Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR COTCO LED LAMP MODEL No : DOC. No : LC503QBG1-15G A 24Nov03 Description: 15 Degree 5mm Round LED Lamp in Bluish Green Color with Water Transparent Lens and Stopper Dice Material: InGaN Confirmed by Customer: Date: ATTENTION OBSERVE PRECAUTIONS
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LC503QBG1-15G
24Nov03
18inch2)
ECN-H20030404
COTCO-D-074
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Untitled
Abstract: No abstract text available
Text: 70 MHz Low-Loss Filter 7 MHz Bandwidth Part Number SF0070BA03057S Micro Networks., 324 Clark Street, Worcester, MA 01606, USA tel: 508-852-5400, fax:508-852-8456, www.micronetworks.com TYPICAL PERFORMANCE Horizontal: 4.0 MHz/div Vertical from top : Magnitude
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SF0070BA03057S
24-Nov-03
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Untitled
Abstract: No abstract text available
Text: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-02V
OD-523
BAR63V-02V
OD523
D-74025
24-Nov-03
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Si4750DY
Abstract: Si4750DY-T1
Text: Si4750DY Vishay Siliconix New Product Smart Power High-Side Switch PRODUCT SUMMARY Overvoltage Protection Vbb AZ (V) Operating Voltage Vbb(on) (V) On-State Resistance RON (mW) Nominal Load Current IL(nom) (A) 41 5 − 15 50 2.0 FEATURES D D D D D D D Overload Protection
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Si4750DY
18-Jul-08
Si4750DY-T1
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Si4703DY
Abstract: Si4703DY-T1
Text: Si4703DY Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 V 30 rDS(on) (W) ID (A) 0.046 @ VGS2 = 10 V 4.0 0.066 @ VGS2 = 4.5 V 3.3 5, 6, 7 SO-8 3, 4 VIN S1 1 8 VHV VON/OFF 2 7 VIN S2 3 6 VIN S2 4 5 VIN VHV VON/OFF S2 Q2 8 Q1 2 Top View
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Si4703DY
Si4703DY-T1
18-Jul-08
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vishay fscm 18612
Abstract: RNC90Z
Text: Military Established Reliability Vishay Foil Resistors Bulk Metal Foil Technology RNC90Y and RNC90Z to MIL-PRF-55182/9 FEATURES • QPL product with established reliability. THROUGH HOLE Product may not be to scale Vishay Military Established Reliability resistors are available
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RNC90Y
RNC90Z
MIL-PRF-55182/9
25ppm)
RNC90Y]
RNC90Z]
121Kohms
tole90Y
MIL-PRF-55182
vishay fscm 18612
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Si7421DN
Abstract: Si7421DN-T1
Text: Si7421DN Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −9.8 0.043 @ VGS = −4.5 V −7.4 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC
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Si7421DN
07-mm
Si7421DN-T1--E3
S-32411--Rev.
24-Nov-03
Si7421DN-T1
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s3242
Abstract: MJ 68A SUD50N02-06P
Text: SUD50N02-06P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.006 @ VGS = 10 V 26 0.0095 @ VGS = 4.5 V 21 APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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SUD50N02-06P
O-252
08-Apr-05
s3242
MJ 68A
SUD50N02-06P
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03ATEX
Abstract: No abstract text available
Text: CNY65Exi VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage Top View Features • Suitable for intrinsic safety circuits according to test certificate No. PTB 03 ATEX 2033 U • Isolation material according to UL94 - VO - flammability class
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CNY65Exi
0303/DIN
CNY65Exi
D-74025
24-Nov-03
03ATEX
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Si4750DY
Abstract: Si4750DY-T1
Text: Si4750DY Vishay Siliconix New Product Smart Power High-Side Switch PRODUCT SUMMARY Overvoltage Protection Vbb AZ (V) Operating Voltage Vbb(on) (V) On-State Resistance RON (mW) Nominal Load Current IL(nom) (A) 41 5 − 15 50 2.0 FEATURES D D D D D D D Overload Protection
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Si4750DY
S-32411--Rev.
24-Nov-03
Si4750DY-T1
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Si7425DN
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.016 @ VGS = −4.5 V −12.6 0.022 @ VGS = −2.5 V −10.8 0.029 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFETS: 1.8-V Rated
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Si7425DN
07-mm
Si7425DN-T1--E3
S-32411--Rev.
24-Nov-03
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Si2304BDS
Abstract: Si2304BDS-T1
Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3
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Si2304BDS
O-236
OT-23)
Si2304BDS-T1--E3
S-32412--Rev.
24-Nov-03
Si2304BDS-T1
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SUM60N04-05C
Abstract: No abstract text available
Text: SUM60N04-05C Vishay Siliconix New Product N-Channel 40-V D-S MOSFET with Current Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0054 @ VGS = 10 V 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature
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SUM60N04-05C
S-32417--Rev.
24-Nov-03
SUM60N04-05C
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SUM110N08-07
Abstract: No abstract text available
Text: SUM110N08-07 Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 110 APPLICATIONS D Automotive − Boardnet 42-V EPS and ABS
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SUM110N08-07
O-263
S-32414--Rev.
24-Nov-03
SUM110N08-07
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Si9936BDY
Abstract: No abstract text available
Text: Si9936BDY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.0 0.052 @ VGS = 4.5 V 4.9 D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si9936BDY—E3
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Si9936BDY
Si9936BDY--E3
Si9936BDY-T1--E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si3442BDV Vishay Siliconix New Product N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.057 @ VGS = 4.5 V 4.2 0.090 @ VGS = 2.5 V 3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3
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Si3442BDV
Si3442BDV-T1--E3
S-32418--Rev.
24-Nov-03
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Untitled
Abstract: No abstract text available
Text: Si4701DY Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 V 30 rDS(on) (W) ID (A) 0.015 @ VGS2 = 10 V 7.0 0.021 @ VGS2 = 4.5 V 6.0 5, 6, 7 SO-8 3, 4 VIN S1 1 8 VHV VON/OFF 2 7 VIN S2 3 6 VIN S2 4 5 VIN VHV VON/OFF S2 Q2 8 Q1 2 Top View
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Si4701DY
Si4701DY-T1
MIL-STD-883D
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4955DY Vishay Siliconix New Product Assymetrical Dual P-Channel 30-V/20-V D-S MOSFETs FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.054 @ VGS = −10 V −5.0 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 0.100 @ VGS = −4.5 V
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Si4955DY
0-V/20-V
Si4955DY--E3
Si4955DY-T1--E3
08-Apr-05
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LCD display module 20x2 characters
Abstract: LCD display 20X2 Sitronix st7920 LCD module 20X2 5V 24 pin diagram of lcd display 20x2 lcd 20x2 LM16032ABC-0B 20X2 LCD ST7920 ST7921
Text: LM16032ABC-0B LCD Module User Manual Shenzhen Topway Technology Co., Ltd. Rev. 0.1 URL: Descriptions Preliminary New release www.towpaydispaly.com www.topwaysz.com Release Date 24-Nov-03 Document Name: LM16032ABC-0B-Manual-Rev0.1.doc Page: 1 of 12 TOPWAY LCD Module User Manual
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LM16032ABC-0B
24-Nov-03
LM16032ABC-0B-Manual-Rev0
LCD display module 20x2 characters
LCD display 20X2
Sitronix st7920
LCD module 20X2 5V
24 pin diagram of lcd display 20x2
lcd 20x2
LM16032ABC-0B
20X2 LCD
ST7920
ST7921
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72562
Abstract: No abstract text available
Text: Si4434DY Vishay Siliconix New Product N-Channel 250-V D-S MOSFET FEATURES D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested PRODUCT SUMMARY VDS (V) 250 rDS(on) (W) ID (A) 0.155 @ VGS = 10 V 3.0 0.162 @ VGS = 6.0 V 2.9 APPLICATIONS
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Si4434DY
Si4434DY-T1
S-32407--Rev.
24-Nov-03
72562
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SUM110N08-10
Abstract: No abstract text available
Text: SUM110N08-10 Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 @ VGS = 10 V 110 D TrenchFETr Power MOSFET D New Low Thermal Resistance Package APPLICATIONS D Automotive − Boardnet 42-VEP and ABS
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SUM110N08-10
42-VEP
O-263
S-32413--Rev.
24-Nov-03
SUM110N08-10
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Si4931DY
Abstract: Si4931DY-T1
Text: Si4931DY Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.018 @ VGS = −4.5 V −8.9 APPLICATIONS 0.022 @ VGS = −2.5 V
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Si4931DY
Si4931DY--E3
Si4931DY-T1--E3
08-Apr-05
Si4931DY-T1
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Untitled
Abstract: No abstract text available
Text: 592D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • • • • • PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C. To + 125°C with voltage derating. New extended range offerings.
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EIA-481-1
178mm]
330mm]
535BAAC
24-Nov-03
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Si5853DC
Abstract: Si5856DC S-32420
Text: Si5856DC Vishay Siliconix New Product N-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D D D D APPLICATIONS D Buck Rectifier Switch, Buck-Boost
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Si5856DC
Si5853DC
S-32420--Rev.
24-Nov-03
S-32420
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