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    2395 TRANSISTOR Search Results

    2395 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    2395 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2305 transistor

    Abstract: No abstract text available
    Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.


    Original     		PDF BLF8G24LS-150V; BLF8G24LS-150GV BLF8G24LS-150V 8G24LS-150GV 2305 transistor

    2395 transistor

    Abstract: No abstract text available
    Text: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.


    Original     		PDF BLF8G24LS-100V; BLF8G24LS-100GV BLF8G24LS-100V 24LS-100GV 2395 transistor

    2395 transistor

    Abstract: No abstract text available
    Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 2 — 24 February 2014 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.


    Original     		PDF BLF8G24LS-150V; BLF8G24LS-150GV BLF8G24LS-150V 8G24LS-150GV 2395 transistor

    transistor D 2395

    Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395 D 2395 2395 transistor datasheet
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION


    Original     		PDF CDD2395 O-220 25deg 100ms C-120 transistor D 2395 CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395 D 2395 2395 transistor datasheet

    transistor D 2395

    Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter.


    Original     		PDF CDD2395 O-220 25deg 100ms C-120 transistor D 2395 CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395

    MT 3205

    Abstract: 908-185 DPS 185 clock chime circuit CF5762AB0 1786XT chime melody
    Text: CF5762AB0 Analog Chime Clock CMOS IC OVERVIEW FEATURES • ■ ■ ■ ■ ■ ■ ina ry The CF5762AB0 is an analog chime clock CMOS IC that uses a 4.194304MHz crystal oscillator source. It can play a melody and hour chime when triggered by an hourly signal. It generates output sound using dual pitch


    Original     		PDF CF5762AB0 CF5762AB0 194304MHz NP0014AE MT 3205 908-185 DPS 185 clock chime circuit 1786XT chime melody

    MRF8S23120HR3

    Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to


    Original     		PDF MRF8S23120H MRF8S23120HR3 MRF8S23120HSR3 MRF8S23120HR3 AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to


    Original     		PDF MRF8S23120H MRF8S23120HR3 MRF8S23120HSR3 MRF8S23120HR3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-4524 SL-4524 SL-45241 SL-45242 SL-45242 SL45241 SL45242 EDS-100948

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-2524 SL-2524 SL-25241 SL-25242 SL-25241 SL25241 SL25242 EDS-100947

    j142

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-4524 SL-4524 SL-45241 SL-45242 j142

    J205

    Abstract: SL 2360 SL-25242 J380 transistor j380 J377 SL-25241 2524
    Text: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-2524 SL-2524 SL-25242 SL-25241 J205 SL 2360 SL-25242 J380 transistor j380 J377 SL-25241 2524

    J476

    Abstract: SL-45241 SL-45242 J473 j469 45241
    Text: Advance Data Sheet Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-4524 SL-4524 SL-45242 SL-45241 J476 SL-45241 SL-45242 J473 j469 45241

    j377

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-2524 The SL-2524 is Stanford Microdevices’ high-linearity 25W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		PDF SL-2524 SL-2524 SL-25241 SL-25242 SL-25242 j377

    motorola 2395

    Abstract: Motorola 2396 BTA13LT1 transistor D 2395 TRANSISTOR D 2398
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M BTA13LT1 M M B T A 1 4 L T 1* Darlington Amplifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit C o llecto r- Emitter Voltage


    OCR Scan     		PDF BTA13LT1 OT-23 O-236AB) MMBTA13LT1 MMBTA14LT1 motorola 2395 Motorola 2396 transistor D 2395 TRANSISTOR D 2398

    2SK2540

    Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
    Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )


    OCR Scan     		PDF 2SK2262 2SK2294 -220FN 2SK2792 2SK2459N 2SK2460N 0-220FN 2SK2713 2SK2793 2SK2540 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F

    VK200-19

    Abstract: motorola 2395 JMC5601 NPN/TE 2395 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts


    OCR Scan     		PDF MRF314 VK200-19 motorola 2395 JMC5601 NPN/TE 2395 motorola

    transistor D 2395

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 M M BTA14LT1* Darlington A m plifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol


    OCR Scan     		PDF MMBTA13LT1 BTA14LT1* OT-23 O-236AB) b3b7255 MMBTA13LT1 MMBTA14LT1 wmb3b72SS transistor D 2395

    D44VH7

    Abstract: d44vh10
    Text: D44VH Serles File Number 2350 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • Fast Switching ts < 700 ns resistive tf < 200 ns ■ Low VCE saf < 0.4V @ ;c = 8A TERMINAL DESIGNATIONS The D44VH series of silicon n-p-n power transistors are


    OCR Scan     		PDF D44VH D45VH D44VH7 d44vh10

    vk200* FERROXCUBE

    Abstract: MRF571
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors . designed for low-noise, wide dynamic range front end amplifiers, low-noise V C O ’s, and microwave power multipliers. • Low Noise • High Gain fT = 8.0 GHZ @ 50 mA


    OCR Scan     		PDF MRF571 VK-200, 56-590-65/3B vk200* FERROXCUBE

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEflICOND SECTOR 5bE J> • 43G2271 DG40fil4 Û4S H H A S D44VH Series F ile Number 2350 7 = 3 6 - 7 .3 Silicon N-P-N Transistors Complementary to the D45VH Series Features: ■Fast Switching ts < 700 ns resistive tf < 200 ns ■Low l^c£ saf ^ 0 .4 V @ lc = 8/4


    OCR Scan     		PDF D44VH 43G2271 DG40fil4 D45VH 0G40filfi

    Untitled

    Abstract: No abstract text available
    Text: MOT OROL A SC X S T RS /R F 15E 0 | b3t>7aS4 OGflblSQ S | M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage VcEO 25 Vdc Collector-Base Voltage VcBO 25 Vdc Collector Current — Continuous ic 600 mAdc Total Device Dissipation @ Ta = 25°C Derate above 25°C


    OCR Scan     		PDF 2N4402

    TE 2395 motorola

    Abstract: motorola te 2395 motorola 2395 te 2395 NPN/TE 2395 motorola NPN low voltage
    Text: MSD1328-RT1* CASE 318D-03, STYLE 1 M A X IM U M R A T IN G S TA = 2 5 C S ym bol Value U nit C o lle cto r-B a se V oltage v (B R )C B O 25 V dc C o lle cto r-E m itte r Voltage v lB R )C E O 20 Vdc E m itter-B ase V oltage v E lB R jB O 12 V dc 'C 500 m A dc


    OCR Scan     		PDF MSD1328-RT1* 318D-03, SC-59 TE 2395 motorola motorola te 2395 motorola 2395 te 2395 NPN/TE 2395 motorola NPN low voltage

    vno300m

    Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 100kQ 500MIh, 200MHz) 2SA103I5 vno300m 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028