF

    IS21E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5507

    Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 NE661M04-T2 24-Hour 2SC5507 NE661M04-T2 S21E 842 ic 2912

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF IS21EI2 OT-343 NE661M04 NE661M04

    transistor MJE 2955

    Abstract: 842 ic SOT 663 footprint TRANSISTOR nf 842
    Text: SILICON TRANSISTOR NE661M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 2e-12 1e-11 08e-12 transistor MJE 2955 842 ic SOT 663 footprint TRANSISTOR nf 842

    az 2732 132

    Abstract: 2SC5507 NE661M04 NE661M04-T2-A S21E max10022
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 az 2732 132 2SC5507 NE661M04-T2-A S21E max10022

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz • •


    Original     		PDF NE663M04 IS21EI2 OT-343 NE663M04

    417-116

    Abstract: 2SC5509 NE663M04 NE663M04-T2-A S21E
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz


    Original     		PDF NE663M04 IS21EI2 OT-343 NE663M04 417-116 2SC5509 NE663M04-T2-A S21E

    ca 9088

    Abstract: 2SC5509 NE663M04 NE663M04-T2 S21E transistor c 6093
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz


    Original     		PDF NE663M04 IS21EI2 OT-343 NE663M04 ca 9088 2SC5509 NE663M04-T2 S21E transistor c 6093

    ua 722 fc

    Abstract: 2SC5507 NE661M04 NE661M04-T2 S21E max10022
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 ua 722 fc 2SC5507 NE661M04-T2 S21E max10022

    314-106

    Abstract: transistor c 6093 417-116 2SC5509 NE663M04 NE663M04-T2 S21E 10318 SOT-343 6428 flat
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 17 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz •


    Original     		PDF NE663M04 IS21EI2 OT-343 NE663M04 prov88 24-Hour 314-106 transistor c 6093 417-116 2SC5509 NE663M04-T2 S21E 10318 SOT-343 6428 flat

    NE688

    Abstract: S21E UPA814T UPA814T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		PDF UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour S21E UPA814T-T1

    transistor Bf 444

    Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		PDF UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )


    OCR Scan     		PDF 2SC4394 IS21el2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz


    OCR Scan     		PDF 2SC4322 IS21ei2

    ic power 22E

    Abstract: power 22E IC 12E MARKING
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : 1.6MAX 4.6 MAX. . Low Noise Figure, High Gain. 0.4±a05 1.7MAX. . N F = 1 .ldB, IS21e l2=9.5dB f=lGHz MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC3607 IS21e CL4-a05 ic power 22E power 22E IC 12E MARKING

    transistor bf 458

    Abstract: Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UpA8 6T OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: P A C K A G E OUTLINE S06 (Top View) 2 NE685 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21EI2 = 8.5 dB TYP at 2 GHz


    OCR Scan     		PDF NE685 IS21EI2 UPA806T 4e-12 18e-12 2e-12 UPA806T transistor bf 458 Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3

    VHF-UHF Band Low Noise Amplifier

    Abstract: marking lob
    Text: 2SC4315 SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS . Low Noise . NF=l.ldB, Unit in mm + 0.2 2.9 -0.3 Figure, High Gain. IS21ei 2=14dB f=lGHz i 2 »-E a 0.55 M A X I M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC4315 IS21ei 012IGURE VHF-UHF Band Low Noise Amplifier marking lob

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE VHF'UHF 2SC3268 BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : L 6 MAX 4.6 max . . NF=1.7dB, IS21el2=15.0dB f=500MHz . NF=2dB, |S2Xel2=9.5dB (f=1000MHz) + 0108 MAXIMUM RATINGS (Ta=25°C) (145 — Cl05 CHARACTERISTIC


    OCR Scan     		PDF 2SC3268 IS21el2 500MHz) 1000MHz) a4-a05

    transistor L44

    Abstract: chip die npn transistor ma4t856 l44 transistor npn C 1740
    Text: V a n A M P ct o m p a n y Moderate Power High fT NPN Silicon Transistor MA4T856 Series V3.00 Package Outline Features • High Output Power - 16 dBm PidB @ 1 GHz - 10 dBm PldB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fx • High Power Gain - IS21EI2 = 15 dB @ 1 GHz


    OCR Scan     		PDF IS21EI2 MA4T856 OT-23 OT-143 avail-8883 transistor L44 chip die npn transistor l44 transistor npn C 1740

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3606 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications -El- F e a tu re s • Low Noise Figure, High Gain • N F = 1 .1 d B , IS21el2 = 1 1 d B f = 1GHz -EE- A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )


    OCR Scan     		PDF 2SC3606 IS21el2

    2SC4392

    Abstract: No abstract text available
    Text: 2SC4392 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r U H F - C B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • • U n it in mm High Gain : IS21el2= 12dB Typ. Low Noise Figure: NF = 2.3dB (Typ.) High frp : fr = 6.5GHz(Typ.) M A X IM U M R A TIN G S (Ta = 25°C)


    OCR Scan     		PDF 2SC4392 IS21el2= SC-70 S21el2 2SC4392

    IS21E

    Abstract: Transistor S1D
    Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE S1D43 tentative OVHF UHF BAND LOW NOISE AM P L I F IE R APLICATIONS Iß I ooWöI Low Noise : Figure : NF=1.5dB(at f=2GHz) High Gain : IS21e 12=16dB(at f=2GHz) MAXIMUM RATINGS SYMBOL RATING UNIT


    OCR Scan     		PDF S1D43 IS21e 1S21e Transistor S1D

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4317 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • Low Noise Figure, High Gain • NF = 1.1dB, IS21el2 = 1 3 d B f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )


    OCR Scan     		PDF 2SC4317 IS21el2

    ne666

    Abstract: 21421 Series ic 74600 NE686
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fTof 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21EI2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 = 11 dB @ 1 V, 5 mA, 2 GHz


    OCR Scan     		PDF IS21EI2 NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 ne666 21421 Series ic 74600

    tt 18934

    Abstract: 30i sot23 5140 SN 74500
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z


    OCR Scan     		PDF IS21El2 IS21EI2 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 tt 18934 30i sot23 5140 SN 74500