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    2316E Search Results

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    2316E Price and Stock

    RFM Integrated Device Inc SF2316E-3

    FILTER, SAW, 1583 MHZ, 6SMD
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    DigiKey SF2316E-3 Reel 10,000 1
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    SF2316E-3 Reel 10,000 1
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    SF2316E-3 Bag 9,900 1
    • 1 $1.85
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    RFM Integrated Device Inc SF2316E-1

    FILTER, SAW, 1582 MHZ, 6SMD
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    DigiKey SF2316E-1 Reel 3,970 1
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    SF2316E-1 Reel 3,970 1
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    SF2316E-1 Bag 3,970 1
    • 1 $1.88
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    Glenair Inc 390HS003N2316E6

    ADAPTER - Bulk (Alt: 390HS003N2316E6)
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    Glenair Inc 370HS003M2316E3

    ADAPTER - Bulk (Alt: 370HS003M2316E3)
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    Glenair Inc 390HS003M2316E6

    ADAPTER - Bulk (Alt: 390HS003M2316E6)
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    Find more 2316E price and stock on Findchips.com

    2316E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2316E Signetics Integrated Circuits Catalogue 1978/79 Scan PDF

    2316E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    SSF2316E

    Abstract: DFN3×3-8L 2316E "battery protection"
    Text: 2316E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic diagram ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired


    Original     		PDF SSF2316E Rating2000V 2316E 25unless SSF2316E DFN3×3-8L 2316E "battery protection"

    Mosfet

    Abstract: SSF2316E
    Text: 2316E 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic Diagram ESD Rating：2000V HBM ● High Power and current handing capability


    Original     		PDF SSF2316E 2316E 65BSC Mosfet SSF2316E

    Untitled

    Abstract: No abstract text available
    Text: 2316E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS ON < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V Schematic diagram ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired


    Original     		PDF GDSSF2316E 2316E SSF2316E 65BSC

    K4096

    Abstract: 1404a ITT 6570 MM2102 MM2112 intel 2101 MK4102 MK4007 MK1007 KS 2102
    Text: S ig n e tic s M em o rie s-M O S RAMs IN T E L 2101 2111 2112 2 1 0 2 /2 1 0 2 A 1103 2107B 2104 2115 2125 2 11 4 2 30 8 2316E 2 70 4 2708 1402A 1403A 1404A 1405A M O STEK M K4007 M K4102 M K4096 M K4027 M K30000 M K 34000 M K3708 M K1007 M OTOROLA 2 102/A


    OCR Scan     		PDF 2102/2102A 2107B 2316E MK4007 MK4102 K4096 MK4027 MK3708 K1007 1404a ITT 6570 MM2102 MM2112 intel 2101 MK1007 KS 2102

    Z80A CPU

    Abstract: Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram
    Text: MOS INTEGRATED CIRCUITS continued POWER TEMP. RANGE (°C) RAM 1024x1 bit static 2 5 - 0.25 2.2 2.2 33 - 0-70 D IP K, M M 2316E •ROM 2Kx8 bit 2 5 - 0.45 2.2 2.2 40 - 0-70 DIP R, U M 2704 PROM 512x8 bit 5 5 12 0.45 2.2 2.2 - - 0-70 D IP J M 2708 PROM 1Kx8 bit


    OCR Scan     		PDF 1024x1 2316E 512x8 4096x1 Z80/Z80A Z80A CPU Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram

    MM52116

    Abstract: 2316E 2716 PROM prom 2708
    Text: MM52116 2316E National J ji Semiconductor MOS ROMs MM52116 (2316E) 16,384-Bit Read Only Memory General Description Features The M M 52116 is a static MOS 1 6,3 84 -b it read-only m em ory organized in an 2048-w ord-by*8-bit fo rm a t. I t is fabricated using N-channel enhancem ent and


    OCR Scan     		PDF MM52116 2316E) MM52116 384-Bit 2048-w 2316E 2716 PROM prom 2708

    am9218

    Abstract: 2316a intel 2316a rom 2316a
    Text: AMI S6831A/B Features General Description □ Single +5V Power Supply □ Directly TTL Compatible Inputs □ Three-State T T L Compatible Outputs □ Three Programmable Enables The AMI 6831 family of 16,384 bit mask program­ mable Read-Only-Memories offers fully static opera­


    OCR Scan     		PDF S6831A/B 2048x8) 450ns S6831A: S6831B: S6831 am9218 2316a intel 2316a rom 2316a

    74s288

    Abstract: SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349
    Text: S ig n e tic s Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A


    OCR Scan     		PDF 82S16 2701/27LS01 82S17 27S08/27LS0Ã 82S23 27S09/27LS09 82S123 27S10 82S126 27S11 74s288 SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349

    mcm6830

    Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
    Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories


    OCR Scan     		PDF MS800MM0S MC3870 MC14S00B, MC141000/1206 M2900 M10800 M6800 MC14500B, MC141000/1200 mcm6830 EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2

    la 76805 volt on pin

    Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
    Text: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4


    OCR Scan     		PDF MCS-4/40â MCS-48â MCS-80/85â -883B la 76805 volt on pin intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall

    NEC D2716

    Abstract: D2716 PD8048 PD2716 nec d2716 eprom uPD2716-2 NPD2 PD42S18160 iPD2716 ud271
    Text: NEC f*PD2716 v' J1PD2716-2 NEC Electronics U.S.A. Inc. Microcomputer Division 16,384 2K X 8 BIT UV ERASABLE PROM D ESC RIP T IO N The /j P D 2 71 6 is a 16,384 bit (2048 x 8 bit) Ultraviolet Erasable and Electrically Pro­ grammable Read-Only Mem ory (E P R O M ). It operates from a single +5 volt supply,


    OCR Scan     		PDF uPD2716 uPD2716-2 PD2316E LM27S2S //PD42S18160, NEC D2716 D2716 PD8048 PD2716 nec d2716 eprom NPD2 PD42S18160 iPD2716 ud271

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


    OCR Scan     		PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    MOSTEK 36000

    Abstract: 3861 mostek MK2408P MK2500P
    Text: CONTENTS I. Functional/Numerical Index II. Shift Registers III. Read Only Memories 16K ROMs 32K ROMs 64K ROMs Programmable ROMs Random Access Memories 4K Dynamic RAMs 16K Dynamic RAMs 4K Static RAMs IV. V. Application Information VI. Packaging VII. Reliability Information


    OCR Scan     		PDF 1002P 1007P 1007N MOSTEK 36000 3861 mostek MK2408P MK2500P

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


    OCR Scan     		PDF

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    K4096

    Abstract: Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"
    Text: S ig n e tic s Memories MOS RAMs AM D A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 0 2 /9 1 0 2 AM 9060 AM 9216 AM 9208 A M 1402 A M 1403 A M 1404 A M 1405 A M 1506 A M 1507 A M 2806 A M 280 7 AM 2808 AM 2809 AM 2833 MOS M E M O R Y CROSS R E FER EN C E


    OCR Scan     		PDF AM2101/9101 AM2111/9111 AM2112/9112 AM2102/9102 AM9060 AM9216 AM9208 AM1402 AM2807 AM2808 K4096 Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"

    Intel 2316E

    Abstract: CPD1802 2316E MK34000 Z80A rom/Intel 2316E Z80A sti IM6316 IM6316IJG IM6316IPG
    Text: IM 6 3 1 6 1 6 ,3 8 4 Bit 2 0 4 8 x 8 CMOS ROM DM Ü^DIL common system bus structures. On-chip address registers and tw o mask programmable chip-selects sim p lify system interfacing requirements. FEATURES • Low standby power 11 mW maximum • High speed: 550ns maximum


    OCR Scan     		PDF IM6316 2048x8) 550ns 2316E MK34000 384-bit IM6316 CPD1802 CPD18CI2 Intel 2316E CPD1802 Z80A rom/Intel 2316E Z80A sti IM6316IJG IM6316IPG

    Intel 2316

    Abstract: intel 2708 eprom 2716 eprom 2316a 2316a intel S6831 eprom 2716 8316 rOM rom 2716 2316a rom
    Text: AM I S6831A/B Features G eneral Description □ Single + 5 V Pow er Supply □ D irectly TTL C om patible Inputs □ T hree-State TTL C om patible O utputs □ Three Program mable Enables The AMI 6 8 3 1 fam ily o f 1 6 ,3 8 4 bit m ask program ­ m able Read-O nly-M em ories o ffers fu lly static opera­


    OCR Scan     		PDF S6831A/B 2048x8) S6831 S6813A, S6813B, 9E9F10320F0493139F72000F5E0F0 Intel 2316 intel 2708 eprom 2716 eprom 2316a 2316a intel eprom 2716 8316 rOM rom 2716 2316a rom

    Intel mcs-40

    Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
    Text: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough


    OCR Scan     		PDF S-10380 CH-8021 /C-160/0577/50K Intel mcs-40 intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40

    pd2716

    Abstract: MPD2716 2716D PD8048 mPD446 PD42S18160 iPD2716 UPD2316E ud271
    Text: NEC NEC Electronics U.S.A. Inc. f*P D 2 7 1 6 v' J 1 P D 2 7 1 6 -2 Microcomputer Division 1 6 ,3 8 4 D E S C R IP T IO N 2 K X 8 B IT U V E R A S A B L E P R O M The ¿¿P D 2716 is a 16,384 bit (2048 x 8 bit) Ultravioiet Erasable and Electrically Pro­


    OCR Scan     		PDF MPD2716 PD2716 /jPD2716 PD2316E fiPD2716 LM27S2S /PD42S18160, 0Cm575 2716D PD8048 mPD446 PD42S18160 iPD2716 UPD2316E ud271

    AOOA

    Abstract: 2316E MM52116
    Text: Character Generators MM52116FDW, MM52116FDX Character Generators General Description Features The M M 52116FD W , M M 5 21 1 6 F D X are 128-character, N-channel, silicon-gate character generators designed pri­ marily fo rC R T display applications. The M M 5 21 1 6 F D W /


    OCR Scan     		PDF MM52116FDW, MM52116FDX 52116FD 128-character, MM52116FDX 128-character 2316E AOOA MM52116

    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.


    OCR Scan     		PDF

    MM2316E

    Abstract: MM2716 MM52116FDW-D D24C MM52116FDW-N MM52116FDX-D MM52116FDX-N MM52116 can obd tac l2
    Text: General Description Features The M M 52116FD W , M M 5 21 1 6 F D X are 128-character, N-channel, silicon-gate character generators designed p ri­ m a rily fo r CRT display applications. The M M 5 21 1 6 F D W / M M 5 21 1 6 F D X provide 5x7 and 7 x 9 row scan character


    OCR Scan     		PDF MM52116FDW, MM52116FDX 128-character, MM52116FDW/ 128-character MM2316E MM2716 MM52116FDW-D D24C MM52116FDW-N MM52116FDX-D MM52116FDX-N MM52116 can obd tac l2