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    MRF8S23120HR3

    Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to


    Original     		MRF8S23120H MRF8S23120HR3 MRF8S23120HSR3 MRF8S23120HR3 AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT PDF

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    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to


    Original     		MRF8S23120H MRF8S23120HR3 MRF8S23120HSR3 MRF8S23120HR3 PDF