2305 TRANSISTOR Search Results

2305 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

2305 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PRODUCT SUMMARY SKY77778-51 Power Amplifier Module for LTE FDD Band 7 2500–2570 MHz , Band 30 (2305–2315 MHz); LTE TDD Bands 38/41 (2496–2690 MHz), Band 40 (2300–2400 MHz); AXGP Band (2545–2575 MHz) Applications Description • Long-Term Evolution (LTE)	Original	SKY77778-51 10-pad	PDF
2N3904 Abstract: 2N3906 MAX6654 MAX6680 MAX6680MEE MAX6681 MAX6681MEE Text: 19-2305; Rev 0; 4/02 ±1°C Fail-Safe Remote/Local Temperature Sensors with SMBus Interface The MAX6680/MAX6681 include pin-programmable default temperature thresholds for the OVERT output, which provides fail-safe clock throttling or system shutdown. In addition, the devices are pin programmable to	Original	MAX6680/MAX6681 MAX6680/MAX6681 2N3904 2N3906 MAX6654 MAX6680 MAX6680MEE MAX6681 MAX6681MEE	PDF
sky77814 Abstract: No abstract text available Text: PRODUCT SUMMARY SKY77814-11 Power Amplifier Module for LTE FDD Band 7 2500–2570 MHz and Band 30 (2305–2315 MHz) and LTE TDD Bands 38/41 (2496–2690 MHz), Band 40 (2300–2400 MHz) and AXGP Band (2545–2575 MHz) Applications Description • Long-Term Evolution (LTE)	Original	SKY77814-11 24-pad sky77814	PDF
BU2305 Abstract: BU2305F bu2302 Text: Standard iCs CR timer BU2302/BU2302F/BU2305/BU2305F The B U 2302/F and B U 2305/F are general-purpose ICs used in timers. The tim er off tim e is based on the oscillation frequency that is determ ined by the external CR connected to the internal oscillator circuit.	OCR Scan	BU2302/BU2302F/BU2305/BU2305F BU2302/F BU2305/F 2305/F U2302/B U2302F/B U2305/BU2305F BU2305 BU2305F bu2302	PDF
MAX6681 Abstract: MAX6681MEE 2N3904 2N3906 MAX6654 MAX6680 MAX6680MEE Text: 19-2305; Rev 1; 1/05 ±1°C Fail-Safe Remote/Local Temperature Sensors with SMBus Interface The MAX6680/MAX6681 are precise, two-channel digital thermometers. Each accurately measures the temperature of its own die and one remote PN junction and reports the temperature on a 2-wire serial interface. The	Original	MAX6680/MAX6681 2N3904 2N3906. MAX6680/MAX6681 MAX6681 MAX6681MEE 2N3906 MAX6654 MAX6680 MAX6680MEE	PDF
Untitled Abstract: No abstract text available Text: 19-2305; Rev 1; 1/05 ±1°C Fail-Safe Remote/Local Temperature Sensors with SMBus Interface The MAX6680/MAX6681 are precise, two-channel digital thermometers. Each accurately measures the temperature of its own die and one remote PN junction and reports the temperature on a 2-wire serial interface. The	Original	MAX6680/MAX6681 2N3904 2N3906. MAX6680/MAX6681	PDF
5082-2815 Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805 Text: ^5ñ d ÉT\| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -7 1N5711 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*	OCR Scan	1N5711* 1N5712* HSCH-1001 1N6263I* 1N5711, 1N5712, 1N5711 1N5711) 5082-2815 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805	PDF
2395 transistor Abstract: No abstract text available Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 2 — 24 February 2014 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.	Original	BLF8G24LS-150V; BLF8G24LS-150GV BLF8G24LS-150V 8G24LS-150GV 2395 transistor	PDF
2395 transistor Abstract: No abstract text available Text: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.	Original	BLF8G24LS-100V; BLF8G24LS-100GV BLF8G24LS-100V 24LS-100GV 2395 transistor	PDF
2305 transistor Abstract: No abstract text available Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.	Original	BLF8G24LS-150V; BLF8G24LS-150GV BLF8G24LS-150V 8G24LS-150GV 2305 transistor	PDF
stk4192 Abstract: STK4192 2 STK4192II stk4192-ii 50W power amplifier STK4101II STK4101V EN2305C power transformer ratings resistor fix value Text: Ordering number: EN2305C Thick Film Hybrid IC STK4192II AF Power Amplifier Split Power Supply (50W + 50W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.	Original	EN2305C STK4192II STK4102II STK4192II) STK4101V STK4101II STK4192II] stk4192 STK4192 2 STK4192II stk4192-ii 50W power amplifier STK4101V EN2305C power transformer ratings resistor fix value	PDF
STK4192II Abstract: STK4101 stk4192 STK4192 2 transistor ac 149 10w power STK4192-II EN2305C Text: Ordering number: EN2305C Thick Film Hybrid IC STK4192II AF Power Amplifier Split Power Supply (50W + 50W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.	Original	EN2305C STK4192II STK4102II STK4192II) STK4101V STK4101II STK4192II] STK4192II STK4101 stk4192 STK4192 2 transistor ac 149 10w power STK4192-II EN2305C	PDF
1N5497 Abstract: SDT3775 SDT3714 SDT3715 SDT3716 SDT3717 SDT3718 SDT3719 SDT3720 SDT3721 Text: 29 SILICON POWER TRANSISTORS CUF! R EfsIT GAIN SATURATIOP si V O LTA G ES @ TYPE NUMBER CASE TYPE VCBO V 5 AMP SILICON PNP VCEO V EBO I V I V O b se rve - 80 80 40 40 40 40 hFE MIN. I MAX. M egative P o la r ity 6.0 20 6.0 20 6.0 12 SDT3714 SDT3715 SDT3716	OCR Scan	SDT3775 SDT3776 SDT3777 SDT3778 2N1487 2N1488 2N1489 2N1490 2N2305 2N5490 1N5497 SDT3775 SDT3714 SDT3715 SDT3716 SDT3717 SDT3718 SDT3719 SDT3720 SDT3721	PDF
TIC 2460 Abstract: bts 2140 S11 zener diode ALM-31222 tic 2160 tic 2360 Avago MGA-30216 app note 2305 transistor BTS 3900 a BTS 3900 Text: ALM-31222 1Watt, 1.7GHz to 2.7GHz Driver Amplifier Design for Base Transceiver Station Application Application Note 5388 Introduction Avago Technologies ALM-31222 is a high linearity 1W Power Amplifier PA with good OIP3 and PAE at 1dB GainCompression point, are designed to operate from 1.7GHz	Original	ALM-31222 ALM-31222 47dBm, 31dBm, ALM-31222, 350LFM AV02-1274EN TIC 2460 bts 2140 S11 zener diode tic 2160 tic 2360 Avago MGA-30216 app note 2305 transistor BTS 3900 a BTS 3900	PDF

56590653B Abstract: AN 240 Motorola 2305 transistor MRF316 Motorola MRF316 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF316 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 W atts	OCR Scan	MRF316 56-590-65-3B VK200-19/4B MRF316 56590653B AN 240 Motorola 2305 transistor Motorola MRF316	PDF
NTE2314 Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo	OCR Scan	NTE397) NTE396) NTE375) T0220 T0218 NTE2314) NTE2306) NTE2314 NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ	PDF
Untitled Abstract: No abstract text available Text: File Number 1353 BU X11A 3 5 - / 9 - HARRIS S Efl I COND SECTOR £fc,E J> 4302271 High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor 004D725 747 « H A S TERMINAL DESIGNATIONS Features: V c e o - 190 V m ie -2 0 A • ■ Pr - 200 W JEDEC TO-204AA	OCR Scan	004D725 O-204AA RCA-BUX11A T0-204AA BUX11A	PDF
transistor tl 188 Abstract: 92CS-27516 Text: BUX11A High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor TERMINAL DESIGNATIONS c £ Features: • I / c eo 1353 File N um ber FLANGE _ -190 V 92CS-27516 m l c - 20 A ■ Pt - 200 W JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor	OCR Scan	BUX11A 92CS-27516 O-204AA RCA-BUX11A O-204AA 92CS-3227I transistor tl 188 92CS-27516	PDF
MRF8S23120HR3 Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to	Original	MRF8S23120H MRF8S23120HR3 MRF8S23120HSR3 MRF8S23120HR3 AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to	Original	MRF8S23120H MRF8S23120HR3 MRF8S23120HSR3 MRF8S23120HR3	PDF
PIMD3 Abstract: npT1007 TRANSISTOR J15 Text: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature	Original	NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 PIMD3 npT1007 TRANSISTOR J15	PDF
TRANSISTOR J15 Abstract: PIMD3 Text: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature	Original	NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 TRANSISTOR J15 PIMD3	PDF
Untitled Abstract: No abstract text available Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz	Original	NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006	PDF
transistor c 2316 Abstract: IC KA 2312 transistor t8w tm 2312 2SA1022 2SA1030 2SC2292 T10M40F1 T8M40F1 te 2304 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	Tc-25 Tr-25-Cl 250MHz Te-25 rr-25 transistor c 2316 IC KA 2312 transistor t8w tm 2312 2SA1022 2SA1030 2SC2292 T10M40F1 T8M40F1 te 2304	PDF

2305 TRANSISTOR Search Results

2305 TRANSISTOR Result Highlights (5)

2305 TRANSISTOR Datasheets Context Search

Untitled

2N3904

sky77814

BU2305

MAX6681

Untitled

5082-2815

2395 transistor

2395 transistor

2305 transistor

stk4192

STK4192II

1N5497

TIC 2460

56590653B

NTE2314

Untitled

transistor tl 188

MRF8S23120HR3

Untitled

PIMD3

TRANSISTOR J15

Untitled

transistor c 2316