2305 transistor
Abstract: No abstract text available
Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
|
Original
|
BLF8G24LS-150V;
BLF8G24LS-150GV
BLF8G24LS-150V
8G24LS-150GV
2305 transistor
|
PDF
|
2395 transistor
Abstract: No abstract text available
Text: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
|
Original
|
BLF8G24LS-100V;
BLF8G24LS-100GV
BLF8G24LS-100V
24LS-100GV
2395 transistor
|
PDF
|
2395 transistor
Abstract: No abstract text available
Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 2 — 24 February 2014 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
|
Original
|
BLF8G24LS-150V;
BLF8G24LS-150GV
BLF8G24LS-150V
8G24LS-150GV
2395 transistor
|
PDF
|
transistor D 2395
Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395 D 2395 2395 transistor datasheet
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION
|
Original
|
CDD2395
O-220
25deg
100ms
C-120
transistor D 2395
CONTINENTAL DC-DC CONVERTER
transistor 2395
2395 transistor
transistor D 2395 a
CDD2395
D 2395
2395 transistor datasheet
|
PDF
|
transistor D 2395
Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter.
|
Original
|
CDD2395
O-220
25deg
100ms
C-120
transistor D 2395
CONTINENTAL DC-DC CONVERTER
transistor 2395
2395 transistor
transistor D 2395 a
CDD2395
|
PDF
|
MT 3205
Abstract: 908-185 DPS 185 clock chime circuit CF5762AB0 1786XT chime melody
Text: CF5762AB0 Analog Chime Clock CMOS IC OVERVIEW FEATURES • ■ ■ ■ ■ ■ ■ ina ry The CF5762AB0 is an analog chime clock CMOS IC that uses a 4.194304MHz crystal oscillator source. It can play a melody and hour chime when triggered by an hourly signal. It generates output sound using dual pitch
|
Original
|
CF5762AB0
CF5762AB0
194304MHz
NP0014AE
MT 3205
908-185
DPS 185
clock chime circuit
1786XT
chime melody
|
PDF
|
MRF8S23120HR3
Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT
Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to
|
Original
|
MRF8S23120H
MRF8S23120HR3
MRF8S23120HSR3
MRF8S23120HR3
AN1955
C3225JB2A334KT
j162
MRF8S23120H
C5750X7R1H106KT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to
|
Original
|
MRF8S23120H
MRF8S23120HR3
MRF8S23120HSR3
MRF8S23120HR3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
|
Original
|
SL-4524
SL-4524
SL-45241
SL-45242
SL-45242
SL45241
SL45242
EDS-100948
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
|
Original
|
SL-2524
SL-2524
SL-25241
SL-25242
SL-25241
SL25241
SL25242
EDS-100947
|
PDF
|
j142
Abstract: No abstract text available
Text: Advance Data Sheet Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
|
Original
|
SL-4524
SL-4524
SL-45241
SL-45242
j142
|
PDF
|
J205
Abstract: SL 2360 SL-25242 J380 transistor j380 J377 SL-25241 2524
Text: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
|
Original
|
SL-2524
SL-2524
SL-25242
SL-25241
J205
SL 2360
SL-25242
J380
transistor j380
J377
SL-25241
2524
|
PDF
|
J476
Abstract: SL-45241 SL-45242 J473 j469 45241
Text: Advance Data Sheet Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
|
Original
|
SL-4524
SL-4524
SL-45242
SL-45241
J476
SL-45241
SL-45242
J473
j469
45241
|
PDF
|
j377
Abstract: No abstract text available
Text: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
|
Original
|
SL-2524
SL-2524
SL-25241
SL-25242
SL-25242
j377
|
PDF
|
|
|
motorola 2395
Abstract: Motorola 2396 BTA13LT1 transistor D 2395 TRANSISTOR D 2398
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M BTA13LT1 M M B T A 1 4 L T 1* Darlington Amplifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit C o llecto r- Emitter Voltage
|
OCR Scan
|
BTA13LT1
OT-23
O-236AB)
MMBTA13LT1
MMBTA14LT1
motorola 2395
Motorola 2396
transistor D 2395
TRANSISTOR D 2398
|
PDF
|
2SK2540
Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )
|
OCR Scan
|
2SK2262
2SK2294
-220FN
2SK2792
2SK2459N
2SK2460N
0-220FN
2SK2713
2SK2793
2SK2540
2SD2576
2sd2396
TA143E
2SK2459N
2SD 92 M
C2N3904
2SB1569A
2SD2061
2SD1189F
|
PDF
|
VK200-19
Abstract: motorola 2395 JMC5601 NPN/TE 2395 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts
|
OCR Scan
|
MRF314
VK200-19
motorola 2395
JMC5601
NPN/TE 2395 motorola
|
PDF
|
transistor D 2395
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 M M BTA14LT1* Darlington A m plifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol
|
OCR Scan
|
MMBTA13LT1
BTA14LT1*
OT-23
O-236AB)
b3b7255
MMBTA13LT1
MMBTA14LT1
wmb3b72SS
transistor D 2395
|
PDF
|
D44VH7
Abstract: d44vh10
Text: D44VH Serles File Number 2350 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • Fast Switching ts < 700 ns resistive tf < 200 ns ■ Low VCE saf < 0.4V @ ;c = 8A TERMINAL DESIGNATIONS The D44VH series of silicon n-p-n power transistors are
|
OCR Scan
|
D44VH
D45VH
D44VH7
d44vh10
|
PDF
|
vk200* FERROXCUBE
Abstract: MRF571
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors . designed for low-noise, wide dynamic range front end amplifiers, low-noise V C O ’s, and microwave power multipliers. • Low Noise • High Gain fT = 8.0 GHZ @ 50 mA
|
OCR Scan
|
MRF571
VK-200,
56-590-65/3B
vk200* FERROXCUBE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HARRIS SEflICOND SECTOR 5bE J> • 43G2271 DG40fil4 Û4S H H A S D44VH Series F ile Number 2350 7 = 3 6 - 7 .3 Silicon N-P-N Transistors Complementary to the D45VH Series Features: ■Fast Switching ts < 700 ns resistive tf < 200 ns ■Low l^c£ saf ^ 0 .4 V @ lc = 8/4
|
OCR Scan
|
D44VH
43G2271
DG40fil4
D45VH
0G40filfi
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOT OROL A SC X S T RS /R F 15E 0 | b3t>7aS4 OGflblSQ S | M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage VcEO 25 Vdc Collector-Base Voltage VcBO 25 Vdc Collector Current — Continuous ic 600 mAdc Total Device Dissipation @ Ta = 25°C Derate above 25°C
|
OCR Scan
|
2N4402
|
PDF
|
TE 2395 motorola
Abstract: motorola te 2395 motorola 2395 te 2395 NPN/TE 2395 motorola NPN low voltage
Text: MSD1328-RT1* CASE 318D-03, STYLE 1 M A X IM U M R A T IN G S TA = 2 5 C S ym bol Value U nit C o lle cto r-B a se V oltage v (B R )C B O 25 V dc C o lle cto r-E m itte r Voltage v lB R )C E O 20 Vdc E m itter-B ase V oltage v E lB R jB O 12 V dc 'C 500 m A dc
|
OCR Scan
|
MSD1328-RT1*
318D-03,
SC-59
TE 2395 motorola
motorola te 2395
motorola 2395
te 2395
NPN/TE 2395 motorola
NPN low voltage
|
PDF
|
vno300m
Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
|
OCR Scan
|
100kQ
500MIh,
200MHz)
2SA103I5
vno300m
2SC2382
epa 2391
2SA103
THB 6 2411
175mhz 12.5v 40w
te 2395
138B
138D
2SA1028
|
PDF
|
