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    24N60A Search Results

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    24N60A Price and Stock

    IXYS Corporation IXSH24N60A

    IGBT 600V 48A 150W TO247
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    IXYS Corporation IXGH24N60A

    IGBT 600V 48A 150W TO247AD
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    IXYS Corporation IXSH24N60AU1

    IGBT 600V 48A 150W TO247
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    IXYS Corporation IXGH24N60AU1

    IGBT 600V 48A 150W TO247AD
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    Advanced Energy Industries Inc 40C24-N60-I10-AD-WS-DA-H

    Non-Isolated DC/DC Converters HPC-Series DC to HVDC Converter, Single output (Unipolar), +24V Input, -40kV DC HVout, 60W, Chassis/Thru-hole Mount, Regulated, I10 Interface 0 to +10 Monitors/Controls, Arc detection, HVout flying lead, Male DA-15 type connector, Heatsink
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    Mouser Electronics 40C24-N60-I10-AD-WS-DA-H
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    24N60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    24N60

    Abstract: 24N60A 1365c
    Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


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    PDF 24N60 24N60A 24N60 24N60A 1365c

    G20N60

    Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
    Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48


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    PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247

    24N60A

    Abstract: 24N60AU1
    Text: HiPerFASTTM IGBT IXGH 24N60A VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 48 A I C90 TC = 90°C 24


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    PDF 24N60A O-247 24N60A 24N60AU1

    24N60AU1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode VCES IXSH 24N60U1 IXSH 24N60AU1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR T J = 25°C to 150°C600 T J = 25°C to 150°C; R GE = 1 MW V 600 V V GES V GEM Continuous Transient ±20 ±30 V V I C25


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    PDF 24N60U1 24N60AU1 O-247 24N60AU1

    24N60A

    Abstract: 24N60
    Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


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    PDF 24N60 24N60A O-247 24N60A

    24n60au1

    Abstract: 24N60U1 24n60 TO-247 weight C600 igbt 24n60au1 24N60U
    Text: HiPerFASTTM IGBT with Diode VCES IXSH 24N60U1 IXSH 24N60AU1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR T J = 25°C to 150°C600 T J = 25°C to 150°C; R GE = 1 MW V 600 V V GES V GEM Continuous Transient ±20 ±30 V V I C25


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    PDF 24N60U1 24N60AU1 O-247 24n60au1 24N60U1 24n60 TO-247 weight C600 igbt 24n60au1 24N60U

    24N60AU1

    Abstract: NS525
    Text: HiPerFASTTM IGBT with Diode IXSH 24N60AU1 Combi Pack VCES IC25 VCE sat tfi = = = = 600 V 48 A 2.7 V 275 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V


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    PDF 24N60AU1 O-247 150tching 24N60AU1 NS525

    24N60A

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXSH 24N60A VCES IC25 VCE sat tfi Maximum Ratings TO-247 AD = = = = 600 V 48 A 2.7 V 275 ns Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    PDF 24N60A O-247 24N60A

    24N60AU1

    Abstract: 24N60A IXGH24N60A 24N60AU
    Text: HiPerFASTTM IGBT IXGH 24N60A VCES IC25 VCE sat tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


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    PDF 24N60A 24N60A 24N60AU1 IXGH24N60A 24N60AU

    24N60

    Abstract: 40N60A4 40n60 robot control 24N60A 40N60A D-68623 gate drive circuit for igbt 40n60a 4
    Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 600 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous


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    PDF 24N60 24N60A O-247 40N60A 24N60 40N60A4 40n60 robot control 24N60A 40N60A D-68623 gate drive circuit for igbt 40n60a 4

    931 diode smd

    Abstract: g20n60
    Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient


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    PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1 IXGH24N60AU1S 4bflb22t. 931 diode smd g20n60

    6008B

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 24N60AU1 Symbol Test Conditions Maximum Ratings V C ES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T,J = 25° C to 150° C; RCat„ = 1 MQ 600 V V t ges Continuous +20 V V GEM Transient t30 V ^C 25 Tc -2 5 C 48 A ^C90 T c = 9 0 3C


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    PDF 24N60AU1 6008B

    Untitled

    Abstract: No abstract text available
    Text: PIXYS 1 HiPerFAST IGBT V CES IXGH 24N60A ^C25 V v CE sat tfi 600 V 48 A 2.7 V 275 ns « Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Td = 25 °C to 150°C; RQE = 1 M£2 600 V v GES Continuous ±20 V V GEM Transient ±30 V ^ C25 Tc = 25 °C


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    PDF 24N60A 24N60A 24N60AU1 4bflb22b

    smd diode JC 0p

    Abstract: DIODE SMD GEM IXGH24N60AU1S
    Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600


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    PDF 24N60AU1 IXGH24N60AU1S O-247 24N60AU1S) 24N60AU1S D94006DE, smd diode JC 0p DIODE SMD GEM IXGH24N60AU1S

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT IXSH 24N60 IXSH 24N60A VC E S ^C25 V CE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability G_ Sym bol Test Conditions Maximum Ratings V ces Tj = 25°C to 15 0CC 6 00 V v CGR T j = 25°C to 150°C; R GE = 1 M Q 600 V v GES


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    PDF 24N60 24N60A O-247 24N60U1 24N60AU1

    IFR 640

    Abstract: S41c 24N60A IXGA24N60A
    Text: n i x Y S HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = w CES ^C25 v v CE sat tfi 600 V 48 A 2.7 V 275 ns Prelim inary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous


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    PDF 24N60A 24N60A O-247 O-263 IFR 640 S41c IXGA24N60A

    IXGH24N60A

    Abstract: No abstract text available
    Text: nixYS HiPerFAST IGBT IXGH 24N60A v CES VCE sat = 600 V = 48 A = 2.7 V t = 110 ns ^C25 Maximum Ratings Symbol Test Conditions V * CES T j = 2 5 °C to 1 5 0 °C 600 V v CGR T,J = 25° C to 150° C;’ R C j„fc= 1 Mi2 600 V VGES Continuous +20 V VoEM


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    PDF 24N60A O-247 IXGH24N60A 24N60A

    IXGA24N60A

    Abstract: No abstract text available
    Text: DIXYS IXGA 24N60A IXGH 24N60A HiPerFAST IGBT = = = = CES C25 v ¥ CE sat tfi 600 V 48 A 2.7 V 275 ns Preliminary data Maximum Ratings Symbol Test Conditions v’ c e s ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 M£2 600 V v* GES Continuous


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    PDF 24N60A 24N60A O-263 O-247 24N60AU1 D94006DE, IXGA24N60A

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS V CES HiPerFAST IGBT 600 V 600 V IXSH 24N60 IXSH 24N60A V C25 CE sat 48 A 2.2 V 48 A 2.7 V Short Circuit SOA Capability G_ Maximum Ratings Sym bol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V


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    PDF 24N60 24N60A Collect4N60A 24N60 24N60A 24N60U1 24N60AU1

    Untitled

    Abstract: No abstract text available
    Text: nixYS HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = CES ^C25 vv CE sat t 600 V 48 A 2.7 V 275 ns P relim inary data Symbol Test Conditions vCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 600 V vt g e s vGEM Continuous ±20 V Transient


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    PDF 24N60A flb22b 24N60A 24N60AU1 D94006DE,

    24N60AU

    Abstract: ixsh24n60au1 24n60au1 TO-247 weight
    Text: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V


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    PDF 24N60U1 24N60AU1 IXSH24N60AU1 1999IXYS 24N60AU ixsh24n60au1 TO-247 weight

    Untitled

    Abstract: No abstract text available
    Text: DIXYS T r t" \ » HiPerFAST IGBT with Diode IXSH 24N60AU1 IXSH 24N60AU1S v CES ^C25 v ¥ CE sat Combi Pack tfi 600 V 48 A 2.7 V 275 ns oc G P relim inary data Symbol Test Conditions VCES Tj VCGR T.J = 25°C to 1 50°C;5 RrF = Cat = Maximum Ratings 25°C to 150°C


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    PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) 24N60AU1)

    40N60A

    Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
    Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A


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    PDF 2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A

    1XGH24N60A

    Abstract: b236 b237 TXYS IXGH/24N60A
    Text: inixYS HiPerFAST IGBT V CES IXGH 24N60A ^C25 v * CE sat l fi Symbol Test Conditions 4 Maximum Ratings VCES Tj = 25°C to 150°C 600 VCGR Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES v GEM Continuous ±20 V T ransient ±30 V ^C25 Tc -2 5«C 48 A ^090 Tc =90°C


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    PDF 24N60A O-247 24N60AU1 B2-37 1XGH24N60A b236 b237 TXYS IXGH/24N60A