48-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ23C32040AL, 23C32080AL 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C32040AL and µ23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is
|
Original
|
PDF
|
PD23C32040AL,
23C32080AL
32M-BIT
16-BIT
PD23C32040AL
PD23C32080AL
48-pin
44-pin
|
48-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT 23C32340, 23C32380 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The μ23C32340 and μ23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is
|
Original
|
PDF
|
PD23C32340,
23C32380
32M-BIT
16-BIT
PD23C32340
PD23C32380
48-pin
|
Untitled
Abstract: No abstract text available
Text: データ・シート MOS 集積回路 MOS Integrated Circuit 23C32040AL,23C32080AL 32M ビット マスク・プログラマブル ROM 4M ワードx8 ビット（バイト・モード）／2M ワード×16 ビット（ワード・モード） ページ・アクセス・モード
|
Original
|
PDF
|
PD23C32040AL
23C32080AL
PD23C32040AL,
PD23C32080AL
PD23C32080AL
TSOP44
PD23C32040AL
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ23C32040AL, 23C32080AL 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C32040AL and µ23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is
|
Original
|
PDF
|
PD23C32040AL,
23C32080AL
32M-BIT
16-BIT
PD23C32040AL
PD23C32080AL
48-pin
PD23C32040AL)
|
48-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ23C32340, 23C32380 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C32340 and µ23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is
|
Original
|
PDF
|
PD23C32340,
23C32380
32M-BIT
16-BIT
PD23C32340
PD23C32380
48-pin
|
48-PIN
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ23C32040AL, 23C32080AL 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C32040AL and µ23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is
|
Original
|
PDF
|
PD23C32040AL,
23C32080AL
32M-BIT
16-BIT
PD23C32040AL
PD23C32080AL
48-pin
44-pin
|
23C32
Abstract: 48-PIN marking a20
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ23C32343, 23C32383 32M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT PAGE ACCESS MODE Description The µ23C32343 and µ23C32383 are 33,554,432 bits mask-programmable ROM. The word organization is 2,097,152 words by 16 bits.
|
Original
|
PDF
|
PD23C32343,
23C32383
32M-BIT
16-BIT
PD23C32343
PD23C32383
48-pin
23C32
marking a20
|
48-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT 23C32040AL, 23C32080AL 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The μ23C32040AL and μ23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is
|
Original
|
PDF
|
PD23C32040AL,
23C32080AL
32M-BIT
16-BIT
PD23C32040AL
PD23C32080AL
48-pin
44-pin
|
48-PIN
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ23C32340, 23C32380 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µ23C32340 and µ23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is
|
Original
|
PDF
|
PD23C32340,
23C32380
32M-BIT
16-BIT
PD23C32340
PD23C32380
48-pin
|
Untitled
Abstract: No abstract text available
Text: TMS45160, TMS45160P 262ā144ĆWORD BY 16ĆBIT HIGHĆSPEED DYNAMIC RANDOMĆACCESS MEMORIES SMHS160D − AUGUST 1992 − REVISED JUNE 1995 D D D DZ PACKAGE TOP VIEW This data sheet is applicable to all TMS45160/Ps symbolized with Revision “D” and subsequent
|
Original
|
PDF
|
TMS45160,
TMS45160P
SMHS160D
TMS45160/Ps
45160/P-60
45160/P-70
45160/P-80
|
TMS416169
Abstract: TMS418169
Text: TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS SMKS886C – MAY1995 – REVISED MARCH 1996 D D D D D D D D D D Organization . . . 1 048 576 Words by 16 Bits Single 5-V Power Supply Performance Ranges: ACCESS ACCESS ACCESS READ OR
|
Original
|
PDF
|
TMS416169,
TMS418169
1048576-WORD
16-BIT
SMKS886C
MAY1995
41x169/P-60
41x169/P-70
41x169/P-80
024-Cycle
TMS416169
TMS418169
|
01C09
Abstract: No abstract text available
Text: GoldStar 23C32000FW 4M x 8/2M x 16BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C32000FW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152x 16 bits (word mode) and has an access time of 120/150 ns. It needs no ex
|
OCR Scan
|
PDF
|
GM23C32000FW
16BIT
23C32000FW
44-SOP,
100pF*
402fl757
00D4D4f
01C09
|
23C32000a
Abstract: ICX 639 23c3200
Text: 23C32000A LG Semicon Co.,Ltd. 2,097,152 x 16 BIT CMOS MASK ROM Pin Configuration Description 42 DIP The G M 23C32000A high performance read only memory is organized as 2,097,152 x 16 bits and has an access time o f 120/150ns. It needs no external control clock to assure simple operation, because of
|
OCR Scan
|
PDF
|
GM23C32000A
120/150ns.
23C32000A
GM23C32000A
120/150ns
ICX 639
23c3200
|
23c3200
Abstract: No abstract text available
Text: PRELIMINARY KM 23C3200C^^ CMOS MASK ROM 32M-Bit 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 X 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V
|
OCR Scan
|
PDF
|
23C3200C^
32M-Bit
150ns
100/iA
44-pin,
KM23C32000G
KM23C32000G)
23c3200
|
|
|
2332 eprom
Abstract: 23C32 2332 rom 2532EPROM
Text: SOLID STATE ^ SCIENTIFIC 23C32 883/23C32 4096 x 8 Static CMOS ROM Features • ■ ■ ■ Pin Configuration Fast Access Time Selection: 150ns/200ns/300ns Low Operating Current: 10mA Max. Low Standby Current: 50 nA Max. Commercial, Industrial and Military Temperature
|
OCR Scan
|
PDF
|
SCM23C32
883/23C32
150ns/200ns/300ns
883/23C32M
SCM23C32R
23C32
2332 eprom
2332 rom
2532EPROM
|
4Kx8 rom ttl
Abstract: 2532 eprom 23C32 2732 eprom eprom 2532 2732 rom cmos 2532EPROM 2732 cmos eprom 4Kx8 rom 24 pin
Text: SILICON INTEGRATE» S'ÌE D & 2 S 3 & & C\ QQ00004 1 T -' l/-Ìp "/3'/5" ft CMOS M A S K RO M SIS 23C32/23C32A 4Kx8 CMOS MASK ROM FEATURE PIN ASSIGNMENT •Access time 150/200ns •Single + 5V power supply •Pin Compatible with 2532 EPROM •TTL Compatible Inputs and Outputs
|
OCR Scan
|
PDF
|
QQ00004
23C32/23C32A
150/200ns
23C32A
23C32
23C32
23C33A
23C33
23C33
23C33A
4Kx8 rom ttl
2532 eprom
2732 eprom
eprom 2532
2732 rom cmos
2532EPROM
2732 cmos eprom
4Kx8 rom 24 pin
|
Untitled
Abstract: No abstract text available
Text: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM 1 SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP VIEW ACCESS ACCESS ACCESS TIME TIME TIME '41x160-60 41x160-70 '41x160-80 • • • • • • • • tRAC MAX 60 ns 70 ns SO n* *CAC
|
OCR Scan
|
PDF
|
SMJ416160,
SMJ418160
1048576-WORD
16-BIT
SGMS720A
41x160-60
41x160-70
41x160-80
|
Untitled
Abstract: No abstract text available
Text: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 891C - A U G U S T 1996 - R EVISED O C TO BE R 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.
|
OCR Scan
|
PDF
|
TMS418160A
16-BIT
TMS418160As
1024-Cycle
R-PDSO-J42)
18160A
|
Untitled
Abstract: No abstract text available
Text: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70
|
OCR Scan
|
PDF
|
TMS416160,
TMS416160P
576-WORD
16-BIT
SMKS660-DECEMBER
416160/P-60
416160/P-70
416160/P-80
|
Untitled
Abstract: No abstract text available
Text: HUALON MICROELECTRONICS E4E D MSTflOMl 000004b □ • 23C32 4K x 8 MASK ROM : !: a Features * * * * * * * * Access time 200/300ns Max. Single +5V power supply. TTL compatible inputs and outputs. Three-state outputs. Pin compatible with 2532 EPROM. Two programmable chip selects for output control,
|
OCR Scan
|
PDF
|
000004b
HM23C32
200/300ns
23C32
|
TMS 1070 HL
Abstract: No abstract text available
Text: T M S 4 1 6 1 6 9 A, T M S 4 1 8 1 6 9 A T M S 4 2 6 1 6 9 A , TMS 4 26 1 69 A P, T M S 4 2 8 1 6 9 A , T M S 4 2 8 1 6 9 A P 1 0 4 8 5 7 6 - W O R D BY 1 6- BI T E X T E N D E D DATA O U T H I G H - S P E E D D R A M S S M K S 892-A U G U S T 1996 TIME TIME
|
OCR Scan
|
PDF
|
|
S891C
Abstract: SS828
Text: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S891C -A U G U S T 1996-R E V IS E D OCTOBER 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E ” and subsequent revisions as described in the device symbolization section.
|
OCR Scan
|
PDF
|
TMS418160A
16-BIT
S891C
1996-R
TMS418160As
1024-Cycle
18160A-50
18160A-60
4181B0A-70
SS828
|
GM23C32200AFW
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Pin Configuration The 23C32200AFW high perform ance read only memory is organized either as 4,194,304 x 8 byte mode or 2,097,152 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure
|
OCR Scan
|
PDF
|
GM23C32200AFW
120/150ns.
44SOP,
015/A
D0Q4770
|
Untitled
Abstract: No abstract text available
Text: 23C3204 32M-BÎT MASK ROM B-BfT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 4M x 8 (byte mode only) • Fast access time - Random access: 100ns (max.) • Current - Operating :60mA - Standby:100uA • Supply voltage - 5V±10% • Package -4 2 pin DIP (600mil)
|
OCR Scan
|
PDF
|
MX23C3204
32M-B
100ns
100uA
600mil)
MX23C3204PC-10
MX23C3204PC-12
MX23C3204PC-15
100ns
120ns
|
