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    bc 357 transistor

    Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
    Text: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver


    OCR Scan     		PDF CB-76 bc 357 transistor transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC

    T74LS266B1

    Abstract: No abstract text available
    Text: S G S-THOMSON Ü 7 E D I 7^2^237 QDlti2Lil 5 J LOW POWER SCHOTTKY INTEGRATED CIRCUITS Ai - 67C16390 T54LS266 T74LS266 Ì T -tz -tS D QUAD 2-INPUT EXCLUSIVE NOR GATE DESCRIPTION The T54LS266/T74LS266 Is a high speed QUAD


    OCR Scan     		PDF T54LS266 T74LS266 T54LS266/T74LS266 67C16390 T74LS266 T74LS266B1

    STF8045AV

    Abstract: No abstract text available
    Text: 3DE D • 7^237 QG3D512 ô SGS-THOMSON STF8045AF STF8045AV S G S-THOMSON NPN DARLINGTON POWER MODULE EASY TO DRIVE TECHNOLOGY ETD ■ HIGH CURRENT POWER BIPOLAR . MODULE VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE (2500V RMS)


    OCR Scan     		PDF QG3D512 STF8045AF STF8045AV STF8045AV STF8045AF O-240) PC-029«

    Untitled

    Abstract: No abstract text available
    Text: • 7^ 5^237 ODB^m ? ^ ■ H " '3 3 ~ S _ SGS-THOMSON 2N6674 ML[lo @iOOi_2N6675 S G S-THOMSON 30E D NPN HIGH VOLTAGE POWER TRANSISTORS ■ ■ ■ ■ ■ SWITCHING REGULATORS INVERTERS SOLENOID AND RELAY DRIVERS MOTOR CONTROLS DEFLECTION CIRCUITS


    OCR Scan     		PDF 2N6674 2N6675 2N6674-2N6675

    TDA9102B

    Abstract: TDA9102C DIP20 pulse generator 30hz
    Text: 42E D 7*12^237 Q034Ö20 b IS6TH TDA9102B TDA9102C SGS-THOMSON m S 6 S-THOMSON • T - 77 -0 7 -0 5 HA/ PROCESSOR FOR TTL V.D.U PRELIMINARY DATA HORIZONTAL SECTION • SYNCHRONIZATION INPUT : TTL COM­ PATIBLE, NEGATIVE EDGE TRIGGERED' ■SYNCHRONIZATION INDEPENDENT FROM


    OCR Scan     		PDF TDA9102B 15kHz 100kHz FORTDA9102B TDA9102C 91DSTDA9102-01 TDA9102B 7cJ2cl237 T-77-07-05 TDA9102C DIP20 pulse generator 30hz

    Diode D7E

    Abstract: sef220 SEF221
    Text: 7^237 S G S-THOMSON D7E D 73C 17474 D 7^ 3 9 -/3 SEF220 SEF221 SEF222 SEF223 '•-i ?\ \\\ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.


    OCR Scan     		PDF SEF220 SEF221 SEF222 SEF223 00V/150 SEF223 Diode D7E

    STF6045DV

    Abstract: BD405 transistor b 1185 BD 149 transistor
    Text: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL


    OCR Scan     		PDF DG30SDb STF6045DF STF6045DV O-240) PC-029« STF6045DV BD405 transistor b 1185 BD 149 transistor

    BTW69-200N

    Abstract: scr 122 btw69200n 69200N LT 7237 SCR 1989
    Text: 3ÜE D • 7^237 00314G2 b 'T-zs-n SCS-THOMSON IMiOraOiDOi BTW69-200N -> 1200N s G S-THOMSON THYRISTORS ■ ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT EASY MOUNTING ON HEATSINK DESCRIPTION


    OCR Scan     		PDF 00314G2 BTW69-200N 1200N BTW69BTW scr 122 btw69200n 69200N LT 7237 SCR 1989

    BUF460AF

    Abstract: SC04840 BUF460AV ETD 41 035 pin diagram of ic 1496 JF460AF
    Text: 3DE D • 7=12^237 QQ3Q35b =1 ■ SGS-THOMSON s 6 s-thomson JF460AF ^ 7# OSOieiamiCTR »!« BUF460AV r - 3 3 '1 s NPN TRANSISTOR POWER MODULE . . . ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL


    OCR Scan     		PDF QQ3G35b JF460AF BUF460AV T-33-1S BUF460AF SC04840 T-91-20 O-240) ETD 41 035 pin diagram of ic 1496

    breakover device

    Abstract: THBT200D THBT SGS-Thomson thbt
    Text: 3GE D KB ? clEtì 237 ÜÜ35DS0 fi • Æ T SCS-TMOMSON ' T : ?Z-( s G S-THOMSON THBT 200 D TRISIL DESCRIPTIO N This protection device has been especially designed for subscriber line-card and terminal protection. By itself, it enables to protect integrated SLIC against


    OCR Scan     		PDF 35DS0 10/700nduction 7T5TE37 T-62-11 D89THBT200DP4 breakover device THBT200D THBT SGS-Thomson thbt

    Untitled

    Abstract: No abstract text available
    Text: m BOE D " T 7^ l'\S 7^2^237 QG3D'^S T • BFX89 BFY90 SGS-THOMSON tLiOTOOiOOS S-THOMSON WIDE BAND VHF/UHF AMPLIFIER a SILICON PLANAR EPITAXIAL TRANSISTORS ■ TO-72 METAL CASE ■ VERY LOW NOISE APPLICATIONS : ■ TELECOMMUNICATIONS ■ WIDE BAND UHF AMPLIFIER


    OCR Scan     		PDF BFX89 BFY90 BFY90 BFR99A. G-t33J BFX89-BFY9Q 0030Tifl T-31-15

    Untitled

    Abstract: No abstract text available
    Text: 3DE » • 7^237 □QBÜ'iaS S ■ T i• V°| / r : SCS-THOM SON ^_ 7# 5 C L l ^ g « S _ B C 3 9 4 S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon planar epitaxial NPN trans­


    OCR Scan     		PDF BC394 BC393. BC394 T-31-19

    Untitled

    Abstract: No abstract text available
    Text: 7^2^237 0045434 725 • SGTH SGS-THOMSON MK5027 SS7 SIGNALLING LINK CONTROLLER ■ CMOS ■ FULLY COMPATIBLE WITH BOTH 8 OR 16 BIT SYSTEMS ■ SYSTEM CLOCK RATE TO 10MHz ■ DATA RATE UP TO 2.5Mbps FOR SS7 PROTO­ COL PROCESSING , 7Mbps FOR TRANSPAR­ ENT HDLC MODE


    OCR Scan     		PDF MK5027 10MHz 48-PIN MK5025) MK5032) MK5027 600ns 100ns K5027

    200B

    Abstract: 400B 600B 700B 800B BTB24
    Text: 30E D • 7^237 DQ3175b ö SGS-THOMSON "T -Z S -1 7 BTB 24 B S G S-THOMSON TRIACS GLASS PASSIVATED CHIP Igt SPECIFIED IN FOUR QUADRANTS DESCRIPTIO N New range suited for applications such as phase control and static switching. ABSO LU TE RATINGS limiting values


    OCR Scan     		PDF DQ317Sb T-25-7 200B 400B 600B 700B 800B BTB24

    Untitled

    Abstract: No abstract text available
    Text: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.


    OCR Scan     		PDF 2N5875-2N5876 2N5877-2N5878 2N5877 2N5878 2N5875 2N5876 hFE-10 2N5875/6/7/8

    ST5420

    Abstract: ST5451 br b2d
    Text: • 7^2^237 0D4S212 2TT ■S6TH _ SGS-THOMSON ST5420 SID-iiW : S/T INTERFACE DEVICE WITH MICROWIRE/DSI ADVA N C E DATA As specified in I.430, full-duplex transmission at 192kb/s is provided on separate transmit and receive twisted wire pairs using inverted Alternate Mark In­


    OCR Scan     		PDF 0D4S212 ST5420 144KBIT/S ST5075 tiB8ST542B-B7 H88ST542B-BB 004523B ST5420 ST5451 br b2d

    Crystal Oscillator 12MHz

    Abstract: Z86E21 xtal 12MHz 12MHZ program for uart Xtal 8Mhz crystal
    Text: 7^2^237 rzT DG2bfl37 S SGS-THOMSON ^7# 5 _ Z86E21 S G S- T HOMSON 30E D 8K EPROM MICROCOMPUTERS • COMPLETE MICROCOMPUTER, 8K BYTES OF EPROM 240 BYTES OF RAM 32 I/O LINES, AND UP TO 56K BYTES ADDRESSABLE EX­ TERNAL SPACE EACH FOR PROGRAM AND


    OCR Scan     		PDF 0G2bfl37 Z86E21 256-BYTE 12MHz 12MHZ 40-PIN 44-LEAD 8192x Crystal Oscillator 12MHz Z86E21 xtal 12MHz program for uart Xtal 8Mhz crystal

    stk audio power amplifiers

    Abstract: D556 stk 013
    Text: ¿57 7=12^237 G G H b llG • S G T H _ SGS-THOMSON ¡OJOTO «! STK18N05 STK18N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RdS oii Id STK18N05 50 V < 0.085 a 18 A STK18N06 60 V < 0.085 £2 18 A ■ . ■ ■


    OCR Scan     		PDF STK18N05 STK18N06 STK1BN05 STK1BN06 STK18N05/STK18N06 stk audio power amplifiers D556 stk 013

    2N3964

    Abstract: 2N3963 2N3965 3964-2N 2N3962 3963-2N
    Text: 3GE D • 7^237 DÜ311TS S ■ _ f Z 7 SCS-THOM SON ^T # ¡ ^ V l > \ ~ \ ù[ 2N3962/2N3963 2N3964/2N3965 S G S-THOMSON LOW NOISE, LOW LEVEL AMPLIFIERS DESCRIPTION The 2N3962, 2N3963, 2N3964 and 2N3965 are si­ licon planar epitaxial PNP transistors in Jedec


    OCR Scan     		PDF 311TS 2N3962/2N3963 2N3964/2N3965 2N3962, 2N3963, 2N3964 2N3965 2N3962 2N3963 3964-2N 3963-2N

    UL02003

    Abstract: ulq2003 ULQ2001R ULQ2002R ULQ2003R ULQ2004R T432 72kn T-43-25
    Text: 7^2^237 D022472 M • ¡ " T ;ttV'L5> SGS-THOMSON ULQ2001R/2R _ ULQ2003R/4R S G S-THOMSON 3DE D SEVEN DARLINGTON ARRAYS ■ SEVEN DARLINGTONS PER PACKAGE ■ OUTPUT CURRENT 500 mA PER DRIVER 600 mA PEAK ■ OUTPUT VOLTAGE 50 V ■ INTEGRAL SUPPRESSION DIODES FOR IN­


    OCR Scan     		PDF D022472 ULQ2001R/2R ULQ2003R/4R ULQ2001R, ULQ2002R, ULQ2003R ULQ2004R ULQ2001R ULQ2001R-ULQ2002R-ULQ2003R-ULQ2004R T-43- UL02003 ulq2003 ULQ2001R ULQ2002R T432 72kn T-43-25

    tda7374

    Abstract: TDA 7374 V ap 7302 b transistor ap 7302 b
    Text: M2E 7=12^237 » Q03bb42 s SCS-THOMSON 7 BISÛTH G S - TH OM SO N TDA7374 ¡y ~ 7 # -0 S -0 \ DUAL BRIDGE AUDIO AMPLIFIER FOR CAR RADIO ' ; ADVANCE DATA • MINIMUM EXTERNAL COMPONENT COUNT ■ NO BOOTSTRAP CAPACITORS a NO BOUCHEROT CELLS ■ CLIP DETECTOR OUTPUT


    OCR Scan     		PDF Q03bb42 TDA7374 TDA7374 TDA7302 TDA7302 TDA 7374 V ap 7302 b transistor ap 7302 b

    Untitled

    Abstract: No abstract text available
    Text: 3QE D 7^237 0031101 3 T ' Z \ - \ 1 Gl SCS-THOMSON 2N930 me S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTIO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for use in high performance, low-level, low-noise am­


    OCR Scan     		PDF 2N930 2N930

    Untitled

    Abstract: No abstract text available
    Text: 7*^237 ¡üi DOMbSES SRñ • SGTH SCS-THOMSON STP55N05L STP55N05LFI ilL IO T «! N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP55N05L STP55N05LFI V dss R dS OTI Id 50 V 50 V < 0.023 n < 0.023 £2 55 A 30 A . TYPICAL RDS(on) = 0.02 Q.


    OCR Scan     		PDF STP55N05L STP55N05LFI O-220 ISOWATT220

    Untitled

    Abstract: No abstract text available
    Text: un 7^5^237 0020741 2 • SGS-THOMSON [»[H ] »gC T(g«S 13 BUV46/FI BUV46A/AFI S G S-TH0MS0N 3QE ]> HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUV46/A and BUV46FI/AFI are silicon multiepitaxial mesa NPN transistors in the jedecTO-220 plastic package and ISOWATT22C fully isolated


    OCR Scan     		PDF BUV46/FI BUV46A/AFI BUV46/A BUV46FI/AFI jedecTO-220 ISOWATT22C) BUV46 V46FI 300ns,